Catalogue Photonic Solutions Ltd

Transcription

1 Catalogue Photonic Solutions Ltd Unit., Quantum Court, Research Avenue South, HU Research Park, Edinburgh, EH AP, UK, Tel: + (0) sales@photonicsolutions.co.uk eb

2 TABLE F CNTENTS s... Glossary of Terms... General Definitions... Detector Parameters... Preamplifier Parameters... Application Notes... Thermoelectric Cooling... Thermoelectric Cooler Controllers... NCP0ME0RL Thermistor Characteristic... 7 ptical Immersion... Preamplifiers for IR Detectors... IR Detectors Packages... 0 IR indows... 0 Applications... 0 Custom Engineering / Design... Precautions for Use... rder Code... Infrared Detectors... Photoconductors... 7 Photoelectromagnetic Detectors... Photovoltaic Detectors... Infrared Detectors Accessories... Preamplifiers... TEC Controllers... 7 Preamplifier Power Supplies... 0 Cables... AC Adaptors... 7 Mechanical Accessories... 7 arranty... Contact and Distributors... Appendix...

3 SYMBLS A detector active area tr rise time Cd detector capacitance tup power-on to LCK indicator time D* normalized detectivity w width of the detector en preamplifier input noise voltage density Vn noise voltage fo noise measurement frequency Vout output voltage swing fhi high cut-off frequency Voff output voltage offset flo low cut-off frequency Vsup power supply voltage I current VTEC maximum TEC output voltage Ib bias current Zd detector impedance Idark dark current λpeak peak wavelength [μm] Iin total input noise current λopt optimal wavelength [μm] In noise current λcut-on cut-on wavelength [μm] in noise current density λcut-off cut-off wavelength [μm] Isup power supply current τ time constant [ns] ITEC maximum TEC output current I' current flowing through detector resistance IR infrared: MIR Mid-avelength Infrared: - µm LIR Long-avelength Infrared: - µm k Boltzmann's constant:.0 0- J/K Ki transimpedance PC photoconductor PCI photoconductor optically immersed PCQ quadrant photoconductor PEM photoelectromagnetic detector PV photovoltaic detector PVI photovoltaic optically immersed detector PVM photovoltaic multiple junction detector PVMI photovoltaic multiple junction detector optically immersed PVMQ quadrant photovoltaic multiple junction detector R detector resistance Ri current responsivity RL load resistance Rout output impedance Rs series resistance Rsq sheet resistance Rv voltage responsivity Ta ambient temperature

4 GLSSARY F TERMS General Definitions Hg-xCdxTe Detector Formats Known also as Mercury Cadmium Telluride (MCT), CdHgTe, (Cd,Hg)Te or MerCadTel; an alloy of CdTe and HgTe. Change of the CdTe to HgTe ratio (composition or x-value) can be used to tune optical absorption cut-off wavelength in the wide range from ultraviolet (UV) to deep infrared (IR). Cooling shifts the cut-off wavelength towards long wavelengths. Detectors from VIG System are based on complex graded gap MCT structures optimized for MIR (- µm) and LIR (- µm) ranges. Square and rectangular formats are used for PC, PV, PVM and PEM detectors. Circular shapes for some PV detectors are available upon request. Photovoltaic Detectors (PV, PVM) Photovoltaic Detectors (photodiodes) are semiconductor structures with one (PV) or multiple (PVM) homo- or heterojunctions. Absorbed photons produce electron-hole pairs, resulting in external photocurrent. Reverse bias voltage may be applied to increase differential resistance, reduce the shot noise, improve high frequency performance and dynamic range. Reverse bias may increase responsivity in some devices. Unfortunately, at the expense of flicker noise (/f) in most cases. Photovoltaic detectors are more vulnerable to electrostatic discharges than Photoconductors. Photoelectromagnetic Detectors (PEM) Photovoltaic Detectors based on the Photoelectromagnetic Effect. It consists in spatial separation of optically generated electrons and holes in the magnetic field. They do not require electrical bias and show no flicker noise (/f). The PEM devices are typically used as fast, uncooled detectors of the long wavelength radiation. Photoconductors (PC) Photoconductive Detectors based on the Photoconductive Effect. Infrared radiation generates charge carriers in the semiconductor active region decreasing its resistance. The resistance change is sensed as a voltage change by applying a constant current bias. The optimum bias current is specified in the Final Test Report and depends on the detector size, operating temperature and spectral characteristics Detector Parameters Current and Voltage Responsivity: Ri, Rv [ ] Current Signal (λ ) d λ Ri ( λ )= Incident Power( λ) d λ A Current responsivity is typically used for description of PV and PVM detectors. VoltageSignal(λ ) d λ V R i ( λ )= Incident Power( λ) d λ [ ] Voltage responsivity is typically used for description of PC and PEM detectors. Responsivity-idth Product: Ri w, Rv w The responsivity of PC, PEM and PVM devices is inversely proportional to the width w of the detector. Therefore, the normalized responsivity can be expressed as the current responsivity-width product (Ri w) for PVM or voltage responsivity-width product (Rv w) for PC and PEM. Dark Current: Idark The current that flows in a photodetector when it is not receiving any light. It may increase as the temperature rises. The small amount of current that flows through a photonic semiconductor device when it is not operating. Also known as Leakage Current. Corner Frequency: /f Flicker noise or /f noise is a frequency dependent noise. Its power is proportional to where b ~. b f Below the corner frequency the noise of detectors is dominated by flicker noise. Normalized Detectivity: D* The Signal-to-Noise Ratio (SNR) at a detector output normalized to radiant power, a cm detector optical area and a Hz bandwidth. The higher the D* value, the better the detector. R R cm Hz D *= i A= v A in vn [ ] ptical Area: A Active Area (Active Element) - the area from which the incident radiant power is collected. For immersed detector it is different from physical detector area (see ptical Immersion chapter). Detector Capacitance: Cd Parallel capacitance in the detector structure. Spectral Response Maximum Bias Current: Imax The maximum current that can flow through a Photoconductive or Photovoltaic detector without a risk of its damage. Bias Current-idth Ratio: Ib/w idth-normalized photoconductor bias current. Typical Photoconductor's (PC series) bias current Ib should be increased proportionally to it's width w. Therefore, the normalized bias current can be expressed as the Ib/w. Spectral Responsivity or Spectral Detectivity in detector data sheets it is presented as Rv(λ), Ri(λ) or D*(λ). It can be characterized by cut-on, cut-off, optimum and peak wavelength. Peak avelength: λpeak λpeak is a wavelength of detector maximum responsivity. ptimum avelength: λopt Noise Current and Noise Voltage: In, Vn The wavelength a device is optimized for. Typically longer than λpeak. Root mean square Noise Current or Noise Voltage. In = In (t ) V n= U n (t ) Cut-n avelength: λcut-on Noise Current and Noise Voltage Density: in, vn in = In Δ f v n= Vn Δ f λcut-on is the shortest wavelength at which a detector responsivity reaches 0% of the peak value. Cut-ff avelength: λcut-off λcut-off is the longest wavelength at which a detector responsivity reaches 0% of the peak value.

5 Glossary of Terms Resistance ptical Area Product: R A perating Temperature: T Area-normalized detector resistance. Typical photodiodes (PV) resistance decreases proportionally to their area increasing. Therefore, the normalized resistance can be expressed as the R A. In contrast, the PVM detectors are characterized by Sheet Resistance. Detector active element temperature. Series Resistance: Rs Parasitic resistance in photodiodes. Its contribution to the total diode resistance may be significant for long wavelength and near room perating Temperatures diodes, especially with large ptical Area. Sheet Resistance: Rsq The normalized resistance expressed in Ω/. It is used to normalize the resistance for different size devices with non-square active area R w Rsq= l Time Constant: τ Typically, detector time response can be described by one pole filter. Time Constant is the time it takes detector to reach /e 7% of the initial signal value. Time Constant is related to the db High Cut-ff Frequency fhi: τ= ( π f hi ) Acceptance Angle: Φ Acceptance angle is the maximum angle at which incoming radiation can be captured by a detector. Radiation coming from a larger cone angle won't reach the detector. Field of View: FV VIG defines the Field of View as the angle (FV), which is two times the half angle defined by: the center of the detector and detector housing - in flat or equipped with hemispherical lens detectors, and the marginal ray in detectors with intermediate or hyperhemispherical (standard) lens. In systems without external objectives Acceptance Angle and FV are identical. F-number: F/# F/# is related to the image-space acceptance angle when the system is focused at infinity. Time Constant is related to 0 0% Rise Time tr: t r=. τ Preamplifier Parameters utput Voltage Responsivity: RV Preamplifier Input Noise Current: in The output voltage divided by optical power incident on the detector. Noise current generated by equivalent current source in parallel with ideal preamplifier input. utput Voltage Swing: Vout The maximum and minimum voltages where preamplifier works in linear range. GND Point of zero potential. For standard preamplifiers is common power supply and signal ground. Low Cut-ff Frequency: flo A minimum frequency at which a module responsivity (or preamplifier gain) reaches -db of the peak value. A maximum frequency at which a module responsivity (or preamplifier gain) reaches -db of the peak value. Noise voltage at preamplifier output. Average utput Noise Density: f Total Input Noise Current: Iin Parameter taking into consideration all noise sources related to the input. V Iin= (ipa +i d )= n0 Tr Equivalent impedance exhibited by its output terminals. Load Resistance: RL ptimal resistance of the load: amplifier's or the measurement device's. utput Noise V n= Noise voltage generated by equivalent voltage source in series with ideal preamplifier input. utput Impedance: Rout High Cut-ff Frequency: fhi f Preamplifier Input Noise Voltage: en utput Voltage ffset: Voff DC component of the output voltage. V out (f )df f f Noise Measurement Frequency: f0 Frequency at which output voltage noise is measured selectively. utput Noise Density at Specific Frequency: Vn(f0) Power Supply Voltage: Vsup Supply voltage required for correct preamplifier operation. ±0% tolerance is allowed. Power Supply Current: Isup Supply current consumption during correct preamplifier operation. Noise voltage density measured at a given frequency. Coupling Type Transimpedance: Ki Preamplifier coupling type. It may be AC for alternate current or DC for direct current. Current to voltage conversion factor (ratio). V Ki = out Iin Power Supply Input (+) and (-) Polarity of the power supply related to the ground. Swapping supply connectors may lead to module damage.

6 APPLICATIN NTES ThermoElectric Cooling (TEC) Detector cooling reduces noise, increases responsivity and, in some devices, improves high frequency response. Two-, three- and four-stage TE coolers are available. TEC is biased with DC power. All specifications are given for 00 K heat sink temperature. TEC are characterized by: Maximum Temperature Difference: ΔTmax ΔTmax rated at Q=0, at other Q the ΔT should be estimated as ΔT=ΔTmax(-Q/Qmax). ptimum Current: Iopt Supply current giving the highest temperature difference (ΔT max) at the specified conditions stated in Detector Final Test Report. Heat Sinking Suitable heat sinking is necessary to dissipate heat generated by the Peltier cooler or excessive optical irradiation. Since heat is almost 00% dissipated at the base of the detector housing, it must be firmly attached to the heat sink (Figures a and b). Heat sinking via the mounting screw or via the detector housing cylindrical walls is not sufficient (Figures c and d). A thin layer of heat conductive epoxy or silicone grease should be applied to improve thermal contact between detector housing and heat sink. A heat sink thermal resistance of ~ K/ is typically required for the most two- and three-stage Peltier coolers. Four-stage cooler requires ~ K/. YES YES Maximum TEC Voltage: Vmax Voltage drop at ΔTmax. Maximum Heat Pumping Capacity: Qmax Qmax rated at ΔT=0, at other ΔT cooling capacity should be estimated as Q=Q max(-δt/δtmax) Standard TEC Parameters Parameter Tdet Vmax Imax Qmax ΔTmax Unit K V A K TE ~ TE ~ TE ~ Temperature Sensor The built-in thermistor serves as a sensor of the detector operation temperature. TE-cooled detectors are equipped with thermistor type NCP0ME0RL as a standard. a N c b N d Figures. Heat dissipation from TE-cooled detector ThermoElectric Cooler Controllers (TECC) VIG System offers the standard TEC controller STCC-0, the miniature TEC controller MTCC-0 and programmable smart TEC controllers PTCC-0 (available options: EM, Basic and Advanced). Temperature Sensor Inputs utput Current of the Built-In Power Supply Maximum current that can be delivered by power supply to the preamplifier, usually +/-00 ma. Series Resistance of the Connecting Cable Temperature sensor pins might be connected with any polarity. Material parameter - resistance of the supply cable. It depends on cable length. TEC Supply Input (+) and (-) Settling Time of the Set Detector Temperature Supply polarity for the TEC. Those pins are floating, which means they are not connected to the GND. Maximum TEC Controller utput Current: ITEC Maximum current that is provided by the controller to the TEC. The time taken by the cooling system to reach appropriate temperature of the detector. Maximum Voltage Across TEC Element Maximum voltage for TEC supplying. Maximum TEC Controller utput Voltage: VTEC Maximum voltage that is provided by the controller to the TEC. Ripple of utput Current It is a small unwanted residual periodic variation of the DC (direct current) output of a power supply (or other device) which has been derived from an AC (alternating current) source. This ripple is due to incomplete suppression of the rectified DC waveform within the power supply.

7 Application Notes NCP0ME0RL Thermistor Characteristic The electricity applied to between terminals of thermistors should be under the maximum power dissipation at C (00 m) not to destroy the thermosensor. For the measurement of resistance, the power should not exceed m. The relation between the resistance and the temperature: T T R T =R T0 exp (β 0 ) T T Rm in [k Ω] Rnom [k Ω] Rm ax [kω] - 7,,,7-0, 0,0,0-7,7,0, -,, 7, 0 -,0 0,,7 Rmin, khm -,,7 0, Rnom, khm - 7,, 0, Rmax, khm -7 70,7 7,7 0, -,0 7,0 7,7 0 -, 0,,0-0,,7 7, -,,0,0-7 0,7,, -,,7 0,77 0 -,,,7 -, 0,7, -, 7,, -7,,, -,,0, 0 -,0 0,0, - 7,,0, -,, 7,07-7,,, -,,,7 0 -,,, - 0, 0,, -,, 0, -7,,, - 7,7,0, 70-7,07 7,7 7, 7 -,,7 7,00 7,,, 7,,0, 7,,, 0 7,,,7,,0,,,,0,0,,7,,, 7,,0,7 Thermistor resistance [khm] 00 o T [K] T [ C] Values for NCP0ME0RL thermistor: R T0 =. kω ± % at T0 = K; 000 Resistance vs Temperature for NCP0ME0RL Thermistor Temperature [K] T [K] o 0 T [ C] - Rm in [kω] Rnom [kω] Rm ax [kω],7 77,, -,0,0,7 -,,, -7 0, 0,, - 07,7,,7 0 -,7 7,, -,, 70, -7 0,07,7 0, -77, 0,, 0,,7,,,,,,,,,,,,0, ,0,, 7,,7,7 0 -,0 7, 0, 0-7 7,,7, 0-00,,, 0-77,,77 0, 7

8 Application Notes ptical Immersion ptical immersion is achieved by using high refractive index microlenses in order to improve performance of the devices but may limit acceptance angle. ptical immersion is monolithic integration of detector element with hyperhemispherical microlens (basic configuration) that makes optical size of detector times larger compared to its physical size. This results in improvement of D* by one order of magnitude and electric capacitance by a factor of two orders of magnitude less compared to conventional detector of the same optical area. Function and properties of hemispherical and hyperhemispherical lenses are illustrated in the Figure and the Table below. Parameter Distance L Acceptance Angle F/# Hemisphere Hyperhemisphere Theory GaAs Theory GaAs R R R(n+).R n. n 0. n. n 0. Φ 0 0 arcsin(/n) n/. d d' D*imm D*non imm Table. Immersed Detectors Parameters n a refractive index of a lens material (~. for GaAs used by VIG) d optical (apparent) detector size d' physical detector size R lens radius L lens face to objective focal plane distance R - lens thickness h=r + n The values in the above Table show the relative change of a given parameter comparing to a non-immersed detector of the same optical size. Detectors with custom acceptance angles are available upon request. Figure. Function and properties of hemispherical and hyperhemispherical lense Immersion Technology is described in Infrared Detectors and Systems, E.L. Dereniak and G.D. Boreman, iley Interscience, 000.

