Selection guide - September Covering a broad spectral range in the infrared region HAMAMATSU PHOTONICS K.K.

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1 Selection guide - September 217 Infrared Detectors Covering a broad spectral range in the infrared region HAMAMATSU PHOTONICS K.K.

2 Infrared detectors Infrared detectors are widely used in diverse field including measurement, analysis, industry, communication, agriculture, medicine, physical and chemical science, astronomy and space. Based on long experience involving photonic technology, Hamamatsu provides a wide variety of infrared detectors in order to meet a large range of application needs. In addition to the standard devices listed in this catalog, custom devices are also available on request. Please feel free to contact the nearest sales office in your area. Contents InGaAs PIN photodiodes 1 1 Infrared detectors

3 InAs/InAsSb/InSb photovoltaic detectors, InSb photoconductive detectors 1 Thermopile detectors (Si thermal detectors) 13 Two-color detectors 14 n drag detector 16 Accessories for infrared detectors 17 Description of terms 23 Infrared detectors 2

4 Infrared detectors Hamamatsu infrared detectors range Product name Features Page InGaAs PIN photodiodes InGaAs image sensors Short enhanced type Can detect light from.5 µm Standard type High-speed response, high sensitivity, low dark current Available various types of photosensitive areas, arrays and packages For optical measurement around 1.7 µm Available type For optical measurement in the band of water content absorption (1.9 µm) Available type For NIR spectroscopy Available type Types for spectrophotometry and WDM monitor, and high-speed type available 1 1, 2, to 9 Product name range Features Page InAs photovoltaic detectors InAsSb photovoltaic detectors InSb photovoltaic detectors InSb photoconductive detectors Covers a spectral response range close to PbS but offers higher response speed Infrared detectors in the 5 µm, 8 µm, or 1 µm spectral band, with high sensitivity and high reliability High-speed response High-speed and high sensitivity in so-called atmospheric window (3 to 5 µm) Detects s up to around 6.5 µm, with high sensitivity over long periods by thermoelectric cooling Thermopile detectors Two-color detectors Si + InAsSb Si + InGaAs InGaAs + InGaAs Sensors that generate thermoelectromotive force in proportion to the energy level of incident infrared light Wide spectral response range from UV to IR Uses two detectors with different spectral response ranges, mounted one over the other along the same optical axis 13 14, 15 n drag detector 1 High-speed detector with high sensitivity in 1 µm band (for CO2 laser detection) Room temperature operation with high-speed response 16 For detailed information on the products listed in this catalog, see their datasheets that are available from our website

5 of Hamamatsu infrared detectors (typical example) Si (25 C) Short enhanced type InGaAs (25 C) Long type InGaAs (-196 C) InAs (-196 C) voltaic detectors conductive detectors Si thermal detectors D* (cm Hz 1/2 /W) Long type InGaAs (25 C) InSb (-196 C) InAsSb (-196 C) InAsSb for 8 μm band (-3 C) Thermopile InSb (-6 C) InAsSb (25 C) InAsSb (-3 C) InAsSb for 1 μm band (-3 C) KIRDB259EI When using infrared detectors, the following points should be taken into consideration for making a device selection. Law of black body radiation (Planck's law) As can be seen from the figure above, Hamamatsu provides a variety of infrared detectors with different spectral response characteristics. It should be noted that cooling a detector element may affect its spectral response. For InGaAs, InAs, InSb and InAsSb detectors, the spectral response shifts to the shorter side. Response speed Various detectors are available with different response speeds. sensitive area and number of elements Hamamatsu photosensors are available in a wide range of photosensitive area sizes. Also available are multi-element detector arrays optimized for high-speed multichannel spectrophotometry. Spectral radiance N. (W cm -2 sr -1 μm -1 ) T(K)= Cooling Besides easy-to-use photosensors designed for room temperature, Hamamatsu provides various types of sensors that are cooled with thermoelectric coolers, cryogenic dewars (for liquid nitrogen cooling). KIRDB14EB Object temperature When selecting a detector in accordance with the temperature of an object, it is necessary to consider the distribution of the energy (the dependency of the energy) radiated from the object. When the temperature of the object is changed, the distribution of the radiating energy is given by the law of black body radiation (Planck's law), as shown in the figure at the righthand side. The following relationship is established by the peak sensitivity λp (μm) and the absolute temperature T (K). λp T=2897.9

6 InGaAs PIN photodiodes Short enhanced type G1899-3K Cooling sensitive area ϕ.3 range λ Peak sensitivity λp Cutoff frequency fc VR=1 V (MHz) G1899-5K ϕ.5 15 G1899-1K Non-cooled ϕ1.5 to G1899-2K ϕ2 1 G1899-3K ϕ3 5 3 Package TO-18 TO-5 (Typ. Ta=25 C, unless otherwise noted) Option (sold separately) C (P.21) Standard type Metal package Various photosensitive area sizes are available. G1218-3A Cooling sensitive area ϕ.3 G1218-5A ϕ.5 G1218-1A G1218-2A G1218-3A ϕ1 ϕ2 ϕ3 range λ Peak sensitivity λp Cutoff frequency fc (MHz) 6 (VR=5 V) 2 (VR=5 V) 6 (VR=5 V) 13 (VR=1 V) 7 (VR=1 V) Package TO-18 TO-5 (Typ. Ta=25 C, unless otherwise noted) Option (sold separately) G1218-5A Non-cooled ϕ5.9 to (VR=1 V) TO-8 C (P.21) G837-81* ϕ1 35 (VR=1 V) TO-18 G837-82* G837-83* ϕ2 ϕ3 4 (VR=1 V) 2 (VR=1 V) TO-5 G837-85* ϕ (VR=1 V) TO-8 G A G A G A G A G A G A G A G A One-stage (Tchip=-1 C) Two-stage (Tchip=-2 C) ϕ1 ϕ2 ϕ3 ϕ5 ϕ1 ϕ2 ϕ3 ϕ5.9 to to (VR=1 V) 13 (VR=1 V) 7 (VR=1 V) 3 (VR=1 V) 4 (VR=1 V) 13 (VR=1 V) 7 (VR=1 V) 3 (VR=1 V) TO-8 C (P.21) A3179 (P.19) C113-4 (P.18) C (P.21) A (P.19) C113-4 (P.18) G Non-cooled ϕ.8.9 to (VR=5 V) TO-18 with CD lens * Low PDL (polarization dependent loss) type 1 Infrared detectors

