High Performance Silicon Drift Detectors

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Paris ESRF Meeting 2015 CUBE High Performance Silicon Drift Detectors Martin Hofmann, M. Bachmann, T. Eggert, R. Fojt, M. Fraczek, L. Höllt, P. Iskra, J. Knobloch, N. Miyakawa, A. Pahlke, S. Pahlke, J. Rumpff, O. Scheid, A. Şimşek, R. Stötter, I. Wennemuth, F. Wiest KETEK GmbH, Hofer Str. 3, 81737 Munich, Germany Entwicklerrunde Paris ESRF 2015 M. PEK, Hofmann, MIB, MHO KETEK 26.August GmbH 2014 March, Entwicklerrunde Seite 16th 12015 26.August Page 1 2014 (pek, mib, mho)

Outline Low capacitance CUBE ASIC as FET replacement 150 mm² - world s largestsdd 7-channel SDD array Low-energy performance of KETEK SDDs 775 µm thick SDD SDD with multilayer absorber plate Entwicklerrunde Paris ESRF 2015 M. PEK, Hofmann, MIB, MHO KETEK 26.August GmbH 2014 March, Entwicklerrunde Seite 16th 2015 26.August Page 2 2014 (pek, mib, mho)

The complete VITUS CUBE SDD Series VITUS CUBE H7 H20 H30 H50 H80 H150 Entwicklerrunde Paris ESRF 2015 M. PEK, Hofmann, MIB, MHO KETEK 26.August GmbH 2014 March, Entwicklerrunde Seite 16th 32015 26.August Page 3 2014 (pek, mib, mho)

New KETEK CUBE Class SDD ASIC as FET replacement Advantages Extremely low capacitance of total sensor system (approx. factor 3 lower than FET based detectors) Amplified signal at detector output High count-rate capability in combination with excellent energy resolution SDD ASIC Entwicklerrunde Paris ESRF 2015 M. PEK, Hofmann, MIB, MHO KETEK 26.August GmbH 2014 March, Entwicklerrunde Seite 16th 42015 26.August Page 4 2014 (pek, mib, mho)

New KETEK CUBE Class SDD VITUS CUBE H7 H50 in TO8 housing H7: 10 mm² collimated to 7 mm² active area H20: 30 mm² collimated to 20 mm² active area H30: 40 mm² collimated to 30 mm² active area H50: 65 mm² collimated to 50 mm² active area FWHM MnK α : <125 ev @ 2 µs peaking time High operation temperatures up to +20 C still allow resolution of 156 ev @ 0.5 µs for the 7 mm² detector FWHM vs. peaking time for H20 SDD at different temperatures Count rate dependency H20 SDD Entwicklerrunde Paris ESRF 2015 M. PEK, Hofmann, MIB, MHO KETEK 26.August GmbH 2014 March, Entwicklerrunde Seite 16th 52015 26.August Page 5 2014 (pek, mib, mho)

New KETEK CUBE Class SDD VITUS CUBE H150 150 mm² active, collimated chip area No ballistic deficit even at peaking time of 0.2 µs 25 µm Be-window The world s largest circular Silicon Drift Detector Very large solid angle FWHM vs. Peaking peaking Time time for H150 SDD at different temperatures FWHM Count rate vs Input dependency Count Rate H150 SDD Entwicklerrunde Paris ESRF 2015 M. PEK, Hofmann, MIB, MHO KETEK 26.August GmbH 2014 March, Entwicklerrunde Seite 16th 62015 26.August Page 6 2014 (pek, mib, mho)

VITUS 7-channel SDD Array 7x H80 SDDs in 1 DetectorSystem 7 individual CUBE SDDs with Multilayer collimator In total 560 mm² active, collimated chip area with a large filling factor (~30%) FWHM MnK α : <140 ev @ optimal peaking time No active pumping Water cooling of heat sinks allows chip operation temperatures down to -55 C Outer diameter of detector head 45mm Finger diameter 50mm, finger length dependent on customer configuration Electronics completely configurated Entwicklerrunde Paris ESRF 2015 M. PEK, Hofmann, MIB, MHO KETEK 26.August GmbH 2014 March, Entwicklerrunde Seite 16th 72015 26.August Page 7 2014 (pek, mib, mho)

Low-Energy Performance of KETEK SDDs SEM/TEM applications Available as 7 mm² and 18 mm² modules Moxtek AP3.3 window Down to 35 ev FWHM for Beryllium K α -line corresponds to C-FWHM of < 40 ev Detection of Lithium (@ 52 ev) possible Beryllium spectrum of 50 mm² SDD Lithium spectrum of 80 mm² SDD State of the art detectors for SEM/TEM applications Spectra by courtesy of Oxford Instruments NanoAnalysis Entwicklerrunde Paris ESRF 2015 M. PEK, Hofmann, MIB, MHO KETEK 26.August GmbH 2014 March, Entwicklerrunde Seite 16th 82015 26.August Page 8 2014 (pek, mib, mho)

New High Energy SDD Thick775 µm SDD Standard thickness of SDDs is 450 µm X-ray energies > 15 kev can be measured only with quantum efficiency < 60% 775 µm thick SDDs increase efficiency at higher energies Photoabsorption Efficiency Mo 41% higher absorption Cd 56% higher absorption Sn 59% higher absorption Spectroscopic properties are equal to 450 µm SDDs KETEK portfolio will be expanded by 775 µm thick 30 mm² SDD (H20) in 2016 Entwicklerrunde Paris ESRF 2015 M. PEK, Hofmann, MIB, MHO KETEK 26.August GmbH 2014 March, Entwicklerrunde Seite 16th 92015 26.August Page 9 2014 (pek, mib, mho)

SDD with Multilayer Absorber Plate Absorbing parasitic fluorescence lines Multilayer plate between TEC and SDD chip absorbs emitted X-rays from TEC Antimony (Sb), Tin (Sn), Tellurium (Te) and Indium (In) are no longer visible in spectrum Better limit of detection for Sb, Sn, Te and In in customer application Spectra with and without multilayer absorber plate Drawing of detector with absorber layer Fluorescence from TEC effectively suppressed no absorber with ML absorber Entwicklerrunde Paris ESRF 2015 M. PEK, Hofmann, MIB, MHO KETEK 26.August GmbH 2014 March, Entwicklerrunde Seite 16th 10 2015 26.August Page 10 2014 (pek, mib, mho)

KETEK Silicon Drift Detectors YEARS 1989-2015 THANK Y O U Entwicklerrunde Paris ESRF 2015 M. PEK, Hofmann, MIB, MHO KETEK 26.August GmbH 2014 March, Entwicklerrunde Seite 16th 11 2015 26.August Page 11 2014 (pek, mib, mho)