E PIR Motion Detector. Features. General Description. Applications. Single Sensor Application Circuit

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1 E9.92 PIR Motion Detector Features Fully integrated PIR motion detector Digital signal processing On chip supply regulator with wide operating voltage range Low power consumption Temperature compensation input Differential PIR sensor input Selectable relay output polarity Selectable pulse count and timing algorithm for motion detection Applications PIR motion detection Intruder detection Occupancy detection Motion sensor lights General Description The E9.92 integrated circuit combines all required functions for a single chip Passive Infra Red (PIR) motion detector. A relay and a LED output are provided for interfacing to an occupancy detect or alarm system. One or two PIR sensors can be connected directly to the PIR inputs. The pull-down resistors and DC decoupling circuitry are integrated on chip. Internally, the PIR sensor signal is converted to a 5 bit digital value. The parameters for sensitivity, pulse count and timing are set by means of connecting the corresponding inputs to, or leaving them open. The voltage level on the temperature compensation input is converted to a digital value with 4 bit resolution. All signal processing is performed digitally. Single Sensor Application Circuit C2 4 U A VB C D Supply IRA 2 A PIRIN LED 2 L R2 RE Alarm RELAY 9 Alarm 3 NPIRIN 2 Threshold/Sensitivity PT PT 5 4 PT PT SENS 3 Near Far S2 Pulse Count DP 7 DP RPOL TEST 8 9 C3 DP 6 DP 8 V Time Window DT DT 7 6 DT DT E9.92 TCOMP 5 N NTC R3 R4 R5 ELMOS Semiconductor AG Specification / 3 3SP359E

2 E9.92 Pinout. Pin Description Name Pin No. Description NC Not Connected V DD 2 Regulated supply voltage SENS 3 Range select PT 4 Sensitivity selection PT 5 Sensitivity selection DT 6 TRUE-ROLL TM time window select DT 7 TRUE-ROLL TM time window select RPOL 8 RELAY Pin polarity selection TEST 9 Reserved, connect to V SS VB Unregulated supply voltage V DDA Regulated supply voltage, only connect PIR element to this pin PIRIN 2 PIR sensor input NPIRIN 3 Negative PIR sensor input V SSA 4 Negative supply voltage, only connect PIR element to this pin TCOMP 5 Temperature Compensation Input DP 6 Pulse count selector DP 7 Pulse count selector V SS 8 Negative supply voltage RELAY 9 Relay Output (open drain) LED 2 LED Output (open drain) Table: Device Pin Out.2 Package Pinout NC SENS PT PT DT DT RPOL TEST VB E9.92 Figure.2-: Pinout LED RELAY DP DP TCOMP A NPIRIN PIRIN A ELMOS Semiconductor AG Specification 2 / 3 3SP359E

3 E Operating Conditions 2. Absolute Maximum Ratings Parameter Condition Symbol Min. Max. Unit Voltage on pin VB (Supply voltage) V B V Voltage on pins RELAY, LED V R -.3 V B V Current into any pin One pin at a time I IN - ma Junction Temperature T J 5 C Storage Temperature T STG C ESD ) V ESD 2, kv Table 2: Electrical Characteristics ) The ESD Protection circuitry is proved according to AEC Q (Human Body Model) with the following conditions : REXT = 5Ω CEXT = pf (Stresses beyond those listed above may cause permanent damage to the device. Exposure to absolute maximum ratings may affect the device reliability. 2.2 Recommended Operating Conditions The specified parameters are guaranteed within the range of operating conditions unless otherwise noted. Parameter Condition Symbol Min. Typ Max. Unit Temperature Operating temperature range C Regulator Supply voltage V B V Table3: Operating Conditions ELMOS Semiconductor AG Specification 3 / 3 3SP359E

4 E Detailed Electrical Specification Parameter Condition Symbol Min. Typ Max. Unit Regulator Supply current V B=2V Outputs unloaded I B 2 µa Regulator output voltage V DD V Digital Inputs, Schmitt-Triggers (DP/, PT/, DT/, SENS, TEST, RPOL) Input low voltage V IL 2 %V DD Input high voltage V IH 8 %V DD Pull down current on TEST Input to V DD 6 µa Digital Outputs RELAY sink capability (open drain) V OL<V I OL 22 ma LED sink capability (open drain) V OL<V I OL 22 ma TCOMP Input Input voltage range V DD Input leakage current - µa Input ADC range > V DD /4 saturates V DD/8 V DD/4 Input ADC resolution 4 Bits PIRIN / NPIRIN Inputs PIRIN /NPIRIN input resistance to V SS 8 KΩ PIRIN input DC voltage range V DD V PIRIN input AC voltage Peak-to-peak mv ADC Resolution count 4 µv Oscillator and Filter LPF cut-off frequency *) 7 Hz HPF cut-off frequency *).44 Hz Oscillator frequency F CLK 64 KHz System Clock frequency F C_G F CLK/2 Table 4: Detailed Electrical Specification *) Guaranteed by Design, not tested within production. All voltages are referred to GND, and currents are positive when flowing into the node unless otherwise specified. ELMOS Semiconductor AG Specification 4 / 3 3SP359E