7 InGaAs PIN photodiodes Ceramic package sensitive area range λ Peak sensitivity λp Cutoff frequency fc VR=5 V (MHz) Package (Typ. Ta=25 C) G R ϕ.2 1 G R ϕ to Surface mount type ceramic G R ϕ1 6 G837-1 ϕ1.1 (VR= V) Ceramic Surface mount type sensitive area range λ Peak sensitivity λp Cutoff frequency fc VR=5 V (MHz) (Typ. Ta=25 C) Package Type G ϕ1 G ϕ Ceramic (non-sealed) Front-illuminated type G to Ceramic (non-sealed) ϕ.3 G P 6 Plastic COB G P ϕ1 6 Plastic G1899 series, etc. G1218 series G11193/G13176 series, G G837-81/-82/-83/-85 G1899 series (Typ. Ta=25 C) 1. Tchip=25 C Tchip=-1 C Tchip=-2 C (Typ.) 1. G13176 series (Typ. Ta=25 C) sensitivity (A/W) Si photodiode S1337-BQ G G8941 series sensitivity (A/W) sensitivity (A/W) G G11193 series.19 Si photodiode S1337-BR KIRDB444EE KIRDB374EC KIRDB284ED Infrared detectors 2

8 Long type Peak sensitivity : 1.75 μm These are suitable for optical measurement around 1.7 μm. (Typ. Ta=25 C, unless otherwise noted) Cooling sensitive area range λ Peak sensitivity λp Cutoff frequency fc VR= V (MHz) Package Option (sold separately) G K ϕ.3 9 G K ϕ.5 35 TO-18 G K Non-cooled ϕ1.9 to C (P.21) G K ϕ2 2.5 G K ϕ3 1.5 TO-5 G K ϕ.3 14 G K ϕ.5 5 One-stage G K ϕ1.9 to (Tchip=-1 C) G K ϕ2 3.5 G K ϕ3 1.8 TO-8 C (P.21) A3179 (P.19) C113-4 (P.18) G K ϕ.3 15 G K ϕ.5 53 G K Two-stage (Tchip=-2 C) ϕ1.9 to G K ϕ2 3.7 G K ϕ3 1.9 TO-8 C (P.21) A (P.19) C113-4 (P.18) Peak sensitivity : 1.95 μm These are suitable for optical measurement in the 1.9 μm band such as water absorption. G K Cooling sensitive area ϕ.3 range λ Peak sensitivity λp Cutoff frequency fc VR= V (MHz) G K ϕ.5 35 G K Non-cooled ϕ1.9 to G K ϕ2 2.5 G K ϕ Package TO-18 TO-5 (Typ. Ta=25 C, unless otherwise noted) Option (sold separately) C (P.21) G K ϕ.3 14 G K ϕ.5 5 One-stage G K ϕ1.9 to (Tchip=-1 C) G K ϕ2 3.5 G K ϕ3 1.8 TO-8 C (P.21) A3179 (P.19) C113-4 (P.18) G K ϕ.3 15 G K ϕ.5 53 G K Two-stage (Tchip=-2 C) ϕ1.9 to G K ϕ2 3.7 G K ϕ3 1.9 TO-8 C (P.21) A (P.19) C113-4 (P.18) 3 Infrared detectors

9 Peak sensitivity : 2.3 μm InGaAs PIN photodiodes These are suitable for use in NIR (near infrared) spectroscopy. (Typ. Ta=25 C, unless otherwise noted) Cooling sensitive area range λ Peak sensitivity λp Cutoff frequency fc VR= V (MHz) Package Option (sold separately) G K ϕ.3 5 G K ϕ.5 2 TO-18 G K Non-cooled ϕ1.9 to C (P.21) G K ϕ2 1.5 G K ϕ3.8 TO-5 G K ϕ.3 7 G K ϕ.5 25 One-stage G K ϕ1.9 to (Tchip=-1 C) G K ϕ2 2 G K ϕ3.9 TO-8 C (P.21) A3179 (P.19) C113-4 (P.18) G K ϕ.3 75 G K ϕ.5 28 G K Two-stage (Tchip=-2 C) ϕ1.9 to G K ϕ2 2.3 G K ϕ3 1 TO-8 C (P.21) A (P.19) C113-4 (P.18) G12181 series G12182 series G12183 series 1. Tchip=25 C Tchip=-1 C Tchip=-2 C (Typ. VR= V) 1.4 Tchip=25 C Tchip=-1 C Tchip=-2 C (Typ. VR= V) 1.4 Tchip=25 C Tchip=-1 C Tchip=-2 C (Typ. VR= V) sensitivity (A/W) sensitivity (A/W) sensitivity (A/W) KIRDB483ED KIRDB487ED KIRDB491ED Infrared detectors 4

10 Infrared detector modules with preamp These modules consist of the InGaAs PIN photodiode assembled with matched preamplifier, and operate by connecting a DC power supply. (Typ.) Detector Cooling sensitive area Measurement condition Chip temperature ( C) Cutoff λc Peak sensitivity λp G6121 G837-5 Non-cooled ϕ C G A ϕ C G K ϕ1 C G K G G G (chip) G (chip) Note: Supplied with a power supply cable Liquid nitrogen ϕ1 ϕ (Typ. Ta=25 C) C G7754-1/-3 G6121 D* λ (cm Hz 1/2 /W) C C KIRDB369EF Hamamatsu also provides the C1439-1/-11 photodiode modules that integrate an InGaAs photodiode and a current-to-voltage conversion amplifier. 5 Infrared detectors

11 InGaAs photodiode arrays InGaAs PIN photodiodes (Typ. Ta=25 C) sensitive area range λ Peak sensitivity λp Package G G6849 ϕ1 (Quadrant element) ϕ2 (Quadrant element) TO-5 G (16-element) G D G D (16-element).2 1. (32-element).9 to Ceramic G D.2 1. (46-element) G899-1 ϕ.8 (4-element) Ceramic (Non-sealed) InGaAs photodiode arrays 1. (Typ. Ta=25 C).8 sensitivity (A/W) KIRDB2EB Infrared detectors 6

12 InGaAs linear image sensors for spectrometry These linear image sensors are suitable for NIR (near infrared) spectrometers. Cooling Pixel height Pixel pitch Number of pixels Line rate (lines/s) Spectral responese range λ Defective pixels Dedicated driver circuit (sold separately) G D to 1.7 G D * Noncooled 5 G DA to 1.7 1% max. G DA * G S G S * G S G S G S One-stage (Tchip=-1 C) * G S * G S G S *.9 to % max. C861-1 G W.9 to 1.85 G W.9 to 2.5 G to % max. G W Two-stage.9 to G W (Tchip=-2 C).9 to 2.55 C862-1 G W.9 to 1.85 G W *.9 to % max. G W.9 to 2.55 * When two video lines are used for readout, the line rate is equal to that for 256 channels. G921 to G928 series, etc. G1768 series G WB sensitivity (A/W) 1.5 Tchip=25 C Tchip=-1 C G W Tchip=-2 C G W G921 to G924/ G9211 to G9214/ 1. G9494 series.5 G11135 series G1162 series G1168 series (Typ. Ta=25 C) G W G W sensitivity (A/W) Tchip=5 C Tchip= C Tchip=25 C (Typ.) sensitivity (A/W) Tchip=25 C Tchip=-2 C (Typ.) KMIRB68EF KMIRB42EC KMIRB94EB 7 Infrared detectors