9 Application Notes Preamplifiers for IR Photodetectors Preamplifiers are used to amplify weak signals from low noise photodetectors and provide optimal conditions for detector operation. In addition, preamplifiers protect detectors against overbias and make the detector/preamplifier system immune to electromagnetic interferences. e offer a variety of transimpedance preamplifiers, AC and DC coupled, with narrow and wide bandwidths, standing alone or integrated with detector in common packages called Detection Modules. The transimpedance preamplifiers are preferable in most of applications due to inherent linearity and good frequency response. Transimpedance Preamplifiers The current readout of infrared detectors is typically achieved in transimpedance (TI) preamplifiers. Important advantage of the TI amp is the ability to maintain the detector at constant bias voltage, equal to voltage applied to the non-inverting input of the op-amp. Simple description of the detector/ti preamplifier system, schematically shown in Figure. The detector is modeled by a photocurrent source Iph, shunt resistance Rd and capacitance Cd. The photocurrent is proportional to the input optical power P and detector current responsivity Ri. Iph=Ri P () Transimpedance preamplifier is an operational amplifier with feedback resistance Rf. Feedback capacitance Cf is used to set system bandwidth and eliminate gain peaking at high frequencies. Noise As follows from the transimpedance circuit (Figure ), the preamplifier noise current can be approximated as: ipa = k T en +in + Rf Zd () where in and en are the op-amp open input noise current and short input noise voltage, respectively. Zd is the detector impedance: Rd Zd= (7) +(π f Cd Rd) At low frequencies preamplifier noise (frequently called floor noise level ) is not dependent on frequency: ipa = k T en +in + Rf Rd () At large frequencies the noise current increases due to decreasing detector impedance: ipa =π f Cd en () Incorrect frequency compensation of transimpedance amplifier may cause remarkable increase of the noise level near the top cut-off frequency (as shown in Figure ). Cf Rf Input current noise uput voltage noise en Iph in Rd Cd V Transimpedance Figure. Transimpedance circuit for infrared photodetector The output voltage of the transimpedance preamplifier is: V 0 =Z f Iph () The transimpedance gain Zf can be approximated by one-pole filter characteristics: Rf Zf = () +( π f) Cf R f Figure. utput noise density the transimpedance amplifier. and frequency f = π f Cf R f () It should be noted that the cut-off frequency is typically greater compared with the voltage preamplifier when bandwidth is limited by the detector Rd Cd time constant. For frequencies less than the db cut-off frequency f, transimpedance is equal to Rf. In consequence, the circuit converts linearly optical input power P into output voltage: V 0 =R i R f P () with resulting voltage responsivity Rv=Ri Rf independent on frequency, detector resistance and capacitance. Unfortunately, the above considerations are limited to maximal frequencies dependent on detector capacitance and resistance, op-amp gain-bandwidth product and other factors. of How Preamplifier Affects System Performance Total input current noise of a detection module is: in =ipa +i d with cut-off frequency: response (0) This results in degradation of the overall detectivity of the detector/preamplifier system by in/id factor. The degradation may be significant for low impedance detectorshaving low resistance <0 Ω) or, at high frequencies, having large capacitance. The design of preamplifiers is dependent on required bandwidth, gain, detector resistance, capacitance and other factors. The crucial step is the selection of suitable op-amps or discrete transistors. Bipolar nv pa op-amps are characterized by large in and low en, Hz Hz fa in contrast to FET-based preamplifiers where in is low and en Hz nv is large. Therefore, the low en-bipolar op-amps suits well to Hz low Zd detectors (which means low resistance, large capacitance and high frequencies). FET-based op-amps are useful for high Z d detectors operating at low frequencies.

10 Application Notes IR Detectors Packages Applications VIG detectors are mounted in several packages (please see Table below). The packages are filled with dry, heavy noble gases for low thermal conductivity (Kr/e mixtures). ater vapor condensation is prevented by careful sealing and water absorbers applied inside the package. The typical applications of the VIG System S.A. detectors are given in the Table below. Please, provide detailed system requirements our Engineering Team recommend optimum solution. Package Detector Type T PC*), PCI*), PV*), PVI*), PVM*), PVMI*), PC-nTE, PCI-nTE, PV-nTE, PVI-nTE, PVM-nTE, PVMI-nTE, PCQ, PVMQ T PC, PCI, PV, PVI, PVM, PVMI BNC PC, PCI, PV, PVI, PVM, PVMI PEM PEM, PEMI Quadrant *) PCQ, PVMQ *) Upon special request. For detailed information please see Appendix Technical Drawings. Applications Detector Series - Examples Spectroscopy PCI-TE, PVI-nTE, PVI, PCI Positioning Systems PV, PV-TE Laser Metrology PV, PV-TE, PVM, PVM-TE, PEM, PEMI High Speed peration PVI-nTE, PVI, PVM, PVMI, PEM, PEMI Analysis of Spatial and Time Distribution of Laser Beam PV, PV-nTE, PVM, PVM-nTE Remote Temperature Measurements PV-nTE, PVI-nTE, PVI-nTE, PCI, PCI-nTE Heterodyne Detection PV-TE, PVI-nTE, PCI, PCI-nTE Biomedical Applications PV, PVI-nTE, PVM, PVMI, PEM, PEMI Pyrometers, Scanners PV-TE, PVI-nTE, PCI, PCI-nTE Thermal Imagers PV-TE, PVI-nTE, PCI, PCI-nTE Gas Analysis PCI-TE, PVI-nTE, PVI, PCI LIDAR PVI-nTE, PCI-nTE Detection and Monitoring of Thermal bjects PV-TE, PVI-nTE PCI, PCI-nTE Laser-Matter Interaction Studies PV, PV-TE, PVM, PVM-TE, PEM, PEMI Fire, Flame and Human Body Detection PV-TE, PVI-nTE, PCI, PCI-nTE Free Space ptical Communication PVI-nTE, PVI Laser Threat arning PCI, PVI, PVMI Tracking Systems PV, PV-TE, PC, PCI, PCI-TE, PC-TE Nondestructive Material Testing All Devices IR indows VIG TE cooled detectors are typically provided with: wedged Al windows (wal) wedged ZnSe AR coated windows (wznsear) wedge prevents fringing - interference from stray back reflections. e offer windows optimized for different spectral bands also. Percentage of MIR and LIR radiation that can pass through VIG detector windows is presented in the Figures below. indows can be anti-reflection (AR) coated on two surfaces. It is possible to use windows provided by the User (upon request). Figure. Percentage of IR radiation that can pass through the window. 0

11 Application Notes Custom Engineering / Design n the following pages of this catalogue you will find detailed specifications of devices that are currently offered by VIG System. However, our Engineering Team - including engineers experienced in optoelectronics, mechanical engineering and electronics is ready to help solve the most sophisticated and complex problems related to infrared radiation detection & measurements. The technology developed at VIG System is very flexible, permitting construction of devices for specific applications. Precautions for Use perating Temperature Soldering Leads A detector should be operated at its optimal temperature given in the Final Test Report (delivered with every device). IR detectors can be easily damaged by excessive heat. Special care should be taken when soldering the leads. Usage of heat sinks is highly recommended. Tweezers can be used for this purpose; when soldering, clamp a lead at a place between the soldering iron and the base of the package. To avoid destructive influence of ESD and other accidental voltages (e.g. from a non-grounded soldering iron) rules for handling LSI integrated circuits should be applied to IR detectors too. Leads should be soldered at +70 C or below within s. Maximum Voltage Do not operate the PV detector at higher bias voltages than suggested in the Final Test Report (delivered with every device). Be Careful Using hmmeters for PV Detectors! Standard ohmmeters may overbias and damage the detector. This is especially true for small physical area or SIR PV detectors. Bias of 0 mv can be used for resistance measurements of any type of detector. Ask for conditions of I-V plot measurements! Usage Devices can operate in the 0% to 0 % humidity, in the -0 C to +0 C ambient temperature range. peration at >0 C ambient may reduce performance for standard Peltier coolers.. Ask for systems that can operate in the +0 C to +0 C ambient temperature range. Storage The following conditions should be fulfilled for safe and reliable operation of detector: store in dark place, 0% to 0% humidity and -0 C to +0 C temperature, avoid exposing to the direct sunlight and strong UV/VIS light as this may result in degradation of the detector performance, avoid electrostatic discharges at leads therefore, the devices should be stored having leads shorted. Beam Power Limitations Damage thresholds, specified as integrated power of incoming radiation: for detectors without immersion lens irradiated with continuous wave (C) or single pulse longer than µs irradiance on the active area must not exceed 00 /cm. The irradiance of the pulse shorter than µs must not exceed M/cm, for optically immersed detectors irradiated with C or single pulse longer than µs irradiance on the apparent optical active area must not exceed. /cm. The irradiance of the pulse shorter than µs must not exceed 0 k/cm, for repeated irradiation with pulses shorter than µs, the equivalent C irradiation, average power over the pulse - to - pulse period should be less than the C damage threshold according to equation: equivalent C = pulsepeak power pulse repetition ) (duration) ( rate ) (radiation focus area power ) ( Saturation thresholds vary by detector type and can be provided upon request. Handling Some IR indow materials such as BaF are soft and brittle. Particular attention should be paid to not scratch a surface of the window. A damaged window may entirely degrade the detector performance. Excessive mechanical stress applied to the package itself or to a device containing the package may result in permanent damage. Peltier element inside thermoelectrically cooled detectors is susceptible to mechanical shocks. Great care should be taken when handling cooled detectors. Cleaning indow Keep the indow clean. Use a soft cotton cloth damped with isopropyl alcohol and wipe off the surface gently if necessary. Mechanical Shocks The Peltier elements may be damaged by excessive mechanical shock or vibration. Care is recommended during manipulations and normal use. Drop impacts against a hard surface are particularly dangerous. Shaping Leads Avoid bending the leads at a distance less than mm from a base of the package to prevent glass seal damage. hen shaping the leads, maximum two right angle bends and three twists at the distance minimum mm from the base of the package. Keep the leads of the detecting element shorted when shaping!

12 RDER CDE How to Compile Your rder Code? Different information such as detector type, optical immersion, number of stages TE-cooler, the wavelength a detector is optimized for, dimensions of optical area, package type, window type and FV combine to create VIG System's Detector rder Code. Type Type Immersion Immersion - Cooling Cooling - λopt λopt Examples PVI-TE--0.x0.-T-wBaF- PV I TE - PEM-0.-x-PEM-wBaF- PEM - Below, there are information needed to specify exactly the required detector. - Length x idth ΦDiameter - Package Type - Package Type - indow indow - FV - FV - 0. x 0. - T - wal x PEM - wznsear - PC-0.-x-BNC-Noindow-0 PC x BNC - Noindow - 0 PVI-TE--Φ0.0-T-pGeAR-0 PV I TE T - Φ0.0 pgear - Detector Types PC photoconductor PEM photoelectromagnetic detector PV single junction photovoltaic detector PVM LIR multiple junction photovoltaic detector PCQ quadrant photoconductor PVMQ quadrant LIR multiple junction photovoltaic detector ptical Immersion TE Cooling All detectors can be monolithically integrated with immersion microlens. Please add letter I to the end of Detector Type symbol for immersed detectors. Hyperhemispherical immersion microlens is offered as a standard. VIG PC, PV and PVM detectors are available as uncooled devices or equipped with multiple stage TE cooling. Please add TE, TE or TE for two-, three-, or four stage TE cooled detectors respectively. avelength Range and ptimum awalength λopt VIG standard detectors are optimized for specific wavelength (see Table below). ther wavelengths are available as an option. Detector Type PC, PCI PC-TE, PCI-TE PC-TE, PCI-TE PC-TE, PCI-TE PV, PVI PV-nTE, PVI-nTE PVM, PVMI, PVM-nTE, PVMI-nTE PEM, PEMI, PCQ, PVMQ ptimum avelength [μm]

13 rder Code ptical Area Availability Table Typical VIG detectors are squared-shaped. Single junction photovoltaic devices are also available as a circular upon request. Detector Type PV- PV-TE- PV-TE- PV-TE- PVI- PVI-TE- PVI-TE- PVI-TE- PV-. PV-TE-. PV-TE-. PV-TE-. PVI-. PVI-TE-. PVI-TE-. PVI-TE-. PC- PC-TE- PCI- PCI-TE- PV- PV-TE- PV-TE- PV-TE- PVI- PVI-TE- PVI-TE- PVI-TE- PC- PC-TE- PCI- PCI-TE- PV- PV-TE- PV-TE- PV-TE- PVI- PVI-TE- PVI-TE- PVI-TE- PVI-TE- PC- PC-TE- PCI- PCI-TE- PV- PV-TE- PV-TE- PV-TE- PVI- PVI-TE- PVI-TE- PVI-TE- PV- PV-TE- PV-TE- PV-TE- PVI- PVI-TE- PVI-TE- PVI-TE- PVM- PVM-TE- PVMI- PVMI-TE- PVMI-TE- PVMI-TE- PC- PC-TE- PC-TE- PC-TE- PCI- PCI-TE- PCI-TE- PCI-TE- PC-0. PC-TE-0. PC-TE-0. PC-TE-0. Please specify dimension (length width) for square or diameter (Φ) for circular areas. ptical Area [mm mm] *) *) *) *) P P P P *) *) *) *) P P P P

14 rder Code ptical Area [mm mm] Detector Type PCI-0. PCI-TE-0. PCI-TE-0. PCI-TE-0. *) PV-TE-0. P *) PV-TE-0. P PV-TE-0. *) P PVI-TE-0. *) PVI-TE-0. *) PVI-TE-0. *) PVM-0. PVM-TE-0. PVMI-0. PVMI-TE-0. PVMI-TE-0. PVMI-TE-0. PEM-0. PEMI-0. PCQ-0. PC-TE- PC-TE- PC-TE- PCI-TE- PCI-TE- PCI-TE- PC-TE- PC-TE- PC-TE- PCI-TE- PCI-TE- PCI-TE- PC-TE- PCI-TE- *) Devices may require reverse bias in order to increase dynamic resistance and improve frequency response. standard detector - operating without bias P default - operating with reverse bias detectors available upon request, parameters may vary from these in data sheets P P P Package Type VIG detectors are typically offered in four different packages: Package Type Detector Type BNC, T T PEM PC, PCI, PV, PVI, PVM, PVMI PC-nTE, PCI-nTE, PV-nTE, PVI-nTE, PVM-nTE, PVMI-nTE, PCQ, PVMQ PEM, PEMI indow Type VIG TE cooled detectors are typically provided with: wedged Al windows (wal) wedged ZnSe AR coated window (wznsear) ther indows are available as following options: Hardness Material AR Coating [kg/mm] BaF Si 00 ZnSe 0 wedged wedged planar wedged planar no yes yes yes yes wbaf wsiar psiar wznsear pznsear hen no window is needed (for uncooled detectors), Noindow attribute must be added. Material Hardness [kg/mm] Al 70 AR Coating yes no yes no yes yes walar wal palar pal wgear pgear wedged planar Ge 70 wedged planar black standard (without extra charge) red nonstandard with extra charge Field of View: FV Angular field of view of detector in degrees [ ]. FV depends on type of immersion microlens applied and package used for the detector. For detailed information please see Appendix Technical Drawings.

15 Infrared Detectors

16 Feature Series Parameter ptimal avelength λopt, [µm]. / PC-λopt PC-TE-λopt PC-TE-λopt PC-TE-λopt PCI-λopt PCI-TE-λopt PCI-TE-λopt PCQ-λopt PEM-λopt PEMI-λopt PV-TE-λopt PV-TE-λopt PV-TE-λopt PVI-λopt PVI-TE-λopt PVI-TE-λopt PVM-λopt PVM-TE-λopt PVMI-λopt PVMI-TE-λopt PVMI-TE-λopt PVMI-TE-λopt D* [cm Hz / -].0 0 τ [ns] D* [cm Hz ] τ [ns] 000 D* [cm Hz -].0 0 τ [ns] /.0 0 τ [ns] / -] τ [ns] D* [cm Hz/ -].0 07 D* [cm Hz -]. 0 0 τ [ns] D* [cm Hz / -] τ [ns] D* [cm Hz/ -] τ [ns] 0 D* [cm Hz -] τ [ns] D* [cm Hz 0 / -] τ [ns] D* [cm Hz / -] τ [ns] D* [cm Hz/ -] τ [ns]. D* [cm Hz/ -] τ [ns] τ [ns] D* [cm Hz / τ [ns] -] TE ~0K no TE ~0K no TE ~K no 0 uncooled ~00K yes TE ~0K yes TE ~0K yes TE ~K yes uncooled ~00K no uncooled ~00K no uncooled ~00K yes 7 uncooled ~00K no TE ~0K no TE ~0K no 0 TE ~K no uncooled ~00K yes TE ~0K yes TE ~0K yes TE ~K yes uncooled ~00K no TE ~0K no 7 uncooled ~00K yes TE ~0K yes TE ~0K yes 0 TE ~K yes D* [cm Hz/ -] D* [cm Hz 7 -] no τ [ns] / ~00K D* [cm Hz/ -] τ [ns] uncooled 0 D* [cm Hz/ -] τ [ns] Page Immersion Lens D* [cm Hz/ -] τ [ns]. 0 τ [ns] D* [cm Hz ]. 0 perating Temperature ] Cooling ] / / τ [ns] τ [ns] D* [cm Hz τ [ns] D* [cm Hz D* [cm Hz/ -] D* [cm Hz 7 D* [cm Hz/ -] τ [ns] / / PVI-TE-λopt τ [ns] / PV-λopt D* [cm Hz -] / PCI-TE-λopt

17 PC Series μm IR PHTCNDUCTRS Example of D* vs avelength λ for PC Series HgCdTe Detectors. Spectral Characteristics of individual detectors may vary from those shown on the chart. Features Description Ambient temperature operation Perfect match to fast electronics Convenient to use ide dynamic range Low cost Prompt delivery Custom design upon request The PC-λopt (λopt - optimal wavelength in micrometers) feature IR photoconductive detector. This series is easy to use, no cooling or heatsink needed. The devices are optimized for the maximum performance at λopt. Cut-on wavelength is limited by GaAs transmittance (~0. µm). Bias is needed to operate photocurrent. Performance at low frequencies (<0 khz) is reduced due to /f noise. Highest performance and stability are achieved by application of variable gap (HgCd)Te semiconductor, optimized doping and sophisticated surface processing. Standard detectors are available in T or BNC packages without windows. Various windows, other packages and connectors are available upon request. IR Detector C Parameter ptimal avelength*) λpeak, 0 λopt, 0 khz Voltage Responsivity idth mm Time Constant Corner Frequency Bias Current - idth Ratio Sheet Resistance perating Temperature Acceptance Angle, F/# *) λopt Unit µm PC- PC- PC- PC- PC D* cm Hz to 0 to to 0 to to 0 to 0 00 to to to 00 ~00 >0, to 0 0 to 0 Rv w τ /f Ib w Rsq T Φ, - V mm ns khz ma mm Ω K deg, - ther ptimal avelengths available upon request. Data Sheet states minimum guaranteed D* values for each detector model. Higher performance detectors can be provided upon request. **) Type ptical Area [mm mm] PC- PC- PC- PC- PC standard detectors 7