5 E Functional Description The IC 9.92 is a fully integrated PIR motion detector, that allows to build an application with a minimum of external components. One or two PIR sensors can be connected directly to the IC. Due to the digital signal processing, a high insensitivity against external disturbances is achieved. All typical adjustable parameters, used at motion detection can be set reasonable by connecting the corresponding inputs to V DD or V SS. The also integrated temperature compensation and the possibility to drive directly an LED or a relay completes the functionality. Those features and the minimum demand on external components makes the E9.92 most suitable for high-end applications as well as for high-volume low-end applications. 4. Blockdiagram V SSA V DD V SS TC O MP RPOL PIRIN NPIRIN Input Amplifier A /D C onverter Band Pass Temperature C ompensation O utput Driv er LED RELA Y Filter V SSA SENS PT V B V oltage Regulator O scillator Threshold Detector Alarm Event Processor PT DP DP V DDA V SSA TEST DT DT Figure 4.-: Block Diagram 4.2 Voltage Regulator An on-chip voltage regulator generates a stable 4V supply for the internal circuitry. The unregulated input voltage on V B can range from 5V to 48V. The V DD and V B pin require a bypass capacitor to V SS. 4.3 Oscillator The IC contains an on chip low power oscillator. The frequency is set to 64kHz typical. The timing signals and cut-off frequencies of the digital filters are derived from this frequency. ELMOS Semiconductor AG Specification 5 / 3 3SP359E

6 E PIR Sensor Input A differential input stage allows up to 2 PIR sensors to be connected. The PIRIN and NPIRIN inputs have an internal pull-down resistor. The analog to digital converter generates a digital signal from the voltage level measured between the PIRIN and NPIRIN pins. 4.5 Band-Pass Filter A 2nd order low-pass filter with a cut-off frequency of 7Hz eliminates unwanted higher frequency components. This signal is then passed to a 2 nd order high pass filter with a.44hz cut-off frequency. 4.6 Alarm Event Processor When the PIR signal level (PIRIN-NPIRIN) exceeds the selected sensitivity threshold, an internal pulse is generated and the open drain LED output transistor is switched on. The LED output remains activated while the signal is above the selected sensitivity threshold. If immediate alarm mode (alarm on pulse count) is selected, then the RELAY output is activated on every pulse, for the duration, selected by DT and DT. If TRUE-ROLL TM alarm mode (alarm on more than pulse) is selected, a minimum number of pulses, selected with DT and DT, would have to appear within the selected TRUE-ROLL TM time window (alarm condition) to activate the RELAY output. The RELAY output stays active for the selected TRUE-ROLL TM time window. Once the RELAY output is activated, any further alarm condition detected within the selected TRUE- ROLL TM time window will restart the window timer. To avoid continues alarm, further pulses are only taken as valid and counted when the signal has changed the sign at least once before. RELAY: The polarity of the relay output (i.e. active high or active low), can be selected with the RPOL pin. RPOL Relay Output Active low Active high Table 5: Relay output polarity The pins to select the sensitivity threshold, the TRUE-ROLL TM time window and the PULSE count should typically hard wired by the PIR motion detector manufacturer. The SENS input can be connected to a jumper, which offers a sensitivity adjustment on site. The conditions required to raise an alarm, are controlled by the following digital inputs. These inputs must be connected to V DD ( ), V SS ( ) or left open (Z), as indicated in table 6. ELMOS Semiconductor AG Specification 6 / 3 3SP359E

7 E9.92 Pin Name Description PT Z Z Z DP DT SENS PT Z Z Z/ DP DT Selects the PIR controller s sensitivity threshold Sensitivity / units Sensitivity Threshold (SENS = ) x 4µV Most sensitive x 2 28µV x 4 56µV x 8 2µV x 6 224µV x µV x µV x mV Least sensitive Selects the amount of pulses required for an alarm condition. immediate alarm mode 2 TRUE-ROLL TM 3 alarm 4 mode Selects the TRUE-ROLL TM time window 2 s 4 s 8 s 6 s Connection to V DD doubles selected threshold Table 6: Alarm event processor input settings TCOMP: Temperature compensation input pin. A temperature dependent resistor network may be connected to this pin to generate voltages between V DD/8 and V DD/4. The voltage on this pin must decrease as the temperature increases. At 37 C, the voltage should be between V DD*9/28 and V DD*2/28. Internally, a TCOMP factor is selected, based on this pin voltage. This factor is multiplied with the sensitivity threshold. Table 7 shows the dependency of the pin voltage and the TCOMP factor used by the alarm event processor. Pin voltage/ V DD TCOMP factor Pin voltage/ V DD TCOMP Factor <6/28 7/8 24/28 8/8 7/28 6/8 25/28 9/8 8/28 5/8 26/28 /8 9/28 4/8 27/28 /8 2/28 4/8 28/28 2/8 2/28 5/8 29/28 3/8 22/28 6/8 3/28 4/8 23/28 7/8 >3/28 5/8 Table 7: Temperature compensation factor ELMOS Semiconductor AG Specification 7 / 3 3SP359E