13 InGaAs PIN photodiodes High-speed type InGaAs linear image sensors These are linear image sensors with high-speed data rate designed for industrial measuring instruments. Cooling Pixel height Pixel pitch Number of pixels Line rate (lines/s) Spectral responese range λ Defective pixels Dedicated driver circuit (sold separately) G D Non-cooled.9 to 1.7 1% max. C182 G D * * When two video lines are used for readout, the line rate is equal to that for 256 channels. The G1768 series is a high-speed infrared image sensor with 124 pixels designed for applications such as foreign object screening and medical diagnostic equipment where a multichannel high-speed line rate is required. Cooling Pixel height G D 1 Non-cooled G DB 25 Pixel pitch Number of pixels Line rate (lines/s) Spectral responese range λ Defective pixels Dedicated driver circuit (sold separately) to 1.7 1% max. C1854 Back-illuminated type InGaAs linear image sensors The back-illuminated InGaAs photodiode and CMOS-ROIC are bump bonded to provide a single output terminal. Cooling Pixel height Pixel pitch Number of pixels Line rate (lines/s) Spectral responese range λ Defective pixels Dedicated driver circuit (sold separately) G DD C11514 G DE G DA Non-cooled 5.95 to 1.7 G DA % max. 5 C11513 G DF G DA G SA One-stage G SA (Tchip=-1 C) to 1.67 G WB Two-stage (Tchip=-2 C) to % max. Infrared detectors 8

14 InGaAs area image sensors The InGaAs area image sensors have a hybrid structure consisting of a CMOS readout circuit (ROIC: readout integrated circuit) and back-illuminated InGaAs photodiodes. Cooling Pixel height Pixel pitch Number of pixels Frame rate* (frames/s) Spectral responese range λ Defective pixels Dedicated driver circuit (sold separately) G S C11512 One-stage.95 to 1.7 (Tchip=25 C) G S % max. C G S One-stage (Tchip= C) to 1.9 C11512 G W % max. C G W Two-stage (Tchip=15 C) G W to % max. Two-stage G (Tchip=-2 C) * Integration time 1 μs (min.) to % max. G1197 series, G W G S G (Typ. Ta=25 C) (Typ. Ta=25 C) (Typ. Tchip=-2 C) sensitivity (A/W).6.4 sensitivity (A/W) sensitivity (A/W) KMIRB99EB KMIRB51EB KMIRB78EA 9 Infrared detectors

15 InAs/InAsSb/InSb photovoltaic detectors, InSb photoconductive detectors InAs photovoltaic detectors are capable of detecting infrared light up to approx. 3.5 μm. InSb photovoltaic detector can sense infrared light up to approx. 5.5 μm, and InSb photoconductive detectors infrared light up to approx. 6 μm. InAsSb photovoltaic detectors also delivers high sensitivity in the 5 μm, 8 μm, or 1 μm band. InSb photoconductive detectors are available in multielement arrays (custom-made product). InAs and InSb photovoltaic detectors cover a spectral response range equivalent to PbS and PbSe photoconductive detectors, respectively, and feature higher response speed and better S/N. InAs photovoltaic detectors InAs photovoltaic detectors are high-speed, low-noise infrared detectors capable of detecting infrared light up to approx. 3.5 μm. (Typ.) Cooling sensitive area Cutoff λc Peak sensitivity Package Option (sold separately) P19-1 Non-cooled TO-5 C (P.21) P19-11 P19-21 One-stage (Tchip=-1 C) Two-stage (Tchip=-3 C) ϕ TO-8 A (P.19) C113-4 (P.18) C (P.21) A (P.19) C113-4 (P.18) C (P.21) P7163 Liquid nitrogen (Tchip=-196 C) Metal dewar C (P.21) InAsSb photovoltaic detectors InAsSb photovoltaic detectors have high infrared sensitivity with a cutoff in the 5 μm, 8 μm or 1 μm band. A small surface-mount package type (P CA) is also provided. Cooling sensitive area Cutoff λc Peak sensitivity Package (Typ.) Option (sold separately) P P Liquid nitrogen (Tchip=-196 C) Two-stage (Tchip=-3 C) ϕ Metal dewar C (P.21) TO-8 A (P.19) C113-4 (P.18) C (P.21) P CA Cramic Non-cooled C (P.21) P MA TO-46 P Two-stage (Tchip=-3 C) ϕ TO-8 A (P.19) C113-4 (P.18) C (P.21) P MA Non-cooled 11. TO-5 C (P.21) P MA Two-stage (Tchip=-3 C) TO-8 A (P.19) C113-4 (P.18) C (P.21) Infrared detectors 1

16 InSb photovoltaic detectors InSb photovoltaic detectors are high-speed, low-noise infrared detectors that deliver high sensitivity in the so-called atmospheric window between 3 and 5 μm. The infrared light in the 5 μm band can be detected with peak sensitivity and high response speed. A metal dewar type cooled with liquid nitrogen is also available. (Typ.) P Cooling sensitive area ϕ.6 P ϕ1 Cutoff λc Peak sensitivity λp Package Option (sold separately) C (P.21) P ϕ2 C (P.21) Liquid nitrogen Metal dewar P (Tchip=-196 C) Custom-made ϕ3 product P (16-element) P (4 4-element) InAs photovoltaic detectors P1112/P13243 series, P (Typ.) P7163 (Tchip=-196 C) 1 11 (Typ.) P (Tchip=-196 C) D* (λ, 12, 1) (cm Hz 1/2 /W) P19-21 (Tchip=-3 C) P19-1 (Tchip=25 C) P19-11 (Tchip=-1 C) D* (λ, 12, 1)(cm Hz 1/2 /W) P (Tchip=-3 C) P (Tchip=-3 C) P CA/MA (Tchip=25 C) KIRDB356EE KIRDB43EH P13894 series InSb photovoltaic detectors 1 9 P MA (Tchip=-3 C) (Typ.) 1 12 (Typ. Tchip=-196 C) D* (λp, 12, 1) (cm Hz 1/2 /W) P MA (Tchip=25 C) D* (λp, 12, 1) (cm Hz 1/2 /W) KIRDB626EA KIRDB63EF 11 Infrared detectors