18 μm IR PHTCNDUCTRS THERMELECTRICALLY CLED PC-TE Series Example of D* vs avelength λ for PC-TE Series HgCdTe Detectors. Spectral Characteristics of individual detectors may vary from those shown on the chart. Features Description High performance in the to μm spectral range Fast response Convenient to use ide dynamic range Compact, rugged and reliable Low cost Prompt delivery Custom design upon request The PC-TE-λopt photodetectors series (λopt - optimal wavelength in micrometers) feature IR photoconductive detector on two-stage thermoelectrical cooler. The devices are optimized for the maximum performance at λopt. Cut-on wavelength is limited by GaAs transmittance (~0. µm). Bias is needed to operate photocurrent. Performance at low frequencies (<0 khz) is reduced due to /f noise. Highest performance and stability are achieved by application of variable gap (HgCd)Te semiconductor, optimized doping and sophisticated surface processing. Custom devices with quadrant cells, multielement arrays, different windows, lenses and optical filters are available upon request. Standard detectors are available in T packages with wal or wznsear windows. ther packages, windows and connectors are also available. IR Detector C Parameter ptimal avelength*) λopt λpeak, 0 khz λopt, 0 khz Voltage Responsivity Rv w idth mm Time Constant τ Corner Frequency /f Ib Bias Current - idth Ratio w Sheet Resistance Rsq perating Temperature T Acceptance Angle, F/# Φ, *) Unit µm cm Hz V mm ns khz ma mm Ω K deg, - PC-TE- PC-TE- PC-TE- PC-TE- PC-TE-0. PC-TE- PC-TE to 0 0 to to to to 0 00 to to to 00 0 to 00 ~0 70, 0.7 to 0 to 0 0 to 00 0 to 0 ther ptimal avelengths available upon request. Data Sheet states minimum guaranteed D* values for each detector model. Higher performance detectors can be provided upon request. **) Type ptical Area [mm mm] PC-TE- PC-TE- PC-TE- PC-TE- PC-TE-0. PC-TE- PC-TE standard detectors

19 μm IR PHTCNDUCTRS THERMELECTRICALLY CLED PC-TE Series Example of D* vs avelength λ for PC-TE Series HgCdTe Detectors. Spectral Characteristics of individual detectors may vary from those shown on the chart. Features Description High performance in the to μm spectral range Fast response Convenient to use ide dynamic range Compact, rugged and reliable Low cost Prompt delivery Custom design upon request The PC-TE-λopt photodetectors series (λopt - optimal wavelength in micrometers) feature IR photoconductive detector on three-stage thermoelectrical cooler. The devices are optimized for the maximum performance at λopt. Cut-on wavelength is limited by GaAs transmittance (~0. µm). Bias is needed to operate photocurrent. Performance at low frequencies (<0 khz) is reduced due to /f noise. Highest performance and stability are achieved by application of variable gap (HgCd)Te semiconductor, optimized doping and sophisticated surface processing. Custom devices with quadrant cells, multielement arrays, different windows, lenses and optical filters are available upon request. Standard detectors are available in T packages with wznsear windows. ther packages, windows and connectors are also available. IR Detector C Parameter ptimal avelength*) λpeak, 0 λopt, 0 khz Voltage Responsivity idth mm Time Constant Corner Frequency Bias Current - idth Ratio Sheet Resistance perating Temperature Acceptance Angle, F/# *) λopt Unit µm D* cm Hz Rv w τ /f Ib w Rsq T Φ, - V mm ns khz ma mm Ω K deg, - PC-TE- PC-TE PC-TE- PC-TE to 0 to 0 0 to 00 0 to 0 ~0 70, 0.7 ther ptimal avelengths available upon request. Data Sheet states minimum guaranteed D* values for each detector model. Higher performance detectors can be provided upon request. **) Type ptical Area [mm mm] PC-TE- PC-TE-0. PC-TE- PC-TE standard detectors

20 μm IR PHTCNDUCTRS THERMELECTRICALLY CLED PC-TE Series Example of D* vs avelength λ for PC-TE Series HgCdTe Detectors. Spectral Characteristics of individual detectors may vary from those shown on the chart. Features Description High performance in the to μm spectral range Fast response Convenient to use ide dynamic range Compact, rugged and reliable Low cost Prompt delivery Custom design upon request The PC-TE-λopt photodetectors series (λopt - optimal wavelength in micrometers) feature IR photoconductive detector on four-stage thermoelectrical cooler. The devices are optimized for the maximum performance at λopt. Cut-on wavelength is limited by GaAs transmittance (~0. µm). Bias is needed to operate photocurrent. Performance at low frequencies (<0 khz) is reduced due to /f noise. Highest performance and stability are achieved by application of variable gap (HgCd)Te semiconductor, optimized doping and sophisticated surface processing. Custom devices with quadrant cells, multielement arrays, different windows, lenses and optical filters are available upon request. Standard detectors are available in T packages with wznsear windows. ther packages, windows and connectors are also available. IR Detector C Parameter ptimal avelength*) λpeak, 0 λopt, 0 khz Voltage Responsivity idth mm Time Constant Corner Frequency Bias Current - idth Ratio Sheet Resistance perating Temperature Acceptance Angle, F/# *) λopt Unit µm PC-TE- PC-TE PC-TE- PC-TE- PC-TE- D* cm Hz to 0 Rv w τ /f Ib w Rsq T Φ, - V mm ns khz ma mm Ω K deg, - to 0 0 to 0 0 to 00 ~ 70, to 0 ther ptimal avelengths available upon request. Data Sheet states minimum guaranteed D* values for each detector model. Higher performance detectors can be provided upon request. **) Type ptical Area [mm mm] PC-TE- PC-TE-0. PC-TE- PC-TE- PC-TE standard detectors 0

21 μm IR PHTCNDUCTRS PTICALLY IMMERSED PCI Series Example of D* vs avelength λ for PCI Series HgCdTe Detectors. Spectral Characteristics of individual detectors may vary from those shown on the chart. Features Description Ambient temperature operation Perfect match to fast electronics Convenient to use ide dynamic range Low cost Prompt delivery Custom design upon request The PCI-λopt photodetectors series (λopt - optimal wavelength in micrometers) feature IR photoconductive detector, optically immersed to high refractive index GaAs hyperhemispherical (standard) or hemispherical or any intermediate lens (as option) for different acceptance angle and saturation level. This series is easy to use, no cooling or heatsink needed. The devices are optimized for the maximum performance at λopt. Cut-on wavelength is limited by GaAs transmittance (~0. µm). Bias is needed to operate photocurrent. Performance at low frequencies (<0 khz) is reduced due to /f noise. Highest performance and stability are achieved by application of variable gap (HgCd)Te semiconductor, optimized doping and sophisticated surface processing. Standard detectors are available in T or BNC packages without windows. Various windows, other packages and connectors are available upon request. IR Detector C Parameter ptimal avelength*) λpeak, 0 λopt, 0 khz Voltage Responsivity idth mm Time Constant Corner Frequency Bias Current - idth Ratio Sheet Resistance perating Temperature Acceptance Angle, F/# *) λopt Unit µm PC- PC- PC- PC- PC D* cm Hz to 0 to to to 0 to to 0 00 to to to 00 ~00,. 0 to 0 0 to 0 Rv w τ /f Ib w Rsq T Φ, - V mm ns khz ma mm Ω K deg, - ther ptimal avelengths available upon request. Data Sheet states minimum guaranteed D* values for each detector model. Higher performance detectors can be provided upon request. **) Type ptical Area [mm mm] PCI- PCI- PCI- PCI- PCI standard detectors

22 μm IR PHTCNDUCTRS THERMELECTRICALLY CLED PTICALLY IMMERSED PCI-TE Series Example of D* vs avelength λ for PCI-TE Series HgCdTe Detectors. Spectral Characteristics of individual detectors may vary from those shown on the chart. Features Description High performance in the to μm spectral range Fast response Convenient to use ide dynamic range Compact, rugged and reliable Low cost Prompt delivery Custom design upon request The PCI-TE-λopt photodetectors series (λopt - optimal wavelength in micrometers) feature IR photoconductive detector on two-stage thermoelectrical cooler, optically immersed to high refractive index GaAs hyperhemispherical (standard) or hemispherical or any intermediate lens (as option) for different acceptance angle and saturation level. The devices are optimized for the maximum performance at λopt. Cut-on wavelength is limited by GaAs transmittance (~0. µm). Bias is needed to operate photocurrent. Performance at low frequencies (<0 khz) is reduced due to /f noise. Highest performance and stability are achieved by application of variable gap (HgCd)Te semiconductor, optimized doping and sophisticated surface processing. Custom devices with quadrant cells, multielement arrays, different windows, lenses and optical filters are available upon request. Standard detectors are available in T packages with wal or wznsear windows. ther packages, windows and connectors are also available. IR Detector C Parameter ptimal avelength*) λopt λpeak, 0 khz λopt, 0 khz Voltage Responsivity Rv w idth mm Time Constant τ Corner Frequency /f Ib Bias Current - idth Ratio w Sheet Resistance Rsq perating Temperature T Acceptance Angle, F/# Φ, *) Unit µm PCI-TE- PCI-TE- PCI-TE- PCI-TE- PCI-TE-0. PCI-TE- PCI-TE- 0. cm Hz to to to to 0. to 00 to to to 00 0 to 00 ~0,. V mm ns khz ma mm Ω K deg, - to 0 0 to 0 0 to 00 0 to 0 ther ptimal avelengths available upon request. Data Sheet states minimum guaranteed D* values for each detector model. Higher performance detectors can be provided upon request. **) Type ptical Area [mm mm] PCI-TE- PCI-TE- PCI-TE- PCI-TE- PCI-TE-0. PCI-TE- PCI-TE standard detectors

23 μm IR PHTCNDUCTRS THERMELECTRICALLY CLED PTICALLY IMMERSED PCI-TE Series Example of D* vs avelength λ for PCI-TE Series HgCdTe Detectors. Spectral Characteristics of individual detectors may vary from those shown on the chart. Features Description High performance in the to μm spectral range Fast response Convenient to use ide dynamic range Compact, rugged and reliable Low cost Prompt delivery Custom design upon request The PCI-TE-λopt photodetectors series (λopt - optimal wavelength in micrometers) feature IR photoconductive detector on three-stage thermoelectrical cooler, optically immersed to high refractive index GaAs hyperhemispherical (standard) or hemispherical or any intermediate lens (as option) for different acceptance angle and saturation level. The devices are optimized for the maximum performance at λopt. Cut-on wavelength is limited by GaAs transmittance (~0. µm). Bias is needed to operate photocurrent. Performance at low frequencies (<0 khz) is reduced due to /f noise. Highest performance and stability are achieved by application of variable gap (HgCd)Te semiconductor, optimized doping and sophisticated surface processing. Custom devices with quadrant cells, multielement arrays, different windows, lenses and optical filters are available upon request. Standard detectors are available in T packages with wznsear windows. ther packages, windows and connectors are also available. IR Detector C Parameter ptimal avelength*) λpeak, 0 λopt, 0 khz Voltage Responsivity idth mm Time Constant Corner Frequency Bias Current - idth Ratio Sheet Resistance perating Temperature Acceptance Angle, F/# *) λopt Unit µm D* cm Hz Rv w τ /f Ib w Rsq T Φ, - V mm ns khz ma mm Ω K deg, - PCI-TE- PCI-TE-0. PCI-TE- PCI-TE to 0 0 to 00 to 0 to 0 to 00 0 to 0 ~0,. ther ptimal avelengths available upon request. Data Sheet states minimum guaranteed D* values for each detector model. Higher performance detectors can be provided upon request. **) Type ptical Area [mm mm] PCI-TE- PCI-TE-0. PCI-TE- PCI-TE standard detectors

24 μm IR PHTCNDUCTRS THERMELECTRICALLY CLED PTICALLY IMMERSED PCI-TE Series Example of D* vs avelength λ for PCI-TE Series HgCdTe Detectors. Spectral Characteristics of individual detectors may vary from those shown on the chart. Features Description High performance in the to μm spectral range Fast response Convenient to use ide dynamic range Compact, rugged and reliable Low cost Prompt delivery Custom design upon request The PCI-TE-λopt photodetectors series (λopt - optimal wavelength in micrometers) feature IR photoconductive detector on four-stage thermoelectrical cooler, optically immersed to high refractive index GaAs hyperhemispherical (standard) or hemispherical or any intermediate lens (as option) for different acceptance angle and saturation level. The devices are optimized for the maximum performance at λopt. Cut-on wavelength is limited by GaAs transmittance (~0. µm). Bias is needed to operate photocurrent. Performance at low frequencies (<0 khz) is reduced due to /f noise. Highest performance and stability are achieved by application of variable gap (HgCd)Te semiconductor, optimized doping and sophisticated surface processing. Custom devices with quadrant cells, multielement arrays, different windows, lenses and optical filters are available upon request. Standard detectors are available in T packages with wznsear windows. ther packages, windows and connectors are also available. IR Detector C Parameter ptimal avelength*) λpeak, 0 λopt, 0 khz Voltage Responsivity idth mm Time Constant Corner Frequency Bias Current - idth Ratio Sheet Resistance perating Temperature Acceptance Angle, F/# *) λopt Unit µm PCI-TE- PCI-TE PCI-TE- PCI-TE- PCI-TE- D* cm Hz Rv w τ /f Ib w Rsq T Φ, - V mm ns khz ma mm Ω K deg, - 7 to 0 to 0 to 0 0 to 00 ~,. 0 to 0 ther ptimal avelengths available upon request. Data Sheet states minimum guaranteed D* values for each detector model. Higher performance detectors can be provided upon request. **) Type ptical Area [mm mm] PCI-TE- PCI-TE-0. PCI-TE- PCI-TE- PCI-TE standard detectors

25 - μm IR PHTCNDUCTRS QUADRANT GEMETRY PCQ Series Example of D* vs avelength λ for PCQ Series HgCdTe Detectors. Spectral Characteristics of individual detectors may vary from those shown on the chart. Features Description Ambient temperature operation cm Hz 0 Time constant of ns or less Perfect match to fast electronics Convenient to use ide dynamic range Low cost Prompt delivery Custom design upon request The PCQ-λopt (λopt - optimal wavelength in micrometers) series detectors are quadrant, high speed, ambient temperature IR photoconductive detectors. The devices are optimized for the maximum performance at λ opt. Cut-on wavelength is limited by GaAs transmittance (~0. µm). Bias is needed to operate photocurrent. Performance at low frequencies (<0 khz) is reduced due to /f noise. Highest performance and stability are achieved by application of variable gap (HgCd)Te semiconductor, optimized doping and sophisticated surface processing. The detectors are well suited for broadband C laser detection due to a very short time constant and perfect match to fast electronics. Standard detectors are available in T or specialized Quadrant (with four SMA connectors) packages without windows. Custom devices such as various sizes, configurations, connectors, windows and optical filters are available upon request. IR Detector C Parameter ptimal avelength λpeak, 0 λopt, 0 khz Voltage Responsivity idth mm Time Constant Corner Frequency Bias Current - idth Ratio Sheet Resistance perating Temperature Acceptance Angle, F/# *) λopt Unit µm PCQ D* cm Hz Rv w τ /f Ib w Rsq T Φ, - V mm ns khz ma mm Ω K deg, - 0. to 0 to 0 0 to 0 ~00 0, Data Sheet states minimum guaranteed D* values for each detector model. Higher performance detectors can be provided upon request. Type ptical Area [mm mm] PCQ standard detectors

26 PEM Series μm IR PHTELECTRMAGNETIC DETECTRS Example of D* vs avelength λ for PEM Series HgCdTe Detectors. Spectral Characteristics of individual detectors may vary from those shown on the chart. Features Description Ambient temperature operation No bias required to μm spectral range Time constant of ns or less No flocker noise peration from DC to VHF Lightweight, rugged and reliable Convenient to use Low cost Custom design upon request The PEM series detectors operate on the photoelectromagnetic effect in the semiconductors. The devices are typically optimized for the best performance at 0. µm. The detector includes active element based on (HgCd)Te band gap engineered with selected composition and doping profiles, and miniature permanent magnets to produce a magnetic field. The PEM detectors are well suited for heterodyne detection of 0. µm radiation. Exhibiting no flicker noise, they can be at the same time used for detection of C and low frequency modulated radiation in the whole to µm spectral range. Standard detectors are available in specialized PEM packages (with SMA connectors) with wznsear windows. Custom devices such as single elements of various sizes, quadrant cells and multielement arrays, various specialized packages and connectors are available upon request. IR Detector C Parameter ptimal avelength λpeak, 0 λopt, 0 khz Voltage Responsivity idth mm Time Constant Resistance perating Temperature Acceptance Angle, F/# *) Data λopt Unit µm D* cm Hz Rv w τ R T Φ, - PEM V mm ns Ω K deg, to 00 ~00,. Sheet states minimum guaranteed D* values for each detector model. Higher performance detectors can be provided upon request. Type PEM-0. ptical Area [mm mm] standard detectors detectors available upon request, parameters may vary from these in Data Sheet

