E Wired Intruder Detector

Transcription

1 E93.97 Wired Intruder Detector JAN 3, 05 Description The E93.97 is very suitable for applications in wired intruder detectors. It works with all popular conventional analog PIR detectors. No false alarms Detection of humans Adjustable detection range Reliable operation The E93.97 based intruder detector requires very few additional components. There are no electrolytic capacitors in the signal path. The unit will not show any noticeable drift or aging. The signal processing inside the E93.97 is digital. To avoid false alarms, the unit should not face moving curtains, sunlight and must not be exposed to sudden temperature changes or hot and cold air movement. The type of lens, the mounting height, the enclosure and the insulation against temperature changes of the detector have the most influence on avoiding false trigger. D V SN4007 R 8.k D RLS446T RE RELAY-SPST CON R3.k R9.k CON V C 00n PIR LHI968 C4 0n C 0µ/ 6V C3 470n R 00k C5 00n R8.M R ENVREG 9 PIRIN 4 E OEN REL 3 LED 6 SENS J3 R6 70k R4 k J4 Q L L3 USE REL L4 L CON3 J5 USE LED NPIRIN 5 ONTIME 3 4 R RV3 0k RV 0k REL R4 k Q3 LED R7 k Q Figure. Schematic for Wired Intruder Detector Functional Description Figure depicts the circuit of a wired intruder detector based on the E Elmos Semiconductor AG Application Note QM-No.: 5AN0047E.00 /5

2 E93.97 Wired Intruder Detector JAN 3, 05 3 Module Supply An unregulated DC supply voltage is connected to CON. The voltage range can be between 9V and 8V. Different voltage ranges con be accommodated with different resistor values for R. Varistor V protects the module against high voltage surges, which may occur with long wires and close proximity lightning. Diode D protects the module against reverse polarity connection. The E93.97 contains a shunt regulator, which generates a stable supply voltage of 3V for the analog PIR detector and the integrated circuit. The resistor value of R is defined by the input voltage range (UV) and the total current consumption on. Capacitors C5 and C are supply bypass capacitors to eliminate transients on the supply voltage of the E93.97 and the PIR detector. Capacitor C is required for the regulator and should have a capacity of at least 4µF. 4 PIR Signal Processing The passive infrared detector PIR generates an output signal on node PIRO, as a result of movement detected in front of the lens. The value of the voltage depends on the temperature difference of the object to its environment, the size of the object and the distance. Typical voltages are 00µV..mV. All applications require a lens in front of the detector (Fresnel lens) in order to obtain useful output signals. The value for the resistor R is chosen according to the manufacturer of the PIR detector. Most detectors work with resistor values between 47k and Meg. The user compromises between performance and current consumption. The capacitor C4 reduces the sensitivity against RF. It has to be placed as close as possible to the detector. R is a 0 Ohm jumper and can be a track on the PCB. The connection NPIRIN to should be at the GND pin of the PIR detector. The capacitor C3 together with resistor R8 removes any DC content from the signal before it is applied to the E93.97 PIR controller. The signal is immediately converted to a digital signal inside the E All further signal processing is digital. 5 Motion Detection and Indication The PIR signal is processed with a digital band pass filter, which removes unwanted frequency content. For motion detection, the voltage on the filter output has to exceed the selected threshold twice within 4 seconds and change sign in between. This criteria is hardwired internally and prevents false detection. 6 Sensitivity and On-time The parameters for detection sensitivity and on time of the relay output can be defined by the user. The DC voltages applied to the corresponding inputs SENS and ONTIME are measured by the E93.97 and used for threshold and timer. A higher voltage on the SENS input translates into a higher detection threshold and therefore a shorter detection range. A higher voltage on the ONTIME input causes longer on-times. 7 Output Enable The OEN input is permanently connected to. If motion detection should be active depending on ambient light conditions, once would need to connect a daylight sensor (LDR) to this input. 8 LED Output The LED output of the E93.97 is active (high), whenever the Signal from the PIR detector is above the threshold defined on the SENS pin. 9 Relay Switching The unit can be configured for normally open relays, where the coil needs to be driven permanently (J3 to and J4 to REL). In cases of power failure and motion detection, the relay contacts will open and the alarm panel will act accordingly. Elmos Semiconductor AG Application Note QM-No.: 5AN0047E.00 /5