17 InAs/InAsSb/InSb photovoltaic detectors, InSb photoconductive detectors InSb photoconductive detectors Thermoelectrically cooled InSb photoconductive detectors are capable of detecting infrared light up to around 6 μm with high sensitivity and high speed. (Typ.) P P Cooling One-stage (Tchip=-1 C) Two-stage (Tchip=-3 C) sensitive area 1 1 Cutoff λc Peak sensitivity λp 5.5 Package TO-8 Option (sold separately) A (P.19) C113-7 (P.18) C (P.22) A (P.19) C113-7 (P.18) C (P.22) P P Three-stage (Tchip=-6 C).5.5 P TO-3 A (P.19) C113-5 (P.18) C (P.22) Infrared detector modules with preamp These modules consist of the InSb detector assembled with the matched preamplifier, and operate by connecting a DC power supply. (Typ.) Detector sensitive area Cooling Measurement condition Chip temperature ( C) Cutoff λc Peak sensitivity λp P InSb (P666-31) P7751-1* P7751-2* C C S C M InSb (P5968-6) InSb (P5968-2) InAs (P19-21) InAsSb (P ) InAsSb (P ) * FOV=6 Note: Supplied with a power supply cable ϕ.6 ϕ2 Liquid nitrogen ϕ InSb photoconductive detectors Infrared detector module with preamp D* (λp, 12, 1) (cm Hz 1/2 /W) P (Tchip=-3 C) (Typ.) P (Tchip=-6 C) P (Tchip=-1 C) D* (λ, 12, 1) (cm Hz 1/2 /W) P7751-1/-2 (Tchip=-196 C) C (Tchip=-28 C) (Typ.) C M (Tchip=-28 C) P (Tchip=-58 C) C S (Tchip=-28 C) KIRDB166ED KIRDB371EH Hamamatsu also provides the C photodiode module that integrates an InAsSb photovoltaic detector and a current-to-voltage conversion amplifier. Infrared detectors 12

18 Thermopile detectors (Si thermal detectors) Single-element type Hamamatsu provides high-sensitivity thermopile detectors suitable for gas concentration measurement, etc. Concentration of various types of gases can be measured by attaching a band-pass filter to thermopile detectors. The T is suitable for flame detection and the T for CO2 concentration measurement. Package Number of elements sensitive area Window T AR-coated Si 3 to 5 T * TO-18 1 T Band-pass filter T * 4.3 * Built-in thermistor Dual-element type The T is a dual-element type thermopile detector designed to detect CO2 concentrations with a high accuracy. It consists of a high sensitivity dual-element thermopile detector and two band-pass filters for sensing two s (reference: 3.9 μm, CO2: 4.3 μm) simultaneously. Package Number of elements sensitive area Window T TO-5 2 (per 1 element) Band-pass filter Reference: 3.9 CO2: 4.3 Window options (typical examples of spectral response) Since thermopile detectors have no dependence, their spectral response characteristics are determined only by the transmittance of the window material. The graph below shows transmittance characteristics of typical window materials. Please contact our sales office about changing the window of a thermopile detector to the following materials. 1 9 AR-coated Si T μm long pass 8 8 to 14 μm band-pass 7 Transmittance (%) μm band-pass T (reference) 4.3 μm band-pass T (CO2) T Si μm band-pass T KIRDB512EB 13 Infrared detectors

19 Two-color detectors Two-color detectors use a combination of two light sensors with different spectral response, in which one sensor is mounted over the other sensor along the same optical axis to provide a broad spectral response range. Thermoelectrically cooled two-color detectors are also provided that cool the sensors to maintain their temperatures constant, allowing high precision measurement with an improved S/N. (Typ.) Cooling Detector K K K K Non-cooled sensitive area Spectral response range λ Peak sensitivity λp sensitivity S (A/W) Si to InAsSb Si to InGaAs ϕ Si to InGaAs ϕ Si to InGaAs ϕ Package TO-5 Option (sold separately) C9329 C (P.22) C9329 C (P.21) K1198-1K K K K K K K K One-stage (Tchip=-1 C) Non-cooled InGaAs to C (P.21) InGaAs ϕ Si to InGaAs ϕ Si to InGaAs ϕ Si to InGaAs ϕ Si to InGaAs ϕ InGaAs to InGaAs ϕ TO-8 Ceramic C9329 C (P.21) A (P.19) C113-4 (P.18) C9329 C (P.21) K [ Si photodiode ] [ InAsSb photovoltaic detector ].7 (Typ. Ta=25 C) 1 9 (Typ. Ta=25 C).6 sensitivity (A/W) D* (cm Hz 1/2 /W) KIRDB199EA KIRDB623EA Infrared detectors 14

20 K1713-5/-8/-9 [ Si photodiode ] [ InGaAs PIN photodiode ].7 (Typ. Ta=25 C).7 (Typ. Ta=25 C).6.6 sensitivity (A/W) sensitivity (A/W) K K1713-5/ KIRDB199EA KIRDB211EA K3413-5/-8/-9 [ Si photodiode ] [ InGaAs PIN photodiode ].7 (Typ. Ta=25 C).7 (Typ. Td=-1 C).6.6 sensitivity (A/W) sensitivity (A/W) K K3413-5/ KIRDB199EA KIRDB212EA K1198-1K, K K K K (Typ. Ta=25 C).7 (Typ. Ta=25 C) 1..6 sensitivity (A/W) InGaAs (λc=1.7 μm) InGaAs (λc=2.55 μm) sensitivity (A/W) Si InGaAs KIRDB479EB KIRDB598EB 15 Infrared detectors

21 n drag detector The photon drag detector makes use of the photon drag effect in which holes created in a semiconductor by incident photons are dragged along in the direction of the photons, generating an electromotive force. Because of its sensitivity at 1.6 μm, this detector is suitable for detection of CO2 lasers. The surface of the detector element is coated with a non-reflective material. The C is a infrared detector module with preamp designed to detect infrared light by connecting to a DC power supply. Non-cooled type (Typ.) Cooling sensitive area Peak sensitivity λp sensitivity S λ=1.6 µm (V/W) Magnet stand (sold separately) B749 ϕ A1447 Non-cooled 1.6 C ϕ Dimensional outlines (unit: mm, tolerance unless otherwise noted: ±1) B749 C ± ± ±.2 (4 ) M3 Depth ±.5 sensitive area 2 1/4-2UNC BNC connector KIRDA16EE 13.2 ± ±.2 Window 4.6 ± sensitive surface ± Magnet stand A1447 1/4-2UNC 2 16 min. 23 max Plug Threaded hole (5 ) M3 Depth 5 24 ±.2 KIRDA231EA Pin no. Pin connection Vcc=+15 V GND GND Vcc=-15 V 4-pin connector (voltage input) BNC connector (signal output) Lead color White Blue/white stranded wire Blue Tolerance unless otherwise noted: ±1 KIRDA17EA Infrared detectors 16