27 μm IR PHTELECTRMAGNETIC DETECTRS PTICALLY IMMERSED PEMI Series Example of D* vs avelength λ for PEMI Series HgCdTe Detectors. Spectral Characteristics of individual detectors may vary from those shown on the chart. Features Description Ambient temperature operation No bias required to μm spectral range Time constant of ns or less No flocker noise peration from DC to VHF Lightweight, rugged and reliable Convenient to use Low cost Custom design upon request The PEMI series detectors operate on the photoelectromagnetic effect in the semiconductors, optically immersed to high refractive index hyperhemispherical (standard) or hemispherical (option) lenses.the devices are typically optimized for the best performance at 0. µm. The detector includes active element based on (Hg,Cd)Te band gap engineered with selected composition and doping profiles, and miniature permanent magnets to produce a magnetic field. The PEMI detectors are well suited for heterodyne detection of 0. µm radiation. Exhibiting no flicker noise, they can be at the same time used for detection of C and low frequency modulated radiation in the whole to µm spectral range. Standard detectors are available in specialized PEM packages (with SMA connectors) with wznsear windows. Custom devices such as single elements of various sizes, quadrant cells and multielement arrays, various specialized packages and connectors are available upon request. IR Detector C Parameter ptimal avelength λpeak, 0 λopt, 0 khz Voltage Responsivity idth mm Time Constant Resistance perating Temperature Acceptance Angle, F/# *) Data λopt Unit µm D* cm Hz Rv w τ R T Φ, - PEMI x0.0x07 V mm ns Ω K deg, to 00 ~00,. Sheet states minimum guaranteed D* values for each detector model. Higher performance detectors can be provided upon request. Type ptical Area [mm mm] PEMI-0. standard detectors detectors available upon request, parameters may vary from these in Data Sheet 7

28 PV Series μm IR PHTVLTAIC DETECTRS Example of D* vs avelength λ for PV Series HgCdTe Detectors. Spectral Characteristics of individual detectors may vary from those shown on the chart. The PV-λopt photodetectors series (λopt - optimal wavelength in micrometers) feature IR photovoltaic detector. This series is easy to use, no cooling or heatsink needed. The devices are optimized for the maximum performance at λopt. Cut-on wavelength can be optimized upon request. Reverse bias may significantly increase speed of response and dynamic range. It results also in improved performance at high frequencies, but /f noise that appears in biased devices may reduce performance at low frequencies. Highest performance and stability are achieved by application of variable gap HgCdTe semiconductor, optimized doping and sophisticated surface processing. Standard detectors are available in T or BNC packages without windows. Various windows, other packages and connectors are available upon request. Features Ambient temperature operation No bias required Short time constant No flicker noise peration from DC to VHF Perfect match to fast electronics ide dynamic range Low cost Custom design upon request IR Detector C Parameter ptimal avelength*) λopt λopt Unit µm D* cm Hz Current Responsivity Ri Time Constant Time Constant***) Resistance ptical Area Product perating Temperature Acceptance Angle, F/# PV- PV-.. PV- PV- PV- PV τ τ A ns ns R A Ω cm T Φ, - K deg, - ~00 >0, 0.7 *) ther ptimal avelengths available upon request. Data Sheet states minimum guaranteed D* values for each detector model. Higher performance detectors can be provided upon request. ***) Response which may be achieved at reverse bias (selected detectors upon request). Devices with faster response are availabe upon special request. **) Type PV- PV-. PV- PV- PV- PV- ptical Area*) [mm mm] **) **) P *) Circular shaped ptical Area (Diameter [mm]) can be provided upon request. detectors may require reverse bias in order to increase Dynamic Resistance to improve frequency response. standard detectors P default with reverse bias detectors available upon request; parameters may vary from these in Data Sheet **) Custom

29 μm IR PHTVLTAIC DETECTRS THERMELECTRICALLY CLED PV-TE Series Example of D* vs avelength λ for PV-TE Series HgCdTe Detectors. Spectral Characteristics of individual detectors may vary from those shown on the chart. Features Description High performance in the to µm spectral range Fast response No flicker noise Convenient to use ide dynamic range Compact, rugged and reliable Low cost Prompt delivery Custom design upon request The PV-TE-λopt photodetectors series (λopt - optimal wavelength in micrometers) feature IR photovoltaic detector on two-stage thermoelectrical cooler. The devices are optimized for the maximum performance at λopt. Cut-on wavelength can be optimized upon request. Reverse bias may significantly increase speed of response and dynamic range. It results also in improved performance at high frequencies, but /f noise that appears in biased devices may reduce performance at low frequencies. Highest performance and stability are achieved by application of variable gap HgCdTe semiconductor, optimized doping and sophisticated surface processing. Custom devices with quadrant cells, multielement arrays, different windows, lenses and optical filters are available upon request. Standard detectors are available in T packages with wal or wznsear windows. ther packages, windows and connectors are also available. IR Detector C Parameter ptimal avelength*) λopt λopt Unit µm PV-TE- PV-TE-.. PV-TE- PV-TE- PV-TE- PV-TE- PV-TE D* cm Hz Current Responsivity Ri Time Constant Time Constant***) Resistance ptical Area Product perating Temperature Acceptance Angle, F/# τ τ A ns ns R A Ω cm T Φ, - K deg, - ~0 70, 0.7 ther ptimal avelengths available upon request. Data Sheet states minimum guaranteed D* values for each detector model. Higher performance detectors can be provided upon request. ***) Response which may be achieved at reverse bias (selected detectors upon request). Devices with faster response are availabe upon special request. *) **) Type PV-TE- PV-TE-. PV-TE- PV-TE- PV-TE- PV-TE- PV-TE-0. ptical Area*) [mm mm] **) **) **) P P Circular shaped ptical Area (Diameter [mm]) can be provided upon request. detectors may require reverse bias in order to increase Dynamic Resistance to improve frequency response. standard detectors P default with reverse bias detectors available upon request; parameters may vary from these in Data Sheet *) **) Custom

30 μm IR PHTVLTAIC DETECTRS THERMELECTRICALLY CLED PV-TE Series Example of D* vs avelength λ for PV-TE Series HgCdTe Detectors. Spectral Characteristics of individual detectors may vary from those shown on the chart. Features Description High performance in the to µm spectral range Fast response No flicker noise Convenient to use ide dynamic range Compact, rugged and reliable Low cost Prompt delivery Custom design upon request The PV-TE-λopt photodetectors series (λopt - optimal wavelength in micrometers) feature IR photovoltaic detector on three-stage thermoelectrical cooler. The devices are optimized for the maximum performance at λopt. Cut-on wavelength can be optimized upon request. Reverse bias may significantly increase speed of response and dynamic range. It results also in improved performance at high frequencies, but /f noise that appears in biased devices may reduce performance at low frequencies. Highest performance and stability are achieved by application of variable gap HgCdTe semiconductor, optimized doping and sophisticated surface processing. Custom devices with quadrant cells, multielement arrays, different windows, lenses and optical filters are available upon request. Standard detectors are available in T packages with wal or wznsear windows. ther packages, windows and connectors are also available. IR Detector C Parameter ptimal avelength*) λopt λopt Unit µm PV-TE- PV-TE-.. PV-TE- PV-TE- PV-TE- PV-TE- PV-TE D* cm Hz Current Responsivity Ri Time Constant Time Constant***) Resistance ptical Area Product perating Temperature Acceptance Angle, F/# *) τ τ A ns ns R A Ω cm T Φ, - K deg, - ~0 70, 0.7 ther ptimal avelengths available upon request. Data Sheet states minimum guaranteed D* values for each detector model. Higher performance detectors can be provided upon request. which may be achieved at reverse bias (selected detectors upon request). Devices with faster response are availabe upon special request. **) ***) Response Type PV-TE- PV-TE-. PV-TE- PV-TE- PV-TE- PV-TE- PV-TE-0. ptical Area*) [mm mm] **) **) P P *) Circular shaped ptical Area (Diameter [mm]) can be provided upon request. detectors may require reverse bias in order to increase Dynamic Resistance to improve frequency response. standard detectors P default with reverse bias detectors available upon request; parameters may vary from these in Data Sheet **) Custom 0

31 μm IR PHTVLTAIC DETECTRS THERMELECTRICALLY CLED PV-TE Series Example of D* vs avelength λ for PV-TE Series HgCdTe Detectors. Spectral Characteristics of individual detectors may vary from those shown on the chart. Features Description High performance in the to µm spectral range Fast response No flicker noise Convenient to use ide dynamic range Compact, rugged and reliable Low cost Prompt delivery Custom design upon request The PV-TE-λopt photodetectors series (λopt - optimal wavelength in micrometers) feature IR photovoltaic detector on four-stage thermoelectrical cooler. The devices are optimized for the maximum performance at λopt. Cut-on wavelength can be optimized upon request. Reverse bias may significantly increase speed of response and dynamic range. It results also in improved performance at high frequencies, but /f noise that appears in biased devices may reduce performance at low frequencies. Highest performance and stability are achieved by application of variable gap HgCdTe semiconductor, optimized doping and sophisticated surface processing. Custom devices with quadrant cells, multielement arrays, different windows, lenses and optical filters are available upon request. Standard detectors are available in T packages with wal or wznsear windows. ther packages, windows and connectors are also available. IR Detector C Parameter ptimal avelength*) λopt λopt Unit µm D* cm Hz Current Responsivity Ri Time Constant Time Constant***) Resistance ptical Area Product perating Temperature Acceptance Angle, F/# PV-TE- PV-TE-.. PV-TE- PV-TE- PV-TE- PV-TE- PV-TE τ τ A ns ns R A Ω cm T Φ, - K deg, - ~ 70, 0.7 ther ptimal avelengths available upon request. Data Sheet states minimum guaranteed D* values for each detector model. Higher performance detectors can be provided upon request. ***) Response which may be achieved at reverse bias (selected detectors upon request). Devices with faster response are availabe upon special request. *) **) Type PV-TE- PV-TE-. PV-TE- PV-TE- PV-TE- PV-TE- PV-TE-0. ptical Area*) [mm mm] **) **) P P *) Circular shaped ptical Area (Diameter [mm]) can be provided upon request. detectors may require reverse bias in order to increase Dynamic Resistance to improve frequency response. standard detectors P default with reverse bias detectors available upon request; parameters may vary from these in Data Sheet **) Custom

32 μm IR PHTVLTAIC DETECTRS PTICALLY IMMERSED PVI Series Example of D* vs avelength λ for PVI Series HgCdTe Detectors. Spectral Characteristics of individual detectors may vary from those shown on the chart. The PVI-λopt photodetectors series (λopt - optimal wavelength in micrometers) feature IR photovoltaic detector, optically immersed to high refractive index GaAs hyperhemispherical (standard) or hemispherical or any intermediate lens (as option) for different acceptance angle and saturation level. This series is easy to use, no cooling or heatsink needed. The devices are optimized for the maximum performance at λopt. Cut-on wavelength can be optimized upon request. Reverse bias may significantly increase speed of response and dynamic range. It results also in improved performance at high frequencies, but /f noise that appears in biased devices may reduce performance at low frequencies.highest performance and stability are achieved by application of variable gap HgCdTe semiconductor, optimized doping and sophisticated surface processing. Standard detectors are available in T or BNC packages without windows. Various windows, other packages and connectors are available upon request. Features Ambient temperature operation No bias required Short time constant No flicker noise peration from DC to VHF Perfect match to fast electronics ide dynamic range Low cost Custom design upon request IR Detector C Parameter ptimal avelength*) λopt λopt Unit µm PVI- PVI-.. PVI- PVI- PVI- PVI- D* cm Hz Current Responsivity Ri Time Constant Time Constant***) Resistance ptical Area Product perating Temperature Acceptance Angle, F/# τ τ A ns ns R A Ω cm T Φ, - K deg, - ~00,. ther ptimal avelengths available upon request. Data Sheet states minimum guaranteed D* values for each detector model. Higher performance detectors can be provided upon request. ***) Response which may be achieved at reverse bias (selected detectors upon request). Devices with faster response are availabe upon special request. *) **) Type PVI- PVI-. PVI- PVI- PVI- PVI- ptical Area*) [mm mm] **) P Circular shaped ptical Area (Diameter [mm]) can be provided upon request. **) Custom detectors may require reverse bias in order to increase Dynamic Resistance to improve frequency response. standard detectors P default with reverse bias detectors available upon request; parameters may vary from these in Data Sheet *)

33 μm IR PHTVLTAIC DETECTRS THERMELECTRICALLY CLED PTICALLY IMMERSED PVI-TE Series Example of D* vs avelength λ for PVI-TE Series HgCdTe Detectors. Spectral Characteristics of individual detectors may vary from those shown on the chart. Features Description High performance in the to µm spectral range Fast response No flicker noise Convenient to use ide dynamic range Compact, rugged and reliable Low cost Prompt delivery Custom design upon request The PVI-TE-λopt photodetectors series (λopt - optimal wavelength in micrometers) feature IR photovoltaic detector on two-stage thermoelectrical cooler, optically immersed to high refractive index GaAs hyperhemispherical (standard) or hemispherical or any intermediate lens (as option) for different acceptance angle and saturation level. The devices are optimized for the maximum performance at λopt. Cut-on wavelength can be optimized upon request. Reverse bias may significantly increase speed of response and dynamic range. It results also in improved performance at high frequencies, but /f noise that appears in biased devices may reduce performance at low frequencies. Highest performance and stability are achieved by application of variable gap HgCdTe semiconductor, optimized doping and sophisticated surface processing. Custom devices with quadrant cells, multielement arrays, different windows, lenses and optical filters are available upon request. Standard detectors are available in T packages with wal or wznsear windows. ther packages, windows and connectors are also available. IR Detector C Parameter ptimal avelength*) λopt λopt Unit µm D* cm Hz Current Responsivity Ri Time Constant Time Constant***) Resistance ptical Area Product perating Temperature Acceptance Angle, F/# PVI-TE- PVI-TE-. PVI-TE-. PVI-TE- PVI-TE- PVI-TE- PVI-TE τ τ A ns ns R A Ω cm T Φ, - K deg, - ~0,. *) ther ptimal avelengths available upon request. Data Sheet states minimum guaranteed D* values for each detector model. Higher performance detectors can be provided upon request. ***) Response which may be achieved at reverse bias (selected detectors upon request). Devices with faster response are availabe upon special request. **) Type PVI-TE- PVI-TE-. PVI-TE- PVI-TE- PVI-TE- PVI-TE- PVI-TE-0. ptical Area*) [mm mm] **) **) P P *) Circular shaped ptical Area (Diameter [mm]) can be provided upon request. detectors may require reverse bias in order to increase Dynamic Resistance to improve frequency response. standard detectors P default with reverse bias detectors available upon request; parameters may vary from these in Data Sheet **) Custom

34 μm IR PHTVLTAIC DETECTRS THERMELECTRICALLY CLED PTICALLY IMMERSED PVI-TE Series Example of D* vs avelength λ for PVI-TE Series HgCdTe Detectors. Spectral Characteristics of individual detectors may vary from those shown on the chart. Features Description High performance in the to µm spectral range Fast response No flicker noise Convenient to use ide dynamic range Compact, rugged and reliable Low cost Prompt delivery Custom design upon request The PVI-TE-λopt photodetectors series (λopt - optimal wavelength in micrometers) feature IR photovoltaic detector on three-stage thermoelectrical cooler, optically immersed to high refractive index GaAs hyperhemispherical (standard) or hemispherical or any intermediate lens (as option) for different acceptance angle and saturation level. The devices are optimized for the maximum performance at λopt. Cut-on wavelength can be optimized upon request. Reverse bias may significantly increase speed of response and dynamic range. It results also in improved performance at high frequencies, but /f noise that appears in biased devices may reduce performance at low frequencies. Highest performance and stability are achieved by application of variable gap HgCdTe semiconductor, optimized doping and sophisticated surface processing. Custom devices with quadrant cells, multielement arrays, different windows, lenses and optical filters are available upon request. Standard detectors are available in T packages with wal or wznsear windows. ther packages, windows and connectors are also available. IR Detector C Parameter ptimal avelength*) λopt λopt Unit µm D* cm Hz Current Responsivity Ri Time Constant Time Constant***) Resistance ptical Area Product perating Temperature Acceptance Angle, F/# *) PVI-TE- PVI-TE-. PVI-TE-. PVI-TE- PVI-TE- PVI-TE- PVI-TE τ τ A ns ns R A Ω cm T Φ, - K deg, - ~0,. ther ptimal avelengths available upon request. Data Sheet states minimum guaranteed D* values for each detector model. Higher performance detectors can be provided upon request. which may be achieved at reverse bias (selected detectors upon request). Devices with faster response are availabe upon special request. **) ***) Response Type PVI-TE- PVI-TE-. PVI-TE- PVI-TE- PVI-TE- PVI-TE- PVI-TE-0. ptical Area*) [mm mm] **) **) P P *) Circular shaped ptical Area (Diameter [mm]) can be provided upon request. detectors may require reverse bias in order to increase Dynamic Resistance to improve frequency response. standard detectors P default with reverse bias detectors available upon request; parameters may vary from these in Data Sheet **) Custom