3 E93.97 Wired Intruder Detector JAN 3, 05 0 Auxiliary Output Connector The unit contains an open collector output (CON3). Depending on Jumper J5, the user can choose between LED and REL output from the E93.97 or inactive (no Jumper fitted). Calculation of Component Values R6, RV,RV3: / (+ R6/(RV//RV3)) must yield slightly more that 0.5 to ensure full range for Sensitivity and On Time. Choose preferred value for RV3 and RV first. R4 < R(relay coil) * ß(Q) R4 < (-4/) * R3* ß(Q3) R7 < R3* ß(Q) R = 47k to Meg, power consumption is uncritical in this application. R8 > 5 * R C3 = /(*π*fo*r8), fo = cut off frequency (0.Hz) R < (V-3V)/Imax Imax = I(U)+I(R)+I(R6)+I(R4)+I(R4)+I(R7)+00µA Not Populated Components The application PCB allows different functional options for demonstration purposes. It contains footprints for additional components (X), which may be populated after corresponding components are removed. D V SN4007 R 8.k D RLS446T RE RELAY-SPST CON R3.k R9.k CON V C 00n PIR LHI968 C4 0n C 0µ/ 6V C3 470n R 00k C5 00n R8.M R ENVREG 9 PIRIN 4 E OEN REL 3 LED 6 SENS J3 R6 70k R4 k J4 Q L L3 USE REL L4 L CON3 J5 USE LED NPIRIN 5 ONTIME 3 4 R RV3 0k RV 0k REL R4 k Q3 LED R7 k Q Figure. Complete PCB Schematic Elmos Semiconductor AG Application Note QM-No.: 5AN0047E.00 3/5

4 E93.97 Wired Intruder Detector JAN 3, 05 3 PCB Top View Small PIR lens to be removed when used in enclosure provided On-time: CCW=minimum R0 Disable regulator R Enable regulator Only one of the resistors can be fitted at a time E93.97A Low Power PIR controller IC Sensitivity: CW=Less Sensitivity R is used with regulator R5 can be used for direct 3V Use REL or LED signals for the AUX output Supply connections Relay Mode: Normally Closed Relay outputs for alarm loop Normally Open CW = Clockwise CCW = Count Clockwise Figure 3. PCB Layout Figure 4. PCB Elmos Semiconductor AG Application Note QM-No.: 5AN0047E.00 4/5

5 E93.97 Wired Intruder Detector JAN 3, 05 WARNING Life Support Applications Policy Elmos Semiconductor AG is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing Elmos Semiconductor AG products, to observe standards of safety, and to avoid situations in which malfunction or failure of an Elmos Semiconductor AG Product could cause loss of human life, body injury or damage to property. In the development of your design, please ensure that Elmos Semiconductor AG products are used within specified operating ranges as set forth in the most recent product specifications. General Disclaimer Information furnished by Elmos Semiconductor AG is believed to be accurate and reliable. However, no responsibility is assumed by Elmos Semiconductor AG for its use, nor for any infringements of patents or other rights of third parties, which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Elmos Semiconductor AG. Elmos Semiconductor AG reserves the right to make changes to this document or the products contained therein without prior notice, to improve performance, reliability, or manufacturability. Application Disclaimer Circuit diagrams may contain components not manufactured by Elmos Semiconductor AG, which are included as means of illustrating typical applications. Consequently, complete information sufficient for construction purposes is not necessarily given. The information in the application examples has been carefully checked and is believed to be entirely reliable. However, no responsibility is assumed for inaccuracies. Furthermore, such information does not convey to the purchaser of the semiconductor devices described any license under the patent rights of Elmos Semiconductor AG or others. Contact Information Headquarters Elmos Semiconductor AG Heinrich-Hertz-Str. D-447 Dortmund (Germany) : : sales-germany@elmos.com : Sales and Application Support Office North America Elmos NA. Inc. 355 Northwestern Highway Suite 0 Farmington Hills MI (USA) : : sales-usa@elmos.com Sales and Application Support Office China Elmos Semiconductor Technology (Shanghai) Co., Ltd. Unit 6B, 6F Zhao Feng World Trade Building, No. 369 Jiang Su Road, Chang Ning District, Shanghai, PR China, : : sales-china@elmos.com Sales and Application Support Office Korea Elmos Korea B-007, U-Space, #670 Daewangpangyo-ro, Sampyoung-dong, Bunddang-gu, Sungnam-si Kyounggi-do Korea : : sales-korea@elmos.com Sales and Application Support Office Japan Elmos Japan K.K. BR Shibaura N Bldg. 7F Shibaura, Minato-ku, Tokyo Japan : : sales-japan@elmos.com Sales and Application Support Office Singapore Elmos Semiconductor Singapore Pte Ltd. 3A International Business Park #09-3 ICON@IBP Singapore : : sales-singapore@elmos.com Elmos Semiconductor AG, 04. Reproduction, in part or whole, without the prior written consent of Elmos Semiconductor AG, is prohibited. Elmos Semiconductor AG Application Note QM-No.: 5AN0047E.00 5/5