22 Accessories for infrared detectors Hamamatsu provides following accessories for infrared detectors. Temperature controllers (P.18) Heatsinks for detector (P.19) Chopper (P.2) Amplifiers for infrared detectors (P.21) A connection example is shown below. Connection example * 1 Power supply (±15 V) Chopper C4696 detector* 3 Heatsink for detector A3179 series * 2 POWER OUT Amplifier for infrared detector* 4 C4159/C5185 series C Measuring instrument Power supply (1 V, 115 V, 23 V) ûc GND +12 V POWER CHOPPER TRIG * 3 Chopper driver circuit (accessory of the C4696) Temperature controller C113 series Power supply (+12 V) KACCC321ED Cable no. Cable Length approx. Coaxial cable (for signal) 2 m 4-conductor cable (with a connector) A Power supply cable (with a 4-conductor connector) A m 2 m BNC connector cable E m Option Power supply cable (for temperature controller) Chopper driver cable (connected to chopper) 2-conductor cable or coaxial cable (for chopper power supply) Note Supplied with heatsink A3179 series. When using this cable, make it as short as possible (preferably approx. 1 cm). Supplied with temperature controller C113 series. This cable is also sold separately. This cable is supplied with the C4159 series, C amplifiers for infrared detectors, and infrared detector modules with preamps (room temperature type). This cable is also sold separately. Besides this cable, the A4372-3, which is a power supply cable (with a 6-conductor connector) supplied with infrared detector modules with preamps ( type), is also sold separately. 1.9 m Supplied with temperature controller C113 series 2 m Connected to chopper driver circuit 2 m or less Prepared by user *1: Attach the bare wire ends to a 3-pin or 4-pin connector or to a banana jack, and then connect them to the power supply. *2: Soldering is needed. When using the C amplifier, a BNC connector (prepared by the user, example: one end of the E2573) is required. *3: No socket is available. Soldering is needed. Note: Refer to the datasheet "Accessories for infrared detectors" for detailed information about cables. 17 Infrared detectors

23 Accessories for infrared detectors Temperature controllers C113 series The C113 series is a temperature controller designed for infrared detectors. The C113 series allows temperature setting for the TE-cooler mounted in an infrared detector. Specifications Parameter C113-4 C113-5 C113-7 Applicable detector* 4 One-stage/two-stage type InAsSb, InAs photovoltaic detectors, InGaAs, Si photodiodes Two-stage/three-stage type InSb photoconductive detectors One-stage type InSb photoconductive detectors Setting element temperature -3 to +2 C -75 to -25 C -3 to +2 C Temperature stability Within ±.1 C Temperature control output current 1.1 A min., A typ., 1.3 A max. Power supply 1 V ± 1% 5/6 Hz* 5 Power consumption 3 W Dimensions 17 (W) 87 (H) 19 (D) mm Weight Approx. 1.9 kg Operating temperature +1 to +4 C Operating humidity 9% max. Storage temperature* 6-2 to +4 C Accessories Instruction manual 4-conductor cable (with a connector, 3 m) A4372-5* 7, power supply cable *4: It does not correspond to type infrared detector module with preamp. *5: Please specify power supply requirement (AC line voltage) from among 1 V, 115 V and 23 V when ordering. *6: No dew condensation When there is a temperature difference between a product and the surrounding area in high humidity environment, dew condensation may occur on the product surface. Dew condensation on the product may cause deterioration in characteristics and reliability. *7: When used in combination with the A3179 series heatsink, do not use the 4-conductor cable supplied with the A3179 series, but use the A instead. Block diagram C113 series detector Thermistor Comparator Amp circuit Current circuit element Power supply AC input KIRDC8EB Valve operator for metal dewar A3515 With this valve operator, metal dewars can be re-evacuated to maintain the desired vacuum level. Refer to the instruction manual for details. Please be aware that the detector performance is not guaranteed after re-evacuation is performed with the valve operator. Vaccum pump Valve operator Metal dewar type detector Dimensional outline (unit: mm) Pump tube 9.5 ±.5 Gland nut Leak mount Knob O-ring 8. ± 1 (closed) 115. ± 1 (open) KIRDA21EC Infrared detectors 18

24 Heatsinks for detectors (TO-8, TO-3 package) A3179 series These heatsinks are designed for use with thermoelectrically cooled detector sealed in a 6-pin TO-8, TO-3 package. The cooling (heat dissipation) capacity of the A3179 and A is approx. 35 C relative to the ambient temperature 25 C, the A is approx. 4 C, and that of the A is approx. 85 C. The A is designed only for two-color detector K3413 series, the A3179 for one-stage TO-8, the A for two-stage TO-8, the A for TO-3 (heatsink for TO-66 is available as a custom product.). Accessories Instruction manual 4-conductor cable (2 m): for TE-cooler and thermistor* 1 * 2 Coaxial cable (2 m): for signal* 2 *1: When used in combination with the C113 series temperature controller, do not use the 4-conductor cable supplied with the A3179 series, but use the 4-conductor cable A (sold separately, with a connector) that comes with the C113 series. *2: No socket is supplied for connection to infrared detectors. Connect infrared detectors by soldering. Cover the soldered joints and detector pins with vinyl insulating tubes. Dimensional outlines (unit: mm, tolerance unless otherwise noted: ±.3) A3179 A3179-1, A * 1.4 ±.3* 2 sensitive surface* 3 Detector metal package 32 (4 ) 3.5 * 1.4 ±.3* 2 sensitive surface* 3 Detector metal package 32 (4 ) ± ± ± ± B Weight: approx. 5 g *1: Bottom surface (reference surface) of detector metal package *2: When the detector is installed *3: The position of the photosensitive surface differs according to the detector used. Refer to the dimensional outline for the detector. KIRDA18EE 36 A3179-1: B=6 A3179-3: B=6.4 Weight: approx. 53 g *1: Bottom surface (reference surface) of detector metal package *2: When detector is installed *3: The position of the photosensitive surface differs according to the detector used. Refer to the dimensional outline for the detector. KIRDA19EE A ±.3 3 ±.5 Fixation board (4 ) 3.5 ±.5 38 ± ±.5 45 sensitive surface ±.3 8 Weight: approx. 32 g KIRDA149EC 19 Infrared detectors