35 μm IR PHTVLTAIC DETECTRS THERMELECTRICALLY CLED PTICALLY IMMERSED PVI-TE Series Example of D* vs avelength λ for PVI-TE Series HgCdTe Detectors. Spectral Characteristics of individual detectors may vary from those shown on the chart. Features Description High performance in the to µm spectral range Fast response No flicker noise Convenient to use ide dynamic range Compact, rugged and reliable Low cost Prompt delivery Custom design upon request The PVI-TE-λopt photodetectors series (λopt - optimal wavelength in micrometers) feature four-stage thermoelectrical cooler IR phptpvoltaic detector, optically immersed to high refractive index GaAs hyperhemispherical (standard) or hemispherical or any intermediate lens (as option) for different acceptance angle and saturation level. The devices are optimized for the maximum performance at λopt. Cut-on wavelength can be optimized upon request. Reverse bias may significantly increase speed of response and dynamic range. It results also in improved performance at high frequencies, but /f noise that appears in biased devices may reduce performance at low frequencies. Highest performance and stability are achieved by application of variable gap HgCdTe semiconductor, optimized doping and sophisticated surface processing. Custom devices with quadrant cells, multielement arrays, different windows, lenses and optical filters are available upon request. Standard detectors are available in T packages with wal or wznsear windows. ther packages, windows and connectors are also available. IR Detector C Parameter ptimal avelength*) λopt λopt Unit µm D* cm Hz Current Responsivity Ri Time Constant Time Constant***) Resistance ptical Area Product perating Temperature Acceptance Angle, F/# *) **) PVI-TE- PVI-TE-. PVI-TE-. PVI-TE- PVI-TE- PVI-TE- PVI-TE τ τ A ns ns R A Ω cm T Φ, - K deg, - ~,. ther ptimal avelengths available upon request. Data sheet states minimum guaranteed D* values for each detector model. Higher performance detectors can be provided upon request. which may be achieved at reverse bias (selected detectors upon request). Devices with faster response are availabe upon special request. ***) Response Type PVI-TE- PVI-TE-. PVI-TE- PVI-TE- PVI-TE- PVI-TE- PVI-TE-0. ptical Area*) [mm mm] **) **) P P Circular shaped ptical Area (Diameter [mm]) can be provided upon request. detectors may require reverse bias in order to increase Dynamic Resistance to improve frequency response. standard detectors P default with reverse bias detectors available upon request; parameters may vary from these in Data Sheet *) **) Custom

36 μm IR PHTVLTAIC MULTIPLE JUNCTIN DETECTRS PVM Series Example of D* vs avelength λ for PVM Series HgCdTe Detectors. Spectral Characteristics of individual detectors may vary from those shown on the chart. Features Description Ambient temperature operation No bias required Short time constant No flocker noise peration from DC to VHF Perfect match to fast electronics ide dynamic range Large area devices Low cost Prompt delivery Custom design upon request The PVM-λopt photodetectors series (λopt - optimal wavelength in micrometers) feature IR multiple junction photovoltaic detector. The devices are optimized for the maximum performance at λ opt. Highest performance and stability are achieved by application of variable gap HgCdTe semiconductor, optimized doping and sophisticated surface processing. Standard detectors are available in T or BNC packages without windows. Various windows, other packages and connectors are available upon request. IR Detector C Parameter ptimal avelength*) λopt Current Responsivity idth mm Time Constant Resistance perating Temperature Acceptance Angle, F/# *) **) λopt Unit µm PVM- PVM D* cm Hz to to 0 Ri w τ R T Φ, - A mm ns Ω K deg, - ~00 >0, 0.7 ther ptimal avelengths available upon request. Data Sheet states minimum guaranteed D* values for each detector model. Higher performance detectors can be provided upon request. Type PVM- PVM-0. ptical Area [mm mm] standard detectors detectors available upon request, parameters may vary from these in Data Sheet

37 μm IR PHTVLTAIC MULTIPLE JUNCTIN DETECTRS THERMELECTRICALLY CLED PVM-TE Series Example of D* vs avelength λ for PVM-TE Series HgCdTe Detectors. Spectral Characteristics of individual detectors may vary from those shown on the chart. Features Description High performance in the to µm spectral range Fast response No flicker noise Convenient to use ide dynamic range Compact, rugged and reliable Low cost Prompt delivery Custom design upon request The PVM-TE-λopt photodetectors series (λopt - optimal wavelength in micrometers) feature IR multiple junction photovoltaic detector on two-stage thermoelectrical cooler. The devices are optimized for the maximum performance at λopt, large area devices. Highest performance and stability are achieved by application of variable gap HgCdTe semiconductor, optimized doping and sophisticated surface processing. Custom devices with quadrant cells, multielement arrays, different windows, lenses and optical filters are available upon request. Standard detectors are available in T packages with wznsear windows. ther packages, windows and connectors are also available. IR Detector C Parameter ptimal avelength*) λopt Current Responsivity idth mm Time Constant Resistance perating Temperature Acceptance Angle, F/# *) **) λopt Unit µm PVM-TE- PVM-TE D* cm Hz to to 0 Ri w τ R T Φ, - A mm ns Ω K deg, - ~0 70, 0.7 ther ptimal avelengths available upon request. Data Sheet states minimum guaranteed D* values for each detector model. Higher performance detectors can be provided upon request. Type PVM-TE- PVM-TE-0. ptical Area [mm mm] standard detectors detectors available upon request, parameters may vary from these in Data Sheet 7

38 μm IR PHTVLTAIC MULTIPLE JUNCTIN DETECTRS PTICALLY IMMERSED PVMI Series Example of D* vs avelength λ for PVMI Series HgCdTe Detectors. Spectral Characteristics of individual detectors may vary from those shown on the chart. Features Description Ambient temperature operation No bias required Short time constant No flocker noise peration from DC to VHF Perfect match to fast electronics ide dynamic range Low cost Custom design upon request The PVMI-λopt photodetectors series (λopt - optimal wavelength in micrometers) feature IR multiple junction optically immersed photovoltaic detector. The devices are optimized for the maximum performance at λ opt. Highest performance and stability are achieved by application of variable gap HgCdTe semiconductor, optimized doping and sophisticated surface processing. Standard detectors are available in T or BNC packages without windows. Various windows, other packages and connectors are available upon request. IR Detector C Parameter ptimal avelength*) λopt Current Responsivity idth mm Time Constant Resistance perating Temperature Acceptance Angle, F/# *) **) λopt Unit µm D* cm Hz Ri w τ R T Φ, - A mm ns Ω K deg, - PVMI- PVMI to to 0 ~00,. ther ptimal avelengths available upon request. Data Sheet states minimum guaranteed D* values for each detector model. Higher performance detectors can be provided upon request. Type ptical Area [mm mm] PVMI- PVMI-0. standard detectors detectors available upon request, parameters may vary from these in Data Sheet

39 μm IR PHTVLTAIC MULTIPLE JUNCTIN DETECTRS THERMELECTRICALLY CLED PTICALLY IMMERSED PVMI-TE Series Example of D* vs avelength λ for PVMI-TE Series HgCdTe Detectors. Spectral Characteristics of individual detectors may vary from those shown on the chart. Features Description High performance in the long wavelengths range without The PVMI-TE-λopt photodetectors series (λopt - optimal wavelength in micrometers) LN cooling feature IR multiple junction optically immersed photovoltaic detectors on two-stage Fast response thermoelectrical cooler. No flicker noise The devices are optimized for the maximum performance at λ opt. Highest performance Convenient to use and stability are achieved by application of variable gap HgCdTe semiconductor, ide dynamic range optimized doping and sophisticated surface processing. Custom devices with quadrant Compact, rugged and reliable cells, multielement arrays, different windows, lenses and optical filters are available Low cost upon request. Prompt delivery Standard detectors are available in T packages with wznsear windows. ther Custom design upon request packages, windows and connectors are also available. IR Detector C Parameter ptimal avelength*) λopt Current Responsivity idth mm Time Constant Resistance perating Temperature Acceptance Angle, F/# *) **) λopt Unit µm PVMI-TE- PVMI-TE D* cm Hz to to 0 Ri w τ R T Φ, - A mm ns Ω K deg, - ~0,. ther ptimal avelengths available upon request. Data Sheet states minimum guaranteed D* values for each detector model. Higher performance detectors can be provided upon request. Type ptical Area [mm mm] PVMI-TE- PVMI-TE-0. standard detectors detectors available upon request, parameters may vary from these in Data Sheet

40 μm IR PHTVLTAIC MULTIPLE JUNCTIN DETECTRS THERMELECTRICALLY CLED PTICALLY IMMERSED PVMI-TE Series Example of D* vs avelength λ for PVMI-TE Series HgCdTe Detectors. Spectral Characteristics of individual detectors may vary from those shown on the chart. Features Description High performance in the long wavelengths range without The PVMI-TE-λopt photodetectors series (λopt - optimal wavelength in micrometers) LN cooling feature IR multiple junction optically immersed photovoltaic detectors on three-stage Fast response thermoelectrical cooler. No flicker noise The devices are optimized for the maximum performance at λ opt. Highest performance Convenient to use and stability are achieved by application of variable gap HgCdTe semiconductor, ide dynamic range optimized doping and sophisticated surface processing. Custom devices with quadrant Compact, rugged and reliable cells, multielement arrays, different windows, lenses and optical filters are available Low cost upon request. Prompt delivery Standard detectors are available in T packages with wznsear windows. ther Custom design upon request packages, windows and connectors are also available. IR Detector C Parameter ptimal avelength*) λopt Current Responsivity idth mm Time Constant Resistance perating Temperature Acceptance Angle, F/# *) **) λopt Unit µm PVMI-TE- PVMI-TE D* cm Hz to to 00 Ri w τ R T Φ, - A mm ns Ω K deg, - ~0,. ther ptimal avelengths available upon request. Data Sheet states minimum guaranteed D* values for each detector model. Higher performance detectors can be provided upon request. Type ptical Area [mm mm] PVMI-TE- PVMI-TE-0. standard detectors detectors available upon request, parameters may vary from these in Data Sheet 0

41 μm IR PHTVLTAIC MULTIPLE JUNCTIN DETECTRS THERMELECTRICALLY CLED PTICALLY IMMERSED PVMI-TE Series Example of D* vs avelength λ for PVMI-TE Series HgCdTe Detectors. Spectral Characteristics of individual detectors may vary from those shown on the chart. Features Description High performance in the long wavelengths range without The PVMI-TE-λopt photodetectors series (λopt - optimal wavelength in micrometers) LN cooling feature IR multiple junction optically immersed photovoltaic detectors on four-stage Fast response thermoelectrical cooler. No flicker noise The devices are optimized for the maximum performance at λ opt. Highest performance Convenient to use and stability are achieved by application of variable gap HgCdTe semiconductor, ide dynamic range optimized doping and sophisticated surface processing. Custom devices with quadrant Compact, rugged and reliable cells, multielement arrays, different windows, lenses and optical filters are available Low cost upon request. Prompt delivery Standard detectors are available in T packages with wznsear windows. ther Custom design upon request packages, windows and connectors are also available. IR Detector C Parameter ptimal avelength*) λopt Current Responsivity idth mm Time Constant Resistance perating Temperature Acceptance Angle, F/# *) **) λopt Unit µm PVMI-TE- PVMI-TE D* cm Hz to 00 0 to 00 Ri w τ R T Φ, - A mm ns Ω K deg, - ~,. ther ptimal avelengths available upon request. Data Sheet states minimum guaranteed D* values for each detector model. Higher performance detectors can be provided upon request. Type ptical Area [mm mm] PVMI-TE- PVMI-TE-0. standard detectors detectors available upon request, parameters may vary from these in Data Sheet

42 INFRARED DETECTRS ACCESSRIES

43 VIP FIP BIP MIP PIP SIP QIP standalone fast EM STANDARD large slow / medium fast / option 7 medium medium / on request medium medium / on request STANDARD programmable medium medium / ultra small four channel small medium / option medium medium / option 7 Preamplifier Series Application Size Speed Integrated Detector Cooled / Uncooled Detector channel Tuned Gain Programmable Gain Programmable Bandwidth Additonal DC utput Page TEC Controllers STCC-0 MTCC-0 PTCC-0 Power Supplies PPS-0 PPS-0 MPPS-0 Cables BNC-BNC SMA-BNC SMA-SMA MMC-BNC MMC-SMA MC-BNC MC-SMA AMPx-DB AMPx-DUBx AMPx-AMPx LEM-DB LEM-DUBx LEM-AMP AMPx-MIC AMPx-PER DB-DB DB-mmPLUGS DB-MIC AMPx-MIC KK-PER USB:TypeA-MicroB Power Cable EU Power Cable UK Power Cable US AC Adaptors AC Adaptor Mechanical Accessories DRB- DRB- MP PH BP STA-x- MHS- MHS- MHS- DH-BNC- DH-BNC- EL-

44 VIP Series STANDALNE PREAMPLIFIER Features Compact size High signal-to-noise ratio Bandwidth up to 0 MHz Dedicated to operate with uncooled detector in BNC package Custom configurations upon request Additional accessories available Applications Description VIP is the transimpedance, AC or DC coupled, standalone preamplifier. It is dedicated for operation with uncooled, no biasing IR detectors in BNC packages. Contactless temperature measurement Laser radiation detection Gas analysis Fourier spectroscopy Fire, flame and human body detection Pyrometers, scanners Nondestructive material testing Preamplifier Specification Parameter Unit nv Hz pa Hz Typical Value Conditions, Remarks 0.7.0) fo = 00 khz) 0.0.) fo = 00 khz) DC coupling set AC coupling set Input Noise Voltage Density en Input Noise Current Density in Low Cut-ff Frequency flo Hz DC 0 to 0k High Cut-ff Frequency fhi Hz 00k to 0M Transimpedance Ki V A up to 0 utput Impedance Rout Ω utput Voltage Swing Vout V utput Voltage ffset Voff mv 0 DC and AC coupling set Power Supply Voltage Vsup V ± ± fhi MHz MHz < fhi 0 MHz Power Supply Current Dimensions eight Isup ma ± - mm mm mm g 0 0 ±0 ± ± fhi MHz, RL = MΩ) MHz < fhi 0 MHz, RL = MΩ) 0 MHz < fhi 0 MHz, RL = 0 Ω) width depth height Electrical Ta = 0 C. ) ) ) The preamplifier noise may significantly reduce the system performance in some situations. This happens for large capacitance detectors operating at high frequencies. f0 noise measurement frequency RL load resistance

45 VIP Series The preamplifier can be integrated with following types IR detectors: Preamplifier Code Description VIP-flo-fhi-P P supply connector: S standard H pigtail cable fhi high cut-off frequency in Hz: 00k, 00k, M, M, 0M, 0M flo low cut-off frequency in Hz: Detector Type Description PV photovoltaic PVI photovoltaic, optically immersed PVM multiple heterojunction photovoltaic PVMI multiple heterojunction photovoltaic, optically immersed DC, 0, 00, k, 0k VIP preamplifier series Schematic Diagram V Version, I Current Input, P Preamplifier Supply Regulator Transimpedance Preamplifier From Detector Unit Power Supply Connector EMI Filters DB Supply Connector Voltage Amplifier BNC utput Connector DB Connector Male Pin Number Function N.C. not connected N.C. not connected GND power ground N.C. not connected N.C. not connected Vsup power supply input ( ) 7 N.C. not connected N.C. not connected +Vsup power supply input (+) 7 Physical Dimensions [mm] VIG System S.A. / Poznanska St. 0-0 zarow Mazowiecki, Poland, tel.: + 7 0, fax: + 7, info@vigo.com.pl

46 VIP Series Recommended Accessories PPS-0 PPS-0 MPPS-0 BNC-BNC Preamplifier Power Supply Preamplifier Power Supply DB-mmPLUGS DB-MIC AC Adaptor Power Cable EU Power Cable UK Preamplifier Supply Cable Preamplifier Supply Cable Power Supply Adaptor Power Cable Power Cable Power Cable US DRB- DRB- MP PH Power Cable Base Mounting System Base Mounting System Mounting Post Post Holder STA-x- DH-BNC- Special Thread Adapter Detector's Holder Preamplifier Power Supply Signal Input or utput Cable DB-DB Preamplifier Supply Cable VIG System S.A. / Poznanska St. 0-0 zarow Mazowiecki, Poland, tel.: + 7 0, fax: + 7, info@vigo.com.pl

47 FIP Series FAST PREAMPLIFIER Features Compact size ide bandwidth up to GHz Precise I-V conversion Detector biasing possibility up to +00 mv Low current noise Co-operation with high-resistance detectors Effective cooling up to -stage TE coolers Applications Description Laser technology Fast laser pulse measurements Telemetry Sighting systems Free space optics FIP is the high speed transimpedance, AC coupled preamplifier. It is dedicated for high speed infrared measurements. FIP preamplifier is designed for operation with either biased or nonbiased TE cooled detectors. Preamplifier Specification Parameter Unit nv Hz pa Hz Typical Value Conditions, Remarks.) fo = 00 khz) ) fo = 00 khz) Input Noise Voltage Density en Input Noise Current Density in Low Cut-ff Frequency flo Hz k, 0k db High Cut-ff Frequency fhi Hz G db Transimpedance Ki V A. 0 utput Impedance Rout Ω 0 utput Voltage Swing Vout V ±0. RL = 0 Ω) Power Supply Voltage Vsup V Power Supply Current Isup ma no detector biasing Dimensions - mm mm mm width depth height - with TE width depth height - with TE width depth height - with TE Electrical Ta = 0 C. ) ) ) The preamplifier noise may significantly reduce the system performance in some situations. This happens for large capacitance detectors operating at high frequencies. f0 noise measurement frequency RL load resistance 7

48 FIP Series Preamplifier Code Description The preamplifier can be integrated with following types IR detectors: FIP-flo-fhi-P-P-P P additional DC output: D with output ND no DC output P mounting hole: M M mounting hole M Mx mounting hole P package: Detector Type Description PC-TE, PC-TE, PC-TE photoconductive PCI, PCI-TE, PCI-TE, PCI-TE photoconductive, optically immersed PV-TE, PV-TE, PV-TE photovoltaic PVI-TE, PVI-TE, PVI-TE photovoltaic, optically immersed PVM-TE, PVM-TE, PVM-TE multiple heterojunction photovoltaic PVMI-TE, PVMI-TE, PVMI-TE multiple heterojunction photovoltaic, optically immersed F with fan fhi high cut-off frequency in Hz: G flo low cut-off frequency in Hz: available options: k,0k FIP preamplifier series -TE, -TE, -TE means, or -stage TEC integrated with detector. F Version, I Current Input, P Preamplifier Schematic Diagram Detector Biasing) Supply Regulator Thermistor) IR Sensitive Area Configuration Memory DATA Voltage Amplifier SMA utput Connector Transimpedance Preamplifier Detector Unit LEM Supply & Control Connector EMI Filters TE-Cooler) ) ) Power Supply and TEC Control Connector Pin number Function FAN+ FAN (+) TH thermistor output () TEC TEC supply input ( ) Vsup power supply input ( ) GND power ground +Vsup power supply input (+) 7 TEC+ TEC supply input (+) TH thermistor output () DATA data pin, nly for TE-cooled detectors nly for biased detectors LEM Connector Female 7

