Power Management Projects

Transcription

1 Power Management Projects

2 DC-DC Switching Converters

3 DCM SIDO Boost Converter 0.5 µm CMOS n-well Process Switching frequency: 1 MHz Supply voltage: 1.3V 2.8V Output voltages: 3V and 3.3V Ripple Voltages: 35mV and 30mV Inductor: 1µH Filter capacitor: 33µF and 40µF D. Ma, W.H. Ki, C.Y. Tsui, P. Mok, IEEE JSSC, pp , Jan 2003.

4 PCCM SIDO Boost Converter 2.5mm 0.5 µm CMOS n-well Process Switching frequency: 1 MHz Supply voltage: 1.25V 2.25V Output voltages: 2.5V and 3.0V Ripple voltages: 20mV and 25mV Inductor: 1µH Filter capacitor: 33µF and 33µF M 1.7mm D. Ma, W.H. Ki, C.Y. Tsui, IEEE JSSC, pp , June 2003.

5 Current-Mode CMOS DC-DC Converter with On-Chip Current-Sensing 0.6 µm CMOS 3M2P Process Chip area: 2.87 mm 2 Switching freq.: 300k-1MHz Supply voltage: 3.0V 5.26V Output Current: <450mA Efficiency: max. 90% C.F. Lee and P.K.T. Mok, IEEE JSSC, Jan 2004

6 One-Cycle Control Buck Converter 0.5 µm CMOS n-well Process Features: One-cycle control Error-control loops Dynamic loss control Switching frequency:1 MHz Supply voltage: 3.3V Output voltages: 0.9V 2.25V Ripple voltages: 10mV Tracking time +ve: 1V/12.2µs Tracking time ve: 1V/13.8µs D. Ma, W.H. Ki, C.Y. Tsui, IEEE JSSC, pp , Jan 2004.

7 Buck Converter with Digital Controller 2.1u m 0.6 µm CMOS n-well Process 1.8u m NMOS PMOS BUFFE R ERR AmP PID Controller Time Control PW M Count er VC O Testing Circuit Switching freq.: 1 MHz Supply voltage: 3.3V Output voltage: 0.2V 3.0V Ripple voltage: 30mV Inductor: 47µH Filter capacitor: 2.2µF Tracking time: 1V / 50µs Y.K. Chiu, W.H. Ki, C.Y. Tsui, IEEE JSSC, March 2005.

8 An Integrated CMOS Current-Sensing Circuit for Low-Voltage Current-Mode Buck Regulator Power NMOS Buffer Power PMOS 0.6 µm CMOS 3M2P Process Control Circuits Currentsensing circuit Chip area: 2086µm 2336µm Switching freq.: 100kHz Supply voltage: 1V 3.6V Output Current: Efficiency: C.Y. Leung, P.K.T. Mok, K.N. Leung and M. Chan, IEEE TCAS II, to appear.

9 A 1-V Integrated Current-Mode Boost Converter in Standard 3.3/5-V CMOS Technologies 0.6 µm CMOS 3M2P Process Chip area: 2429µm 2042µm Switching freq.: 500kHz Supply voltage: 1V 2V Output Current: Efficiency: >89% C.Y. Leung, P.K.T. Mok and K.N. Leung, IEEE JSSC, to appear.

10 A PWM Buck Converter with End-Point Prediction 0.35 µm CMOS 4M2P Process V O (EPP) Chip area: 1100µm 2000µm Switching freq.: 1MHz Supply voltage: 2.4V Output voltage: 0.3V 2.1V Ripple voltage: 30mV Inductor: 4.7µH Filter capacitor: 10 µf Tracking time: 1V / 100µs V O (conv) V REF S. Man, P.K.T. Mok and K.N. Leung, IEEE TCAS II, to appear.

11 Switched-Capacitor Power Converters (Charge Pumps)

12 Switching Low Dropout Regulator 0.6 µm CMOS Process Switching freq.: 460kHz Supply voltage: 1.8V Output voltage: 3.0V Ripple voltage: 4mV Efficiency: 81% at 100mA W. Chen, W.H. Ki, P. Mok, M.S. Chan, IEEE ISCAS, pp.iii293 III296, May 2001.

13 Area-Efficient 4X Charge Pump 0.8 µm CMOS n-well Process Switching freq.: 33.3kHz Supply voltage: 2.5V Output voltage: 9V Ripple voltage: 10mV Capacitor: 0.47µF T.R. Ying, W.H. Ki, M.S. Chan, IEEE JSSC, pp , Oct 2003.