25 Accessories for infrared detectors Chopper C4696 Specifications Parameter Specification Chopping frequency 115 to 38 Hz, 345 Hz typ.* 3 Operating voltage VD DC 5 to 13 V, 12 V typ. Duty ratio 1:1 Rotational stability.6%/ C Sync signal VH Min. VD -.5 V (high level) Max. VD -.2 V Operating temperature to 5 C Maximum current consumption* 4 9 ma Accessories Magnet stand A1447 (see P.16), driver circuit *3: Chopping frequency will be 23 to 76 Hz when an optional disk is used. *4: VD=12 V Dimensional outline (unit: mm, tolerance unless otherwise noted: ±1) Chopping frequency vs. operating voltage <Chopper> 22.3 to (adjustable) Output window 8. A1447 (Magnet stand) Input window 4. 6-pin receptacle cord length 2 m (for connection to driver circuit) Chopping frequency (Hz) When used with optional disk C4696 (Typ.) Operating voltage (V) <Driver circuit> 6-pin connector KIRDB376EA GND COUNTER +12 V ON-OFF TRIG BNC KIRDA22EA Infrared detectors 2

26 Amplifiers for infrared detectors C4159 series, C These are low noise amplifiers for InSb, InAs, InAsSb, and InGaAs detectors Accessories Instruction manual Power cable (one end with 4-pin connector for connection to amplifier and the other end unterminated, 2 m) A Required power supply specifications C4159 series: ±15 V ±.5 C5185-2: ±15 V ±.5 Current capacity: 1.5 times or more of amplifier's maximum current consumption Ripple noise: 5 mvp-p or less Analog power supply only Recommended DC power supply (example): PW18-3AD (TEXIO) E362A, E363A (Agilent Technologies) Absolute maximum ratings (Ta=25 C) Parameter Value Unit Operating temperature to +4 C Storage temperature -2 to +7 C Amplifiers for photovoltaic detectors (Typ.) Parameter C C C C C Unit Applicable detector* 1 * 2 * 3 Conversion impedance Dewar type InSb (P5968-6, P5968-1) Dewar type InAsSb (P ) Non-cooled type InAsSb Dewar type InSb Dewar type InAs (P CA, P MA) Non-cooled type InAsSb (P MA) type InAsSb (P MA) (P5968-2) (P7163) 1 8, 1 7, 1 6 (3 ranges switchable) 2 1 7, 2 1 6, (3 ranges switchable) 1 8, 1 7, 1 6 (3 ranges switchable) type InAs (P19-11/-21) Non-cooled type InAs (P19-1) type InAsSb (P , P ) 1 6, 1 5, 1 4 (3 ranges switchable) Frequency response (amp only, -3 db) DC to 1 khz* 4 DC to 45 khz DC to 15 khz DC to 1 khz - Output impedance 5 Ω Maximum output voltage (1 kω load) +1 ±1 V Output offset voltage ±5 ±1 ±5 mv Equivalent input noise current* 5 (f=1 khz).15 (1 8, 1 7 range).65 (1 6 range) (1 8, 1 7 range).65 (1 6 range) - V/A 6 1 pa/hz 1/2 Reverse voltage Limited to V operation - External power supply* 6 ±15 V Current consumption +3, -1 max. +3, -22 max. ma Amplifiers for InGaAs PIN photodiodes (Typ.) Parameter C Unit Applicable detector* 1 * 2 InGaAs - Conversion impedance 1 7, 1 6, 1 5 (3 ranges switchable) Frequency response (amp only, -3 db) DC to 15 khz - Output impedance 5 Ω V/A Maximum output voltage (1 kω load) +1 V Output offset voltage ±5 mv Equivalent input noise current (f=1 khz) 2.5 pa/hz 1/2 Reverse voltage Can be applied from external unit - External power supply* 6 ±15 V Current consumption ±15 max. ma Note: Output noise voltage = Equivalent input noise current Conversion impedance *1: These amplifiers cannot operate multiple detectors. *2: Consult us before purchasing if you want to use with a detector other than listed here. *3: Consult us before purchasing if you want to use with a multi-element detector. *4: When connected to a detector, frequency response becomes 6 khz or less depending on the detector photosensitive area. (ϕ.6 mm: 6 khz or less, ϕ1 mm: 25 khz or less) Ringing occurs in the output if the rise time tr ( to 9%) of incident light is approximately 1 μs or less. The ringing becomes larger as the rise time becomes shorter. No ringing occurs when detecting sine-wave light. (For information on the ringing specifications, refer to the datasheet "Amplifier for infrared detector".) *5: Input resistance: 1 MΩ (C4159-1/-4/-5), 5 Ω (C4159-6/-7) *6: Recommended DC power supply (analog power supply): ±15 V Current capacity: More than 1.5 times the maximum current consumption Ripple noise: 5 mvp-p or less 21 Infrared detectors

27 Amplifiers for photoconductive detectors (Typ.)* 7 Accessories for infrared detectors Parameter C Unit Applicable detector* 8 * 9 * 1 InSb (P666 series) - Input impedance 5 kω Voltage gain 66 ( 2) db Frequency response (amp only, -3 db) 5 Hz to 25 khz - Detector bias current 5 ma, 1 ma, 15 ma (3 ranges switchable) - Output impedance 5 Ω Maximum output voltage (1 kω load) ±1 V Equivalent input noise voltage (f=1 khz) 2.6* 11 nv/hz 1/2 External power supply* 12 ±15 V Current consumption +1, -3 max. ma Note: Output noise voltage = Equivalent input noise voltage Voltage gain *7: Before purchasing, make sure the bias current to the detector matches the detector bias current specified in the above table. *8: These amplifiers cannot operate multiple detectors. *9: Consult us before purchasing if you want to use with a detector other than listed here. *1: Consult us before purchasing if you want to use with a multi-element detector. *11: At the maximum detector bias current *12: Recommended DC power supply (analog power supply): ±15 V Current capacity: More than 1.5 times the maximum current consumption Ripple noise: 5 mvp-p or less Dimensional outlines (unit: mm, tolerance unless otherwise noted: ±1) C4159-1/-3/-4/-5/-6/-7 C pin connector pin connector Offset voltage adjusting screw PREAMPLIFIER POWER HIGH MID IN LOW OUT Gain adjusting screw BNC connector BNC PREAMPLIFIER POWER HIGH MID IN LOW OUT Bias adjusting screw BNC connector 18 2 KIRDA48EA Solder leads to these terminals. Pin connections GND Cathode Anode Note: Socket for lead attachment is not provided. KIRDA46EC Infrared detectors 22