49 FIP Series Physical Dimensions [mm]

50 FIP Series Recommended Accessories PTCC-0-EM PTCC-0-BAS PTCC-0-ADV Programmable Smart TEC Programmable Smart TEC Programmable Smart TEC Controller EM Controller Basic Controller Advanced STCC-0 MTCC-0 Standard TEC Controller Miniature TEC Controller MPPS-0 SMA-BNC SMA-SMA LEM-DB LEM-DUBx Preamplifier Power Supply Signal utput Cable Signal utput Cable TEC and Supply Cable TEC and Supply Cable LEM-AMPx AMPx-MIC AMPx-PER KK-PER USB: TypeA-MicroB TEC and Supply Cable Power Supply Cable Power Supply Cable Power Supply Cable Cable for PC Connection AC Adaptor Power Cable EU Power Cable UK Power Cable US DRB- Power Supply Adaptor Power Cable Power Cable Power Cable Base Mounting System DRB- MP PH STA-x- Base Mounting System Mounting Post Post Holder Special Thread Adapter 0

51 BIP Series EM PREAMPLIFIER Features Compact size High signal-to-noise ratio Bandwidth up to 0 MHz Dedicated to operate with -, - and -stage TE cooled detectors Custom modifications upon request Additional accessories available Applications Description Contactless temperature measurement Free space optical communication Laser radiation detection Gas analysis Fourier spectroscopy Fire, flame and human body detection Pyrometers, scanners Nondestructive material testing EM applications BIP is the transimpedance, AC or DC coupled preamplifier. It is dedicated for EM applications and requires external heat sink (see Recommended Accessories). BIP preamplifier is designed for operation with either biased or non-biased TE cooled detectors. Preamplifier Specification Parameter Input Noise Voltage Density en Input Noise Current Density in Low Cut-ff Frequency flo High Cut-ff Frequency Unit Typical Value Conditions, Remarks 0.7.0) fo = 0 khz) 0.0.) fo = 0 khz) Hz DC 0 to 0k DC coupling set AC coupling set fhi Hz 00k to 0M Transimpedance Ki V A up to 0 utput Impedance Rout Ω utput Voltage Swing Vout V utput Voltage ffset Voff mv max ±0) Power Supply Voltage Vsup V ± ± Power Supply Current Dimensions Isup ma max ±0 no detector biasing - mm mm mm 0. width depth height - with TE, TE, TE nv Hz pa Hz 0 ±0 ± ± fhi MHz, RL = MΩ) MHz < fhi 0 MHz, RL = MΩ) 0 MHz < fhi 0 MHz, RL = 0 Ω) fhi MHz fhi > MHz Electrical Ta = 0 C. ) The preamplifier noise may significantly reduce the system performance in some situations. This happens for large capacitance detectors operating at high frequencies. f0 noise measurement frequency RL load resistance ) Measured with equivalent resistor at the input instead of the detector. It's to avoid the environmental thermal radiation's impact. ) )

52 BIP Series Preamplifier Code Description The preamplifier can be integrated with following types IR detectors: BIP-flo-fhi fhi high cut-off frequency in Hz: 00k, 00k, M, M, 0M, 0M, 0M, 00M, 0M flo low cut-off frequency in Hz: DC, 0, 00, k, 0k BIP preamplifier series: B- Version, I Current Input, P Preamplifier Detector Type Description PC-TE, PC-TE, PC-TE photoconductive PCI-TE, PCI-TE, PCI-TE photoconductive, optically immersed PV-TE, PV-TE, PV-TE photovoltaic PVI-TE, PVI-TE, PVI-TE photovoltaic, optically immersed PVM-TE, PVM-TE, PVM-TE multiple heterojunction photovoltaic PVMI-TE, PVMI-TE, PVMI-TE multiple heterojunction photovoltaic, optically immersed -TE, -TE, -TE means, or -stage TEC integrated with detector. Schematic Diagram Detector Biasing) Supply Regulator Thermistor) IR Sensitive Area Transimpedance Preamplifier Detector Unit AMPx Supply & Control Connector EMI Filters Configuration Memory DATA Voltage Amplifier SMAutput Connector TE-Cooler) ) ) Power Supply and TEC Control Connector Pin Number Function Vsup power supply input ( ) TH thermistor output () DATA data pin TEC TEC supply input ( ) GND power ground TH thermistor output () 7 +Vsup power supply input (+) TEC+ TEC supply input (+), nly for TE-cooled detectors nly for biased detectors AMPx Connector Male 7

53 BIP Series Physical Dimensions [mm]

54 BIP Series Recommended Accessories PTCC-0-EM PTCC-0-BAS PTCC-0-ADV Programmable Smart TEC Programmable Smart TEC Programmable Smart TEC Controller EM Controller Basic Controller Advanced STCC-0 MTCC-0 Standard TEC Controller Miniature TEC Controller MPPS-0 SMA-BNC SMA-SMA AMPx-DB AMPx-DUBx Preamplifier Power Supply Signal utput Cable Signal utput Cable TEC and Supply Cable TEC and Supply Cable AMPx-AMPx AMPx-MIC AMPx-PER KK-PER USB: TypeA-MicroB TEC and Supply Cable Power Supply Cable Power Supply Cable Power Supply Cable Cable for PC Connection AC Adaptor Power Cable EU Power Cable UK Power Cable US MHS- Power Supply Adaptor Power Cable Power Cable Power Cable Additional Heat Sink

55 MIP Series MEDIUM SIZE PREAMPLIFIER Features Compact size High signal-to-noise ratio Bandwidth up to 0 MHz Dedicated for operation with -, - and -stage TE cooled detectors Custom configuration upon request Additional accessories available Applications Contactless temperature measurement Free space optical communication Laser radiation detection Gas analysis Fourier spectroscopy Fire, flame and human body detection Pyrometers, scanners Nondestructive material testing EM applications Description MIP is the transimpedance, AC or DC coupled preamplifier. It is dedicated for BenchTop applications. Package type F is equipped with fan and does not require additonal heat sink. Pacakage type NF requires additional heat dissipation (provided by user). MIP preamplifier is designed for operation with either biased or nonbiased cooled detectors. Preamplifier Specification Parameter Unit nv Hz pa Hz Typical Value Conditions, Remarks Input Noise Voltage Density en Input Noise Current Density in Low Cut-ff Frequency flo Hz High Cut-ff Frequency fhi Hz Transimpedance Ki V A utput Impedance Rout Ω utput Voltage Swing Vout V utput Voltage ffset Voff mv max ±0) Power Supply Voltage Vsup V ± ± fhi MHz fhi > MHz Power Supply Current Isup ma Dimensions - mm mm mm max ± no detector biasing width depth height - with TE width depth height - with TE MIP package F width depth height - with TE width depth height - with TE width depth height - with TE MIP package NF width depth height - with TE ) fo = 0 khz) 0.0.) fo = 0 khz) DC 0 to 0k 00k to 0M DC coupling set AC coupling set up to 0 0 ±0 ± ± fhi MHz, RL = MΩ) MHz < fhi 0 MHz, RL = MΩ) 0 MHz < fhi 0 MHz, RL = 0 Ω) Electrical Ta = 0 ºC. ) The preamplifier noise may significantly reduce the system performance in some situations.this happens for large capacitance detectors operating at high frequencies. f0 noise measurement frequency ) RL load resistance ) Measured with equivalent resistor at the input instead of the detector. It's to avoid the environmental thermal radiation's impact. )

56 MIP Series Preamplifier Code Description The preamplifier can be integrated with following types IR detectors: MIP-flo-fhi-P-P P mounting hole: M M mounting hole M Mx mounting hole P package: F with fan NF without fan fhi high cut-off frequency in Hz: 00k, 00k, M, M, 0M, 0M, 0M, 00M, 0M flo Detector Type Description PC-TE, PC-TE, PC-TE photoconductive PCI-TE, PCI-TE, PCI-TE photoconductive, optically immersed PV-TE, PV-TE, PV-TE photovoltaic PVI-TE, PVI-TE, PVI-TE photovoltaic, optically immersed PVM-TE, PVM-TE, PVM-TE multiple heterojunction photovoltaic PVMI-TE, PVMI-TE, PVMI-TE multiple heterojunction photovoltaic, optically immersed low cut-off frequency in Hz: DC, 0, 00, k, 0k MIP preamplifier series M Version, I Current Input, P Preamplifier -TE, -TE, -TE means -, - or -stage TEC integrated with detector. Schematic Diagram Detector Biasing) Supply Regulator Thermistor) IR Sensitive Area DATA Voltage Amplifier SMA utput Connector TE-Cooler) ) ) Power Supply and TEC Control Connector *) Configuration Memory Transimpedance Preamplifier Detector Unit LEM Supply & Control Connector EMI Filters Pin Number Function *) FAN+/GND FAN (+)/power ground TH thermistor output () TEC TEC supply input ( ) Vsup power supply input ( ) GND power ground +Vsup power supply input (+) 7 TEC+ TEC supply input (+) TH thermistor output () DATA data pin, nly for TE-cooled detectors nly for biased detectors LEM Connector Female 7 GND for MIP with package NF.

57 MIP Series Physical Dimensions [mm] MIP package F MIP package NF 7

58 MIP Series Recommended Accessories PTCC-0-EM PTCC-0-BAS PTCC-0-ADV Programmable Smart TEC Programmable Smart TEC Programmable Smart TEC Controller EM Controler Basic Controler Advanced STCC-0 MTCC-0 Standard TEC Controller Miniature TEC Controller MPPS-0 SMA-BNC SMA-SMA LEM-DB LEM-DUBx Preamplifier Power Supply Signal utput Cable Signal utput Cable TEC and Supply Cable TEC and Supply Cable LEM-AMPx AMPx-MIC AMPx-PER KK-PER USB: TypeA-MicroB TEC and Supply Cable Power Supply Cable Power Supply Cable Power Supply Cable Cable for PC Connection AC Adaptor Power Cable EU Power Cable UK Power Cable US EL- Power Supply Adaptor Power Cable Power Cable Power Cable Accessory Lens with Mount DRB- DRB- MP PH STA-x- Base Mounting System Base Mounting System Mounting Post Post Holder Special Thread Adapter

59 PIP Series PRGRAMMABLE SMART PREAMPLIFIER Features Compact size High signal-to-noise ratio Dedicated for operation with -, - and -stage TE cooled or uncooled detectors Parameters settable by the user: output voltage offset gain (in 0 db range) bandwidth: 0 khz,. MHz, 0 MHz. MHz, MHz, 00 MHz coupling AC/DC detector parameters (in some cases, with limitation) Programmable modules and programmable controllers are interchangeable Highly flexible configuration allows the user to adapt the module to variety of system parameters Additional accessories available Applications Example Assembling (see: Recommended Accessories) Contactless temperature measurement Free space optical communication Laser radiation detection Gas analysis Fourier spectroscopy Fire, flame and human body detection Pyrometers, scanners Nondestructive material testing EM applications Preamplifier Specification Parameter Input Noise Voltage Density en Input Noise Current Density in Low Cut-ff Frequency Unit Typical Value Conditions, Remarks 0. fo = 0 khz) Hz.) 7.0) first stage transimpedance = kω first stage transimpedance = kω flo Hz DC/k user configurable by software High Cut-ff Frequency fhi Hz 0k/.M/0M).M/M/00M) maximum values, with limited range of detector with in circuit filter activated Transimpedance Ki V A 0 k.k k first stage transimpedace = kω first stage transimpedace = kω utput Impedance utput Voltage Swing Rout Ω 0 Vout V ± with 0 Ω load applied max ±) max ±0 DC coupling set AC coupling set nv Hz pa utput Voltage ffset Voff mv Power Supply Voltage Vsup V ± Power Supply Current Isup ma Dimensions - mm mm mm peration Tempearture Storage Temperature Relative Humidity T C typ ±0 max ± C % width depth height - with TE width depth height - with TE width depth height - with TE Electrical Ta=0 C. ) The preamplifier noise may significantly reduce the system performance in some situations. This happens for large capacitance detectors operating at high frequencies. f0 noise measurement frequency Depending on preamplifier option. ) Measured with equivalent resistor at the input instead of the detector. It's to avoid the environmental thermal radiation's impact. ) )

60 PIP Series Description peration PIP is the programmable smart preamplifier. Due to the modern internal configuration, it offers extreme flexibility combined with superior signal parameters and high reliability. Included voltage monitor allows user to check the working conditions (supply voltages, detector bias voltage, first and last stage output voltage offset etc.) User may also immediately change the gain, coupling (AC/DC), optimize the first stage transimpedance (in terms of input noise and overall bandwidth), reduce the bandwidth down to. MHz (for supressing wideband noise and convenient weak signal observation), and also manually or automatically supress the voltage offset. The optimized parameters are immediately stored into the internal EEPRM memory and automatically loaded after the power is on. Reset to the factory settings is always available, and following the manual, the operation and manipulation is both: easy and safe. In some cases, detector biasing condition may be adjusted, however, for detector safety this function is blocked in factory by default. After turning on the controller, blinking LEDs, or splash screen are shown (depending on the version). The PTCC-0 controller probes the version of IR module, and when PIP is found, the content of its internal memory is downloaded, and following the data, proper working conditions are set: detector temperature, module supply voltage and above mentioned preamplifier parameters. From the user point of view: PTCC-0 informs of cooling down the detector indicated by blinking green LCK LED, and when the valid temperature is reached, module supply is switched on and the IR detecting set is ready to operate. The intelligent controller and intelligent module together constantly probe the working conditions and, if any potential risk is recognized (overloading the supply or TEC lines, overheating the module, opening up the temperature stabilization loop etc.) the module is being shut down, and ERRR LED is on. For controlling the preamplifier parameters or performing a firmware update, please use the PC software. Parameters may be controlled by using PTCC-0-ADV no PC is then necessary. ARNING! For proper operation, PIP preamplifier integrated with IR detector should be connected to the PTCC-0 controller. The preamplifier can be integrated with following types IR detectors: Preamplifier Code Description PIP-flo-fhi-P-P P mounting hole: M M mounting hole M Mx mounting hole P package: F with fan fhi high cut-off frequency in Hz: 0M, 00M flo low cut-off frequency in Hz: DC/k (user configurable by software) Detector Type Description PC, PC-TE, PC-TE, PC-TE photoconductive PCI, PCI-TE, PCI-TE, PCI-TE photoconductive, optically immersed PV, PV-TE, PV-TE, PV-TE photovoltaic PVI, PVI-TE, PVI-TE, PVI-TE photovoltaic, optically immersed PVM, PVM-TE, PVM-TE, PVM-TE multiple heterojunction photovoltaic PIP preamplifier series P Programmable, I Current Input, PVMI, PVMI-TE, PVMI-TE, PVMI-TE P Preamplifier multiple heterojunction photovoltaic, optically immersed -TE, -TE, -TE means -, - or -stage TEC integrated with detector. No TE mark informs that the detector is not TE cooled. Schematic Diagram Thermistor) Supply Regulator Detector Biasing) IR Sensitive Area LEM Supply & Control Connector DATA Voltage Amplifier SMA utput Connector Microcontroller CPU Transimpedance Preamplifier Detector Unit EMI Filters TE-Cooler) ) ), nly for TE-cooled detectors nly for biased detectors 0

61 PIP Series Power Supply and TEC Control Connector Pin Number FAN+ FAN (+) TH thermistor output () TEC TEC supply input ( ) Vsup power supply input ( ) GND power ground +Vsup power supply input (+) 7 TEC+ TEC supply input (+) TH thermistor output () DATA data pin LEM Connector Female Function 7 Physical Dimensions [mm]

62 PIP Series Recommended Accessories PTCC-0-EM PTCC-0-BAS PTCC-0-ADV Programmable Smart TEC Programmable Smart TEC Programmable Smart TEC Controller EM Controller Basic Controller Advanced SMA-BNC SMA-SMA Signal utput Cable Signal utput Cable LEM-DB LEM-DUBx KK-PER USB: TypeA-MicroB AC Adaptor TEC and Supply Cable TEC and Supply Cable Power Supply Cable Cable for PC Connection Power Supply Adaptor DRB- DRB- MP PH STA-x- Base Mounting System Base Mounting System Mounting Post Post Holder Special Thread Adapter