8 E9.92 Example of TRUE-ROLL TM time window set to and pulse count to 3. + Threshold PIRIN-NPIRIN - Threshold LED ) 2) TRUE-ROLL TM (Time window) 3) 3) 6) 5) 5') 6) RELAY 4) ) Pulse not counted as valid since the PIR signal level has not changed its sign before 2) Pulse counted as valid since the PIR voltage has changed its sign between the last pulses 3) Third pulse within the TRUE-ROLL TM time window activates relay output 4) Relay output stays active for the set time window 5) Each new detected alarm condition (three pulses within the TRUE-ROLL TM time window) restarts the window timer and prolongs the relay activation (see 5') ) 6) Only two pulses within the TRUE-ROLL TM time window counted; no new alarm condition; the timer is not re-triggered. ELMOS Semiconductor AG Specification 8 / 3 3SP359E

9 E Application example IRA C2 4 2 U A A PIRIN VB LED 2 L R2 C D RE Supply Alarm RELAY 9 Alarm 3 NPIRIN 2 Threshold/Sensitivity PT 5 PT 4 PT PT SENS 3 Near Far S2 Pulse C ount DP DP 7 6 DP DP RPOL TEST C3 V Time Window DT DT 7 6 DT DT E9.92 TCOMP Figure 5-: Single Sensor Application Circuit 5 N NTC R3 R4 R5 5. Compenent Values Designator Description R2.2kΩ R3 8kΩ R4 33kΩ R5 8kΩ N 47kΩ NTC C µf/25v, electrolytic C2, C3 82nF, ceramic D N47, optional protection diode IRA LHI 878, PIR sensor Table 8: Component Values for Application Circuit ELMOS Semiconductor AG Specification 9 / 3 3SP359E

10 E Package 6. Marking 6.. Top Side ELMOS 992A XXX#YWW*@ where 992 ELMOS Project Descriptor A Version # Assembler Code YWW Year and Week of Assembly * Mask Revision ELMOS internal Marking 6..2 Bottom Side No Marking 6.2 Package Dimensions The IC E9.92 is assembled in a 2SOIC package. The package dimensions are according to JEDEC standard. The valid package specification can be downloaded under ELMOS Semiconductor AG Specification / 3 3SP359E

11 E Record of Revisions Chapter Rev. Change and Reason for Change Date Released all. Version Marking (2 nd line) changed from E9.92A to 992A Package Dimensions: Table exchanged against internet link ELMOS Customer ELMOS Semiconductor AG Specification / 3 3SP359E

12 E Index Table of Content Pinout...2. Pin Description Package Pinout Operating Conditions Absolute Maximum Ratings Recommended Operating Conditions Detailed Electrical Specification Functional Description Blockdiagram Voltage Regulator Oscillator PIR Sensor Input Band-Pass Filter Alarm Event Processor Application example Compenent Values Package Marking Top Side Bottom Side Package Dimensions... 7 Record of Revisions Index...3 ELMOS Semiconductor AG Specification 2 / 3 3SP359E

13 E9.92 WARNING Life Support Applications Policy ELMOS Semiconductor AG is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilising ELMOS Semiconductor AG products, to observe standards of safety, and to avoid situations in which malfunction or failure of a ELMOS Semiconductor AG Product could cause loss of human life, body injury or damage to property. In development your designs, please ensure that ELMOS Semiconductor AG products are used within specified operating ranges as set forth in the most recent products specifications. General Disclaimer Information furnished by ELMOS Semiconductor AG is believed to be accurate and reliable. However, no responsibility is assumed by ELMOS Semiconductor AG for its use, nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of ELMOS Semiconductor AG. All rights are reserved. Any duplication without prior written permission of ELMOS Semiconductor AG in whole or in part is prohibited. ELMOS Semiconductor AG reserves the right to make changes to this document or the products contained therein without prior notice, to improve performance, reliability, or manufacturability. Application Disclaimer Circuit diagrams external to ELMOS Semiconductor AG products are included as a means of illustrating typical applications. Consequently, complete information sufficient for construction purposes is not necessarily given. The information in the application examples has been carefully checked and is believed to be entirely reliable. However, no responsibility is assumed for inaccuracies. Furthermore, such information does not convey to the purchaser of the semiconductor devices described any license under the patent rights of ELMOS Semiconductor AG or others. Contact ELMOS Semiconductor AG Heinrich-Hertz-Straße Dortmund Germany Phone: +49 () Fax.: +49 () info@elmos.de Web: ELMOS Semiconductor AG Specification 3 / 3 3SP359E