28 Description of terms 23 Infrared detectors Dark resistance: Rd This is the resistance of a photoconductive detector in the dark state. Dark current: ID The dark current is the small current which flows when a reverse voltage is applied to a photovoltaic detector (InGaAs, InAs, InSb, etc.) under dark conditions. This is a factor for determining the lower limit of light detection. FOV (field of view) The field of view is related to the background radiation noise and greatly influences the value of D*. Offset voltage This is DC output voltage of an amplifier when the input signal is zero. sensitivity: S This is the detector output per watt of incident light at a given. The unit is usually expressed in V/W for photoconductive and in A/W for photovoltaic detectors. For photon drag detectors, this is represented as the output voltage with respect to incident pulsed energy of 1 kw radiated from a CO2 laser. voltaic detector (photodiode) This is a semiconductor detector that generates electrical current or voltage when light enters its PN junction. Detector materials include InGaAs, InAs, InAsSb, and InSb. conductive detector This is a semiconductor detector whose conductivity increases with increasing incident light. Peak sensitivity : λp This is the at which the sensitivity of the detector is at maximum. Reverse voltage (max.): VR max, supply voltage Applying a reverse voltage to a photovoltaic detector (or applying a voltage to a photoconductive detector) triggers a breakdown at a certain voltage and causes severe deterioration of the detector performance. Therefore the absolute maximum rating for the voltage is specified at the voltage somewhat lower than this breakdown voltage. Do not apply a voltage higher than the maximum rating. Allowable current (max.) This is a maximum value of current which can be used when photoconductive detectors are operated. When the supply current is higher than the maximum allowable current, the detector performance may deteriorate, therefore, excessive current must be avoided. NEP (noise equivalent power) This is the radiant power that produces S/N of 1 at the detector output. At HAMAMATSU we list the NEP measured at the peak sensitivity (λp). Since the noise level is proportional to the square root of the frequency bandwidth, the NEP is normalized to a bandwidth of 1 Hz. NEP [W/Hz 1/2 ] = Noise current [A/Hz 1/2 ] sensitivity [A/W] at λp Cutoff frequency: fc This is the frequency at which the output decreases 3 db from the steady output level. The cutoff frequency (fc) is related to rise time (tr: time required for the output to rise from 1% to 9% of the maximum output value) as follows: tr [s] =.35 fc [Hz] Rise time: tr This is the value of a detector time response to a stepped light input, and defined as the time required for transition from 1% to 9% (or to 63%) of the maximum (constant) output value. The light sources used are GaAs LED (.92 μm), laser diode (1.3 μm), etc. Terminal capacitance: Ct An effective capacitor is formed at the PN junction of a photovoltaic detector. Its capacitance is termed the junction capacitance and is one of the parameters that determine the response speed of the photovoltaic detector. And it can cause the phenomenon of gain peaking in I-V conversion circuit using op amp. In Hamamatsu, the terminal capacitance including this junction capacitance plus package stray capacitance is listed. Short circuit current: Isc The short circuit current is the output current which flows when the load resistance is and is nearly proportional to the device photosensitive area. This is often called white light sensitivity with regards to the spectral response. This value is measured with light from a tungsten lamp of 2856 K distribution temperature (color temperature), providing 1 lx illuminance. Cutoff : λc This represents the long limit of spectral response and in datasheets is listed as the at which the sensitivity becomes 1% of the value at the peak sensitivity. Chopping frequency In the measurement of infrared detector sensitivity, an optical chopper is often used to perform on-off operation of incident light. This is the frequency of the chopper. D* (D-star: Detectivity) D* is the detectivity indicating the S/N in an AC signal obtained by a detector when radiant energy of 1 W is input to the detector. D* is normalized to a detector area of 1 cm 2 and a noise bandwidth of 1 Hz, to allow comparing of characteristics of detector materials independent of the detector area. D* is usually represented as D* (A, B, C), in which A is the light source temperature [K] or [μm], B is the chopping frequency [Hz], and C is the noise bandwidth [Hz]. D* is expressed in units of cm Hz 1/2 /W, and the higher the D*, the better the detector. D* is given by the following equation. S/N Δf1/2 D* = P A 1/2 where S is the signal, N is the noise, P is the incident energy in [W/cm 2 ], A is the photosensitive area in [cm 2 ] and Δf is the noise bandwidth in [Hz]. The following relation is established by D* and NEP. D* = A1/2 NEP Noise: N The noise is the output voltage from a photoconductive detector operated under specified conditions and 3 K background radiations. Shunt resistance: Rsh This shunt resistance is the voltage-to-current ratio in the vicinity of V in photovoltaic detectors and defined as follows: Where ID is the dark current at reverse voltage=1 mv. 1 [mv] Rsh [Ω] = ID [A] For applications where no reverse voltage is applied, noise resulting from the shunt resistance becomes predominant. Quantum efficiency: QE The quantum efficiency is the number of electrons or holes that can be detected as a photocurrent, divided by the number of incident photons. This is commonly expressed in percent [%]. The quantum efficiency and photosensitivity S have the following relationship at a given [nm]: S 124 QE = 1 [%] λ