63 SIP Series ULTRA SMALL PREAMPLIFIER Features SIP package T Very small size High signal-to-noise ratio Bandwidth up to 0 MHz Dedicated for opration with -, - and -stage TE cooled or uncooled detectors Biased and non-biased detector compatible Adjustable gain (for bandwidth up to 00 MHz) Fully protected against exceeding supply voltage and reversing power supply polarity Custom modifications upon request Additional accessories available SIP package T Description Applications SIP is the ultra small transimpedance, AC or DC coupled preamplifier. It is dedicated for EM applications and requires external heat sink (see Recommended Accessories). SIP is designed for operation with either biased or non-biased and either cooled or uncooled detectors. Contactless temperature measurement Free space optical communication Laser radiation detection Gas analysis Fourier spectroscopy Fire, flame and human body detection Pyrometers, scanners Nondestructive material testing EM applications Preamplifier Specification Parameter Input Noise Voltage Density en Input Noise Current Density in Low Cut-ff Frequency flo High Cut-ff Frequency Typical Value Conditions, Remarks 0.7.0) fo = 0 khz) 0.0.) fo = 0 khz) Hz DC 0 to 0k DC coupling set AC coupling set fhi Hz 00k to 0M Transimpedance Ki V A up to 0 Transimpedance Range K i max Ki min - up to dependent on the high cut-off frequency Rout Ω utput Voltage Swing Vout V 0 ±0 ± fhi MHz, RL = MΩ) MHz < fhi 0 MHz, RL = 0 Ω) utput Voltage ffset Voff mv max ±0) Power Supply Voltage Vsup V ± ± Power Supply Current Isup ma Dimensions - mm mm mm utput Impedance Unit nv Hz pa Hz max ± fhi MHz MHz < fhi 0 MHz no detector biasing width depth height SIP package T width depth height with TE, TE, TE Electrical Ta = 0 C. ) The preamplifier noise may significantly reduce the system performance in some situations. This happens for large capacitance detectors operating at high frequencies. f0 noise measurement frequency RL load resistance ) Measured with equivalent resistor at the input instead of the detector. It's to avoid the environmental thermal radiation's impact. ) )

64 SIP Series The preamplifier can be integrated with following types IR detectors: Preamplifier Code Description SIP-flo-fhi-P-P P gain adjustment: G with gain adjustment*) NG no gain adjustment P package: f f Detector Type Description PC, PC-TE, PC-TE, PC-TE photoconductive PCI, PCI-TE, PCI-TE, PCI-TE photoconductive, optically immersed T for detectors with T package PV, PV-TE, PV-TE, PV-TE photovoltaic T for detectors with T package PVI, PVI-TE, PVI-TE, photovoltaic, optically immersed hi high cut-off frequency in Hz: PVI-TE 00k, 00k, PVM, PVM-TE, PVM-TE, M, M, 0M, 0M, 0M, 00M, 0M multiple heterojunction photovoltaic PVM-TE low cut-off frequency in Hz: lo PVMI, PVMI-TE, PVMI-TE, multiple heterojunction DC, 0, 00, k, 0k PVMI-TE photovoltaic, optically immersed preamplifier series -TE, -TE, -TE means -, - or -stage TEC integrated with detector. S Version, I Current Input, P Preamplifier SIP *) Available only for fhi to 00M. Schematic Diagram Detector Biasing) Supply Regulator Thermistor) IR Sensitive Area Transimpedance Preamplifier Detector Unit Configuration Memory DATA Voltage Amplifier MMC utput Connector TE-Cooler) ) ) Power Supply and TEC Control Connector *) AMPx Supply & Control Connector EMI Filters Pin Number Function Vsup power supply input ( ) *) TH/N.C. thermistor output/not connected **) DATA/GND data pin/power ground *) TEC /N.C. TEC supply input ( )/not connected GND power ground *) TH/N.C. thermistor output/not connected 7 +Vsup power supply input (+) *) TEC+/N.C. TEC supply input (+)/not connected, nly for TE-cooled detectors nly for biased detectors AMPx Connector Male 7 N.C for SIP-flo-fhi-T. **) GND for SIP-flo-fhi-T.

65 SIP Series Physical Dimensions [mm] SIP packaget SIP package T

66 SIP Series Recommended Accessories PTCC-0-EM PTTC-0-BAS PTCC-0-ADV Programmable Smart TEC Programmable Smart TEC Programmable Smart TEC Controller EM Controller Basic Controller Advanced STCC-0 MTCC-0 Standard TEC Controller Miniature TEC Controller MPPS-0 PPS-0 PPS-0 MMC-BNC MMC-SMA Preamplifier Power Supply Preamplifier Power Supply Preamplifier Power Supply Signal utput Cable Signal utput Cable AMPx-DB AMPx-DUBx AMPx-AMPx AMPx-MIC AMPx-MIC TEC and Supply Cable TEC and Supply Cable TEC and Supply Cable Power Supply Cable Power Supply Cable AMPx-PER KK-PER USB: TypeA-MicroB AC Adaptor Power Cable EU Power Supply Cable Power Supply Cable Cable for PC Connection Power Supply Adaptor Power Cable Power Cable UK Power Cable US MHS- Power Cable Power Cable Additional Heat Sink

67 QIP Series FUR CHANNEL PREAMPLIFIER Features Very small size High signal-to-noise ratio Bandwidth up to 00 MHz Dedicated for operation with uncooled, quadrant geometry detectors Fully protected against exceeding supply voltage and reversing power supply polarity Custom configurations upon request Additional accessories available Applications Laser beam positioning Description Example Assembling (see: Recommended Accessories) QIP is the four channel, transimpedance, AC or DC coupled preamplifier. It is dedicated for BenchTop or EM applications and, in some cases, requires external heat sink (see Recommended Accessories). QIP is designed to work with either biased or non-biased, uncooled, quadrant geometry detectors. Preamplifier Specification Parameter Unit nv Hz pa Hz Typical Value Conditions, Remarks 0.7.0) fo = 0 khz) 0.0.) fo = 0 khz) DC coupling set AC coupling set Input Noise Voltage Density en Input Noise Current Density in Low Cut-ff Frequency flo Hz DC k, 0k High Cut-ff Frequency fhi Hz 00k to 00M Transimpedance Ki V A up to 0 utput Impedance Rout Ω 0 utput Voltage Swing Vout V ± utput Voltage ffset Voff mv max ±0) Power Supply Voltage Vsup V ± Power Supply Current Isup ma max ±0 no detector biasing Dimensions - mm mm mm 0. 0 width depth height Electrical Ta = 0 C. ) The preamplifier noise may significantly reduce the system performance in some situations. This happens for large capacitance detectors operating at high frequencies. f0 noise measurement frequency RL load resistance ) Measured with equivalent resistor at the input instead of the detector. It's to avoid the environmental thermal radiation's impact. ) ) 7

68 QIP Series The preamplifier can be integrated with following types IR detectors: Preamplifier Code Description QIP-flo-fhi-P Detector Type P mounting hole: PCQ M M mounting hole M Mx mounting hole fhi high cut-off frequency in Hz: quadrant photoconductive PVMQ *) Description *) quadrant multiple heterojunction photovoltaic ptical area xmm and xmm. 00k, 00k, M, M, 0M, 0M, 0M, 00M flo low cut-off frequency in Hz: DC, k, 0k QIP preamplifier series Q Quadrant, I Current Input, P Preamplifier Schematic Diagram Detector Biasing*) IR Sensitive Area Supply Regulator Transimpedance Preamplifier EMI Filters AMPx Supply Connector Voltage Amplifier Four MC utput Connectors Detector Unit *) Power Supply Connector Pin Number nly for biased detectors AMPx Connector Male Function Vsup power supply input ( ) N.C. not connected GND power ground N.C. not connected GND power ground N.C not connected 7 +Vsup power supply input (+) N.C. not connected 7

69 QIP Series Physical Dimensions [mm]

70 QIP Series Recommended Accessories MPPS-0 PPS-0 PPS-0 MC-BNC MC-SMA Preamplifier Power Supply Preamplifier Power Supply Preamplifier Power Supply Signal utput Cable Signal utput Cable AMPx-MIC AMPx-DB AC Adaptor Power Cable EU Power Cable UK Power Supply Cable Power Supply Cable Power Supply Adaptor Power Cable Power Cable Power Cable US DRB- DRB- MP PH Power Cable Base Mounting System Base Mounting System Mounting Post Post Holder STA-x- Special Thread Adapter 70

71 STCC-0 Series STANDARD TEC CNTRLLER Description The STCC-0 is a standard thermoelectric cooler controller with ±0.0 ºC stability. The unit provides low noise power supply for integrated preamplifiers. Features Provides proper detector cooling Preamplifier power supply included Temperature lock indicator TEC Controller Specification Parameter Unit Temperature Stability K Detector Temperature Settling Time s Maximum Voltage Across TEC Element Ripple of utput Current utput Current of the Built-In Power Supply Power Supply Voltage Vsup Power Supply Current Isup Series Resistance of the Connecting Cable Dimensions eight Value Min Typ ± V % 0. ma ±00.. V.. ma A A mω 000 mm mm mm kg Conditions, Remarks Max Tdet = K (-0 C) Tdet = K (-0 C), ΔTdet = 0. C Tdet = K (-0 C), ΔTdet = 0. C Tdet = K (-0 C), ΔTdet = 0. C STCC-0-P--P-P STCC-0-P--P-P STCC-0-P--P-P ITEC = A STCC-0-0-P-P-P STCC-0--P-P-P STCC-0-P--P-P, STCC-0-P--P-P STCC-0-P--P-P STCC-0-P--P-P, STCC-0-P--P-P STCC-0-P--P-P total resistance of the wires supplying TEC element width height depth STCC-0-00-P-P-P remaining models Electrical Ta = 0 C. TEC Controller Code Description STCC-0-P-P-P-P P temperature of IR detector: P 7 K, + C 0 K, -0 C 0 K, -0 C 0 K, -0 C P type of thermistor: C NCP0ME0RL (standard) B BRKAJ-A (only for certain types of IR detectors) A TB0- (only for certain types of IR detectors) P type of TE cooler: two - stage three - stage four - stage P preamplifier power supply: 00 no power supply 0 power supply ± V power supply ± V G combined power supply (+ V, - V) for FIP preamplifier STCC-0 cooler controller series S Standard, T Thermoelectric, C Cooler, C Controller, ver 0 7

72 STCC-0 Series Physical Dimensions [mm] Power Supply and Control Connector DB Connector Female Pin Number Function TEC+ TEC supply output (+) TEC TEC supply output ( ) GND power ground TH thermistor input () TH thermistor input () Vsup power supply output ( ) 7 FAN+/GND FAN (+)/power ground N.C. not connected +Vsup power supply output (+) 7 Recommended Accessories AC Adaptor LEM-DB AMPx-DB DB-DB Power Supply Adaptor TEC and Supply Cable TEC and Supply Cable Supply Cable 7

73 MTCC-0 Series MINIATURE TEC CNTRLLER Description The MTCC-0 miniature TEC controller is designed to control temperature of - or -stage TE cooled IR detectors. MTCC-0 can be used with the Integrated Detector/Preamplifier Module BIP, MIP, SIP and FIP series. The target temperature is factory adjusted in range of 0 to K. Features Applications Compact size Temperature control of TE Low cost cooled IR detectors Easy to use EM applications High stability Low power consumption Low noise, due to the linear regulation based on output stage ARNING! The TEC controller is paired in the factory with the detector delivered in the IR set. Swapping controllers may cause malfunction or damage of TEC and detector. TEC Controller Specification Parameter Temperature Stability Settling Time of the Set Detector Temperature Power Supply Voltage Vsup Unit Typical Value K ±0.0 Maximum TEC utput Current ITEC Maximum TEC utput Voltage VTEC Dimensions eight A 0 0. to..0 to s V V mm mm mm g Conditions, Remarks MTCC-0-TE, Tdet = K (-0 C) MTCC-0-TE, Tdet = K (-0 C) MTCC-0-TE MTCC-0-TE MTCC-0-TE MTCC-0-TE width height depth Electrical Ta = 0 C. TEC Controller Code Description MTCC-0-P P number of TE cooler stages: TE two - stage TE three - stage MTCC-0 cooler controller series: M - Miniature, T - Thermoelectric, C - Cooler, C - Controller, ver 0 Example iring Diagram AMPx-MIC Cable AMPx-AMPx Cable BIP, MIP, SIP, FIP Integrated Preamplifier MTCC-0 TEC Controller MPPS-0 Linear Power Supply 00..0VAC 0..0Hz J J SMA-BNC Cable To scilloscope 7

74 MTCC-0 Series Physical Dimensions [mm] Power Supply and Control Connectors AMPx Connector Male (J) Pin Number TECC+ TECC GND ) AMPx Connector Male (J) 7 Function Pin Number Function TEC controller supply input (+) Vsup power supply output ( ) TEC controller power ground ) TH thermistor input () +Vsup power supply input (+) FAN+/N.C. fan supply/not connected GND), ) power ground TEC TEC supply output ( ) FAN+/N.C. FAN(+)/not connected GND power ground ) TH thermistor input () 7 +Vsup power supply output (+) TEC+ TEC supply output (+) Vsup ), ) ), ) power supply input ( ) ) TECC GND and GND should be connected together in power adapter. ) See preamplifier specification for details. ) nly for preamplifier module supply, not required for proper controller operation. ) Thermistor polarity without significance. For more details about TE cooling see Infrared Detectors Data Sheets. ARNING! Do not connect TEC or TEC+ to any other supply or to GND! 7

75 MTCC-0 Series Recommended Accessories MPPS-0 LEM-AMPx AMPx-AMPx AMPx-MIC AMPx-PER Preamplifier Power Supply TEC and Supply Cable TEC and Supply Cable Power Supply Cable Power Supply Cable Power Cable EU Power Cable UK Power Cable US Power Cable Power Cable Power Cable 7

76 PTCC-0 PRGRAMMABLE SMART TEC CNTRLLER PTCC-0-EM Description PTCC-0-BAS PTCC-0-ADV PTCC-0 is the programmable, precision, low noise, thermoelectric cooler controller series, designed to operate with VIG IR detection modules. It is compatible with both classic (BIP, MIP, SIP, FIP) and new, programmable PIP preamplifiers, integrated with IR detectors. Available options: PTCC-0-EM PTCC-0-BAS PTCC-0-ADV TEC controller and preamplifier power supply TEC controller and preamplifier power supply TEC controller and preamplifier power supply without housing encapsulated in a small size enclosure encapsulated in a small size enclosure Configurable by PC software available on web Configurable by PC software available on web Configurable by build-in function keys or PC page page software available on web page Status LED indicator and status/data Status LED indicator Status LCD indicator connector Features Low cost Easy to use Very small size Low power consumption High stability and precision Dedicated for opeartion with preamplifiers integrated with with -, -, and -stage TE cooled detectors Compatible with every variant of programmable preamplifier PIP; user can swap the modules and controllers Modern architecture with digitally performed PID temperature control Current / voltage / temperature monitor available with PC program vercurrent, overvoltage and overheating protection Split grounds and filtering for EMC improvement Firmware upgrade option available Provides proper detector cooling Preamplifier supply included TEC Controller Specification Parameter Unit Temperature Stability Temperature Readout Stability K mk Detector Temperature Settling Time s Maximum TEC Current A utput Voltage Range utput Current of The Built-In Power Supply Power Supply Voltage Vsup Power Supply Current Isup Series Resistance of the Connecting Cable V Min Max ± ma V Value Typ Conditions, Remarks Tdet = K (-0 C) Tdet = K (-0 C) Tdet = K (-0 C), ΔTdet = 0. K Tdet = K (-0 C), ΔTdet = 0. K Tdet = K (-0 C), ΔTdet = 0. K TE TE TE. ±00 output voltage:. V wider range available on demand ma 00 ITEC = 0. A, UTEC = 7. V mω 000 total resistance of the wires supplying TEC element width height depth - PTCC-0-EM width height depth - PTCC-0-BAS width height depth - PTCC-0-ADV PTCC-0-EM PTCC-0-BAS PTCC-0-ADV Dimensions mm mm mm eight g Storage Temperature Ambient Temperature C C Relative Humidity % from + C to + C > + C Electrical Ta = 0 C. 7

77 PTCC-0 Series Physical Dimensions [mm] PTCC-0-EM PTCC-0-BAS PTCC-0-ADV 77

78 PTCC-0 Series Power Supply and Control Connector (PTCC-0-BAS and PTCC-0-ADV) Pin Number Function TEC+ TEC supply output (+) TEC TEC supply output ( ) GND power ground TH thermistor input () TH thermistor input () Vsup power supply output ( ) 7 +V FAN and programmable preamp internal logic auxiliary supply DATA bidirectional data port +Vsup power supply output (+) metal cover GND-SH shield DB Connector Female 7 Power Supply and Control Connectors (PTCC-0-EM) Pin Number Function TECC+ TEC controller supply input (+) TECC GND TEC controller power ground Pin Number Function TEC+ TEC supply output (+) TEC TEC supply output ( ) GND power ground TH thermistor input () TH thermistor input () Vsup tower supply output ( ) 7 +V FAN and PIP preamp internal logic auxiliary supply DATA bidirectional data port +Vsup power supply output (+) 0 GND-SH shield KK Connector Male DUBx Connector Male 0 7 Status / DATA Connector (PTCC-0-EM) Pin Number Function ERR LED error indicator LCK LED temperature control loop lock indicator SUP LED module power supply on indicator. V auxiliary supply TD transmitted data (RS-) GND common (signal) ground (RS-) 7 RD received data (RS-) 7 7

79 PTCC-0 Series Recommended Accessories AMPx-DB AMPx-DUBx LEM-DB LEM-DUBx KK-PER TEC and Supply Cable TEC and Supply Cable TEC and Supply Cable TEC and Supply Cable Power Supply Cable USB: TypeA-MicroB AC Adaptor Cable for PC Connection Power Supply Adaptor 7

80 PPS-0 Series PREAMPLIFIER PER SUPPLY Description The PPS-0 preamplifier power supply is designed for supplying VIG System IR Detection Modules included uncooled IR detectors. Features Dedicated for supplying uncooled detectors Compact size Easy to use Low cost Preamplifier Power Supply Specification Parameter Power Supply Voltage Vsup Unit Value Conditions, Remarks V AC 0 to 0 Hz utput Voltage V DC utput Current Dimensions eight ma mm mm mm kg 00 to 0 ± ± +, - ± width height depth Electrical Ta = 0 C. Preamplifier Power Supply Code Description PPS-0-P P power supply: 0 power supply ± V power supply ± V G combined power supply (+ V, - V) for FIP preamplifier PPS-0 preamplifier power supply series P Preamplifier, P Power, S Supply, ver 0 Power Supply Connector Pin Number Function N.C. not connected N.C. not connected GND power ground N.C. not connected N.C. not connected Vsup power supply output ( ) 7 N.C. not connected N.C. not connected +Vsup power supply output (+) DB Connector Female 7 0