14 Switched-Capacitor Voltage Doubler with Novel Noise Reduction Technique output noise 0.6 µm CMOS 3M2P Process Supply voltage: 1.5V 2.5V Switching freq.: 500kHz Flying cap.: 1µF(off-chip) Filtering cap.: 2.2µF(off-chip) Output current: Output noise: H. Lee and P.K.T. Mok, IEEE JSSC, May <50mA 12mV (reduced from 30mV of the conventional design)

15 A SC DC-DC Converter with Pseudo-Continuous Output Regulation Output Transient 100mA f s =200kHz 100mA f s =500kHz H. Lee and P.K.T. Mok, IEEE ISSCC, µm CMOS 3M2P Process Supply voltage: 1.5V 3.2V Switching freq.: kHz Flying cap.: 1µF(off-chip) Filtering cap.: 2.2µF(off-chip) Output Current: 150mA Output ripple: <20mV Transient: <25µs Efficiency: Max 90%

16 Low Dropout Regulators

17 An Area-Efficient CMOS LDO for SoC Applications 0.35 µm CMOS 4M2P Process Chip area: 0.125mm 2 Supply voltage: 1.2V 3.3V Supply current: 85µA Output voltage: 1V (adjustable) Settling time: ~10µs S.K. Lau, P.K.T. Mok and K.N. Leung, IEEE JSSC, to appear; U.S. Patent, pending.

18 A Single-Transistor-Control CMOS LDO 0.35 µm CMOS 4M2P Process Chip area: 0.045mm 2 Supply voltage: 1.2V 1.5V Supply current: 95µA Output voltage: 1V (adjustable) Settling time: ~400ns T.Y. Man, C.Y. Leung, P.K.T. Mok, K.N. Leung and M. Chan; US Patent Application No. 60/658,752, filed on March 2005.

19 A CMOS Capacitor-Free LDO Load transient response 0.6 µm CMOS 3M2P Process Chip area: 0.31mm 2 Supply voltage: 1.5V 4.5V Supply current: 38µA Output voltage: 1.3V (adjustable) Settling time: ~2µs K.N. Leung and P.K.T. Mok, IEEE JSSC, Oct 2003; US Patent Number , Aug 2004.

20 Bandgap References

21 A Sub-1-V CMOS Bandgap Voltage Reference TC of Sub-1-V Bandgap Voltage Reference Temp (Degree C) Vs = 0.95V Vs = 0.98V Vs = 1.00V Vs = 1.10V Vs = 1.50V Reference Voltage (mv) 0.6 µm CMOS 3M2P Process Chip area: 0.24mm 2 Supply voltage: 0.98V 1.5V Supply current: 18µA Output voltage: ~0.6V Tempco: 15ppm/ o C K.N. Leung and P.K.T. Mok, IEEE JSSC, April 2002.

22 A Low-Voltage CMOS Voltage Reference Reference voltage (mv) Temperature (degree C) Vs = 1.40 V Vs = 2.00 V Vs = 3.00 V 0.6 µm CMOS 3M2P Process Chip area: 0.055mm 2 Supply voltage: 1.4V 3V Supply current: 9.7µA Output voltage: ~0.3V Tempco: 36.9ppm/ o C K.N. Leung and P.K.T. Mok, IEEE JSSC, Jan 2003; US Patent 6,441,680, Aug 2002.

23 A Low-Tempco CMOS Voltage Reference Vref (V) Temp (degree C) VDD = 1.80 V VDD = 2.00 V VDD = 3.00 V VDD = 4.00 V 0.6 µm CMOS 3M2P Process Chip area: 0.057mm 2 Supply voltage: 2V 4V Supply current: 23µA Output voltage: ~1.14V Tempco: 5.3ppm/ o C K.N. Leung and P.K.T. Mok, IEEE JSSC, March 2003.

24 Power Management Units

25 Ultra-Low Voltage Power Management and Charge-Based Computation 0.35 µm CMOS 4M2P Process PMU: 2900µ x 3300µ FIR filter: 930µ x 400µ Controller: 150µ x 290µ Supply voltage: 80mV 200mV Output voltage: 1.1V 2.3V Switching freq.: 100k 2M Hz Filter capacitor: 0.47µF Iout(max): 200µA C.Y Tsui, H. Shao, W.H. Ki and F. Su, VLSI Symposium, June 2005.