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31 Disclaimer Products manufactured by Hamamatsu nics K.K. (hereafter Hamamatsu ) are intended for use in general-use electronic devices (such as measurement equipment, office equipment, information communications equipment, household appliances, etc.). Unless an exception to the following is stated in the documentation of a specific product, Hamamatsu products are not to be used for special applications which demand extremely high reliability or safety (such as equipment for nuclear power control, aerospace equipment, medical equipment and transportation equipment that directly affect human life, or disaster prevention or safety equipment). Hamamatsu products should not be used in excess of their absolute maximum ratings. Attention must be paid to all documented precautions. Hamamatsu continually makes efforts to improve the quality and reliability of its products; however these efforts cannot ensure 1% compliance with the manufacturing specifications. Sufficient safety design (such as redundant safety, fire preventative, and malfunction preventative features) are to be implemented in the development of equipment manufactured with the Hamamatsu product so that personal injury, fire, or damage to public property or welfare does not occur in the unlikely event of a malfunction of the Hamamatsu product. A dangerous condition could be created if sufficient consideration is not given to safety design that addresses potential problems, especially in the design of equipment where the failure or malfunction of the Hamamatsu product within the equipment could result in bodily harm, life-threatening injury, or serious property damage during the use of the equipment. With such types of equipment, Hamamatsu shall not be responsible for the use of its products within the equipment in any way for not obtaining our written consent such as specification sheets beforehand. Appropriate descriptions of the functions, performance, and methods of operation of the Hamamatsu product and the equipment within which the Hamamatsu product is incorporated are to be provided to end-users of the equipment. All accompanying warnings and cautionary labeling are also to be provided to the end-user. Warranty of the Hamamatsu product is limited to the repair or replacement of a product in which a defect is discovered within 1 year of delivery of the product and notification is made to Hamamatsu within that period, otherwise certain warranty is specified. However, even within the warranty period Hamamatsu shall not be responsible for damages caused by either natural disaster or improper use of the product (such as modification of the product or any use that contravenes the operating conditions, intended applications, operating instructions, storage method, disposal method, or any other term or condition described in our products documents). For a complete description of the warranty associated with a particular product, please contact your regional Hamamatsu sales office. Exportation of some Hamamatsu products must comply with individual governmental regulations pertaining to export control. Export in contravention of governmental regulations is a crime and can result in severe monetary penalties or imprisonment. While we cannot give any legal advice as to how to comply with these regulations, we can help classify the goods in order to assist the buyer in determining what regulations apply. Please contact your regional Hamamatsu sales office for further assistance. In our products documents, applications are mentioned as notable examples of how the Hamamatsu product can be used. Such mentions guarantee neither the suitability of the product for specific purposes nor the success or failure of the commercial use of the product in specific applications. Some applications may be protected by patents or other proprietary rights. Hamamatsu assumes no liability for any infringing use of our products. All warranties express or implied, including any warranty of merchantability or fitness for any particular purpose are hereby excluded. Product specifications are subject to change without notification due to product improvements, etc. Our products documents have been carefully prepared to ensure the accuracy of the technical information contained herein, but in rare cases there may be errors. When using the Hamamatsu product, please be sure to request the delivery specification sheets, and confirm upon delivery that it is the most recent specifications. In addition to this document, please be sure to read any accompanying technical documentation and make note of any precautions listed in the delivery specification sheets. All Rights Reserved, transfer or duplication of the contents of our products documents without the permission of Hamamatsu is prohibited.

32 HAMAMATSU PHOTONICS K.K., Solid State Division , Ichino-cho, Higashi-ku, Hamamatsu City, , Japan Telephone: (81) , Fax: (81) Main Products Si photodiodes APD IC Image sensors X-ray flat panel sensors PSD Infrared detectors LED Optical communication devices Automotive devices Mini-spectrometers High energy particle/x-ray detectors Opto-semiconductor modules Hamamatsu also supplies: electric tubes Imaging tubes Light sources Imaging and processing systems Information in this catalogue is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. 217 Hamamatsu nics K.K. Quality, technology, and service are part of every product. Sales Offices Japan: HAMAMATSU PHOTONICS K.K , Sunayama-cho, Naka-ku, Hamamatsu City, Shizuoka Pref , Japan Telephone: (81) , Fax: (81) China: HAMAMATSU PHOTONICS (CHINA) Co., Ltd. Main Office 121 Tower B, Jiaming Center, 27 Dongsanhuan Beilu, Chaoyang District, 12 Beijing, China Telephone: (86) , Fax: (86) Shanghai Branch 495 Wheelock Square, 1717 Nanjing Road West, Jingan District, 24 Shanghai, China Telephone: (86) , Fax: (86) Taiwan: HAMAMATSU PHOTONICS TAIWAN Co., Ltd. Main Office 8F-3, No.158, Section2, Gongdao 5th Road, East District, Hsinchu, 3, Taiwan R.O.C. Telephone: (886) , Fax: (886) Kaohsiung Office No.6, Central 6th Road, K.E.P.Z. Kaohsiung 86, Taiwan R.O.C. Telephone: (886) , Fax: (886) U.S.A.: HAMAMATSU CORPORATION Main Office 36 Foothill Road, Bridgewater, NJ 887, U.S.A. Telephone: (1) , Fax: (1) California Office 2875 Moorpark Ave. San Jose, CA 95128, U.S.A. Telephone: (1) , Fax: (1) Chicago Office 4711 Golf Road, Suite 85, Skokie, IL 676, U.S.A. Telephone: (1) , Fax: (1) Boston Office 2 Park Plaza, Suite 312, Boston, MA 2116, U.S.A. Telephone: (1) , Fax: (1) usa@hamamatsu.com United Kingdom: HAMAMATSU PHOTONICS UK Limited Main Office 2 Howard Court, 1 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, UK Telephone: (44) , Fax: (44) info@hamamatsu.co.uk South Africa Office: 9 Beukes Avenue, Highway Gardens, Edenvale, 169, South Africa Telephone/Fax: (27) France, Portugal, Belgium, Switzerland, Spain: HAMAMATSU PHOTONICS FRANCE S.A.R.L. Main Office 19, Rue du Saule Trapu Parc du Moulin de Massy, Massy Cedex, France Telephone: (33) , Fax: (33) infos@hamamatsu.fr Swiss Office Dornacherplatz 7 45 Solothurn, Switzerland Telephone: (41) , Fax: (41) swiss@hamamatsu.ch Belgian Office Axisparc Technology, rue Andre Dumont Mont-Saint-Guibert, Belgium Telephone: (32) , Fax: (32) info@hamamatsu.be Spanish Office C. Argenters, 4 edif 2 Parque Tecnológico del Vallés 829 Cerdanyola (Barcelona), Spain Telephone: (34) , Fax: (34) infospain@hamamatsu.es Germany, Denmark, The Netherlands, Poland: HAMAMATSU PHOTONICS DEUTSCHLAND GmbH Main Office Arzbergerstr. 1, D Herrsching am Ammersee, Germany Telephone: (49) , Fax: (49) info@hamamatsu.de Danish Office Lautruphøj 1-3, DK-275 Ballerup, Denmark Telephone: (45) , Fax: (45) info@hamamatsu.dk Netherlands Office Televisieweg 2, NL-1322 AC Almere, The Netherlands Telephone: (31) , Fax: (31) info@hamamatsu.nl Poland Office Warsaw, 8 St. A. Boboli Str., Poland Telephone: (48) , Fax: (48) poland@hamamatsu.de North Europe and CIS: HAMAMATSU PHOTONICS NORDEN AB Main Office Torshamnsgatan Kista, Sweden Telephone: (46) , Fax: (46) info@hamamatsu.se Russian Office 11, Christoprudny Boulevard, Building 1, Office 114, 11, Moscow, Russia Telephone: (7) , Fax: (7) info@hamamatsu.ru Italy: HAMAMATSU PHOTONICS ITALIA S.r.l. Main Office Strada della Moia, 1 int. 6, 22 Arese (Milano), Italy Telephone: (39) , Fax: (39) info@hamamatsu.it Rome Office Viale Cesare Pavese, 435, 144 Roma, Italy Telephone: (39) , Fax: (39) inforoma@hamamatsu.it Cat. No. KIRD1E11 Sep. 217 DN Printed in Japan