81 PPS-0 Series Physical Dimensions [mm] Recommended Accessories AC Adaptor LEM-DB AMPx-DB DB-DB Power Supply Adaptor Supply Cable Supply Cable Supply Cable

82 PPS-0 Series PREAMPLIFIER PER SUPPLY Description The PPS-0 preamplifier power supply is designed for supplying VIG System IR Detection Modules included uncooled IR detectors. Features Dedicated for supplying uncooled detectors Very small size Low cost Preamplifier Power Supply Specification Parameter Power Supply Voltage Vsup Unit Value Conditions, Remarks V AC 0 to 0 Hz utput Voltage V DC utput Current Dimensions eight ma mm mm mm g 00 to 0 ± ± +, - ± width height depth Electrical Ta = 0 C. Preamplifier Power Supply Code Description PPS-0-P P power supply: 0 power supply ± V power supply ± V G combined power supply (+ V, - V) for FIP preamplifier PPS-0 preamplifier power supply series P Preamplifier, P Power, S Supply, ver 0 Power Supply Connector Pin Number Function N.C. not connected N.C. not connected GND power ground N.C. not connected N.C. not connected Vsup power supply output ( ) 7 N.C. not connected N.C. not connected +Vsup power supply output (+) DB Connector Female 7

83 PPS-0 Series Physical Dimensions [mm] Recommended Accessories AC Adaptor LEM-DB AMPx-DB DB-DB Power Supply Adaptor Supply Cable Supply Cable Supply Cable

84 MPPS-0 Series PREAMPLIFIER LINEAR PER SUPPLY Description The MPPS-0 preamplifier linear power supply is designed for supplying VIG System IR Detection Modules included uncooled and cooled (operate with MTCC-0 controllers) IR detectors. Features Provides low noise preamplifier linear power supply Dedicated for supplying uncooled and cooled IR detectors Easy to use Preamplifier Power Supply Specification Parameter Power Supply Voltage Vsup Unit Value Conditions, Remarks V AC 0 to 0 Hz utput Voltage V DC utput Current Dimensions eight ma mm mm mm kg (00 7) to (00 0) ± ± +, - ± width height depth Electrical Ta = 0 C. Preamplifier Power Supply Code Description MPPS-0-P P power supply: 0 power supply ± V power supply ± V G combined power supply (+ V, - V) for FIP preamplifier MPPS-0 preamplifier power supply series M Version, P Preamplifier, P - Power, S - Supply, ver 0 Power Supply Connector MIC Connector Female Pin Number Function TEC TEC supply output ( ) +Vsup power supply output (+) GND power ground Vsup power supply output ( ) TEC+ TEC supply output (+)

85 MPPS-0 Series Physical Dimensions [mm] Recommended Accessories AMPx-MIC LEM-MIC AMPx-MIC Power Cable EU Power Cable UK Power Supply Cable Power Supply Cable Power Supply Cable Power Cable Power Cable Power Cable US Power Cable

86 CABLES BNC-BNC SMA-BNC SMA-SMA MMC-BNC MMC-SMA Signal Input or utput Cable Signal utput Cable Signal utput Cable Signal utput Cable Signal utput Cable MC-BNC MC-SMA AMPx-DB AMPx-DUBx AMPx-AMPx Signal utput Cable Signal utput Cable TEC and Supply Cable TEC and Supply Cable TEC and Supply Cable LEM-DB LEM-DUBx LEM-AMPx AMPx-MIC AMPx-PER TEC and Supply Cable TEC and Supply Cable TEC and Supply Cable Power Supply Cable Power Supply Cable DB-DB DB-mmPLUGS DB-MIC AMPx-MIC LEM-MIC Power Supply Cable Power Supply Cable Power Supply Cable Power Supply Cable Power Supply Cable KK-PER USB: TypeA-MicroB Power Cable EU Power Cable UK Power Cable US Power Supply Cable Cable for PC Connection Power Cable Power Cable Power Cable

87 AC ADAPTRS AC Adaptor Power Supply Adaptor MECHANICAL ACCESSRIES DRB- DRB- MP PH STA-x- Base Mounting System Base Mounting System Mounting Post Post Holder Special Thread Adapter MHS- MHS- MHS- DH-BNC- DH-BNC- AVAILABLE SN Additional Heat Sink Additional Heat Sink Additional Heat Sink AVAILABLE SN Detector's Holder Detector's Holder EL- Accessory Lens with Mount 7

88 DRB- BASE MUNTING SYSTEM Description DRB- is a stable base mountig system dedicated for Bench-Top IR Detection Modules and IR detectors in BNC packages. Features Stable construction Adjustable height Durable, chrome plated elements Specification Parameter Value eight [g] 0 Usable Height [mm] 0..7 Base Plate Diameter [mm] 0 Mounting Post eight [g] Thread Mx or /-0 UNC Physical Dimensions [mm]...

89 DRB- BASE MUNTING SYSTEM Description DRB- is a stable base mountig system dedicated for Bench-Top IR Detection Modules and IR detectors in BNC packages. Standard DRB- consists of: Base Plate BP Mounting Post MP-00 Post Holder PH-00 IMPRTANT NTE! If you require another dimensions of MP or PH, please make remark in your formal purchase order. Features Example Assembling Stable construction Adjustable height Durable elements Compatible with M optical breadboards Special Thread Adapter Mx-M STA-x- (optional) Mounting Post MP ing Knob M K- Thread Adapter M-M TA-- Post Holder PH Base Plate BP

90 MP MUNTING PST Description MP is a mounting post made of stainless steel. It is equipped with two thread adapters TA-- as a standard. MP-0, MP-7 and MP-00 models are available. Example Assembling Specification Model eight [g] Dimension A [mm] MP-0 0 MP-7 7 MP Physical Dimensions [mm] Mounting Post Thread Adapter M-M (TA--) 0

91 PH PST HLDER Description PH is a post holder made of black anodized aluminium. It is equipped with wink knob K- as a standard. PH-0, PH-7 and PH-00 models are available. Example Assembling Specification Model eight [g] Dimension A [mm] PH-0 0 PH PH Physical Dimensions [mm]

92 BP BASE PLATE Description BP is a base plate made of black, lacquered steel. It provides mechanical stable conditions for mounting system. eight: 7g Physical Dimensions [mm]

93 STA-x- SPECIAL THREAD ADAPTER Description STA-x- is a special thread adapter Mx to M, made of stainless steel. It allows to install Detection Modules with Mx mounting hole and Detector's Holder DH-BNC- on Base Mounting System DRB-. eight: g Physical Dimensions [mm]

94 ARRANTY VIG System S.A. hereby represents and warrants all Products manufactured by VIG and sold hereunder to be free from defects in workmanship or material during a period of twelve () months from the date of delivery save for products for which a special warranty is given. If any Product proves however to be defective in workmanship or material within the period herein provided VIG System undertakes to the exclusion of any other remedy to repair or at its own option replace the defective Product or part thereof free of charge and otherwise on the same conditions as for the original Product or part without extension to original warranty time. Defective parts replaced in accordance with this clause shall be placed at the disposal of VIG. VIG also warrants the quality of all repair and service works performed by its employees to products sold by it. In case the repair or service works should appear inadequate or faulty and should this cause malfunction or nonfunctioning of the product to which the service was performed VIG shall at its free option either repair or have repaired or replace the product in question. The working hours used by employees of VIG for such repair or replacement shall be free of charge to the client. This service warranty shall be valid for a period of six () months from the date the service measures were completed. This warranty is however subject to following conditions: a substantiated written claim as to any alleged defects shall have been received by VIG System within thirty (0) days after the defect or fault became known or occurred, and the allegedly defective Product or part shall, should VIG so require, be sent to the works of VIG or to such other place as VIG may indicate in writing, freight and insurance prepaid, properly packed and labeled. This warranty does not however apply when the defect has been caused through. normal wear and tear or accident;. misuse or other unsuitable or unauthorized use of the Product or negligence or error in storing, maintaining or in handling the Product or any equipment thereof;. wrong installation, assembly or failure to service the Product or otherwise follow VIG's service instructions including any repairs or installation or assembly or service made by unauthorized personnel not approved by VIG or replacements with parts not manufactured or supplied by VIG;. modifications or changes of the Product as well as any adding to it without VIG's prior authorization;. burned active element by irradiation above damage thresholds;. electrostatic discharges; 7. improper detector bias;. improper TE cooler bias (TE cooler damage or active element overheating);. other factors dependent on the Customer or a third party. Notwithstanding the aforesaid VIG System liability under this clause shall not apply to any defects arising out of materials, designs or instructions provided by the Customer. This warranty is expressly in lieu of and excludes all other conditions, warranties and liabilities, expressed or implied, whether under law, statute or otherwise, including without limitation any implied warranties of merchantability or fitness for a particular purpose and all other obligations and liabilities of VIG or its representatives with respect to any defect or deficiency applicable to or resulting directly or indirectly from the Products supplied hereunder, which obligations and liabilities are hereby expressly canceled and waived. VIG's liability shall under no circumstances exceed the invoice price of any Product for which a warranty claim is made, nor shall VIG in any circumstances be liable for lost profits or other consequential loss whether direct or indirect or for special damage. RMA Request Instructions: No Product may be returned without first contacting VIG for a Return Material Authorization ('RMA') number. Please obtain a RMA number from VIG Support Team before returning any item. hen requesting a RMA number, please state your order number, the product you wish to return and the reason for return. e will only accept returns which have an RMA number. Authorized returns are to be shipped according to received instruction from VIG in appropriate shipping box. An unauthorized return, i.e. one for which an RMA number has not been issued and authorized returns however, shipped with incorrect customs documents - will not be accepted. Please print the RMA number clearly on the return label to avoid any delay in processing. Please send package to: VIG System S.A. Sales ffice, Building B / Poznanska St. 0-0 zarow Mazowiecki PLAND

95 CNTACT AND DISTRIBUTRS Find ur Products in Your Country To find our representative in your local area, please check the table below. If you do not find a Distributor listed in your country, please contact us directly: VIG System S.A. / Poznanska Str. 0-0 zarow Mazowiecki PLAND tel.: fax: info@vigo.com.pl CHINA CHINA FRANCE BIT Photoelectronic Co., Ltd Uniqueray Technologies Limited ACAL BFI FRANCE tel.: fax: tel.: + 7 fax: + 7 mobile: sales@uniqueray.com tel.: + (0) fax: + (0) sales@bitpe.com GERMANY ISRAEL louis.goyez@acalbfi.fr ITALY DoroTEK GmbH Bi-Pol Massimo Bonfante tel.: + (0) 7 fax: (0) tel.: info@dorotek.de evyatar@bi-pol.com tel.: fax: + 0 mobile: info@masbonfante.it JAPAN JAPAN FIT Leadintex, Inc. IR System Co., Ltd. Mexitek, S.A. tel.: fax: tel.: fax: tel.: sales@fit-leadintex.jp office@irsystem.com sales@mexitek.com NETHERLANDS UNITED KINGDM MEIC & USA & CLMBIA CANADA Jonat Automation B.V. Photonic Solutions, LTd Boston Electronics Corporation tel.: + (0) 7 fax: + (0) 7 mobile: + (0) 0 info@jonat.com tel: + (0) fax: + (0) 70 tel.: (7) fax: (7) sales@photonicsolutions.co.uk vigo@boselec.com ould You Like To Be ur Distributor? In order to increase our presence in the global market, we are looking for prospective partners for distribution of our products. For more information, please contact us.

96 Appendix

97 Two-stage thermoelectric cooler - TE Lens shape Hyperhemisphere Hemisphere Flat Detector optical area [mm²] 0.x0. x x x 0.x0. - x 0.0x0.0 - x R [mm] infity A [mm].±0..±0..±0. 0.±0..±0..±0. B [mm].±0..±0..±0..±0..±0..± FV. ± C [mm] ±0. ±0. ±0. ±0. ±0. ±0. FV ~ ~ ~ ~ ~70 ~70 Three-stage thermoelectric cooler - TE Lens shape Hyperhemisphere Hemisphere Flat Detector optical area [mm²] 0.x0. x x x 0.x0. - x 0.0x0.0 - x R [mm] infity A [mm].7±0..±0..±0..±0. 7.±0. 7.±0. B [mm] 7.±0. 7.±0. 7.±0. 7.±0. 7.±0. 7.±0. C [mm].±0..±0..±0..±0..±0..±0. FV ~ ~ ~ ~ ~70 ~70 Four-stage thermoelectric cooler - TE Lens shape Hyperhemisphere Hemisphere Flat Detector optical area [mm²] 0.x0. x x x 0.x0. - x 0.0x0.0 - x R [mm] infity A [mm] 7.±0..±0. ±0. ±0..±0..±0. B [mm].±0..±0..±0..±0..±0..±0. C [mm] ±0. ±0. ±0. ±0. ±0. ±0. FV ~ ~ ~ ~ ~70 ~70 F. ±0. A 7 B 7. ±0. C Pin out Signal and Thermistor 7 and TE Cooler Supply (+) and (-) Chassis Ground not used,,, 0, A - Distance from the bottom of the T package to the focal plane UNC The drawings and the information provided with the drawings are the sole property of VIG System S.A. Any disclosure or reproduction, in part or whole, without the written permission of VIG System S.A. is prohibited. VIG System's detectors contains miniature amounts of mercury and cadmium but as part of medical devices, monitoring and control instruments can be treated as an exempt from the UE Directive on the Restriction of Hazardous Substances (RoHS). -0 UNC A screw 7 No. Thermo-electic cooler Detector on sapphire pad indow Detector cap Absorber container Detector case T housing Name UNIT: mm GENERAL TLERANCE:.=±0. /.=±0.0 SIZE TITLE: A HgCdTe / GaAs / Sapphire Al / ZnSe / other Stainless steel Stainlesl steel Stainless steel Gold plated Kovar Material Date: -Jul- Production Department SCALE: DG N: : DT-T-TE.00 SHEET F Detector T - TE EIGHT: 7u g

98 FV... R B A Lens shape Hyperhemisphere Hemisphere Flat Detector optical area [mm²] 0.x0. x x x 0.x0. - x 0.0x0.0 - x R [mm] infity A [mm].±0..±0..7±0..± B [mm].±0..±0..±0..±0..±0..±0. FV ~ ~ ~ ~ ~0 ~0 Pin out Signal (+) and (-) Chassis Ground 0. The drawings and the information provided with the drawings are the sole property of VIG System S.A. Any disclosure or reproduction, in part or whole, without the written permission of VIG System S.A. is prohibited. VIG System's detectors contains miniature amounts of mercury and cadmium but as part of medical devices, monitoring and control instruments can be treated as an exempt from the UE Directive on the Restriction of Hazardous Substances (RoHS). No. Detector on sapphire pad Detector cap T housing Name UNIT: mm GENERAL TLERANCE:.=±0. /.=±0.0 SIZE TITLE: A SCALE: HgCdTe / GaAs / Sapphire Brass Gold plated Kovar Material : Detector T pin Date: -Jul- DG N: DT-T.00 Production Deparment SHEET F EIGHT: u g

99 FV C B A R 7.7 ±0. 0 ± 0. ± Lens shape Hyperhemisphere Hemisphere Flat Detector optical area [mm²] 0.x0. x x x 0.x0. - x 0.0x0.0 - x R [mm] infity A [mm].±0..±0..±0. 7.±0..±0..±0. B [mm].±0..±0..±0..±0..±0..±0. FV, C=Ø [mm] ~ ~ ~ ~ ~ ~0 FV, C=Ø [mm] ~ ~ ~ ~ ~ ~ The drawings and the information provided with the drawings are the sole property of VIG System S.A. Any disclosure or reproduction, in part or whole, without the written permission of VIG System S.A. is prohibited. VIG System's detectors contains miniature amounts of mercury and cadmium but as part of medical devices, monitoring and control instruments can be treated as an exempt from the UE Directive on the Restriction of Hazardous Substances (RoHS). No. Detector on sapphire pad Detector cap Detector case BNC connector - may vary from shown in drawing Name UNIT: mm GENERAL TLERANCE:.=±0. /.=±0.0 SIZE TITLE: A SCALE: : Detector BNC HgCdTe / GaAs / Sapphire Copper covered with Cr-Ni Copper covered with Cr-Ni Material Date: -Jul- DG N: DT-BNC.00 Production Deparment EIGHT: SHEET F u g

100 . ±0.. ±0.. ± ±0. The drawings and the information provided with the drawings are the sole property of VIG System S.A. Any disclosure or reproduction, in part or whole, without the written permission of VIG System S.A. is prohibited. VIG System's detectors contains miniature amounts of mercury and cadmium but as part of medical devices, monitoring and control instruments can be treated as an exempt from the UE Directive on the Restriction of Hazardous Substances (RoHS). No. SMA connector Detector on sapphire pad indow Detector cap Detector housing PEM handle Name UNIT: mm GENERAL TLERANCE:.=±0. /.=±0.0 SIZE TITLE: A SCALE: Gold coated brass / PTFE HgCdTe / GaAs / Sapphire ZnSe / other Black anodized Al Black anodized Steel Black anodized Al Material : Detector PEM Date: -Jul- DG N: DT-PEM.00 Production Department SHEET F EIGHT: u g